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  • 1
    Electronic Resource
    Electronic Resource
    Early stages of interface-trap transformation in metal-SiO2-(100)Si structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2520-2522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface traps and oxide charge generated by x ray and high-field Fowler–Nordheim (FN) injection are monitored within the first hour after their creation. A characteristic interface-trap peak distribution in the upper half of the Si band gap (∼Ev+0.75 eV) is invariably found immediately after x-ray irradiation or gate-positive FN injection. However, this peak distribution is not observed immediately after gate-negative FN injection; instead, it gradually develops with time after the injection, and is accompanied by a gradual reduction of the positive oxide charge density. In contrast, the interface-trap distribution after x ray or gate-positive FN injection undergoes much less notable changes within the first hour. In addition, the amount of damage measured immediately after FN injection depends strongly on the injection polarity, with gate-positive injection generating more interface traps and less positive charge while the reverse is true for gate-negative injection. These observations may be explained in terms of the differences in the initial trapped hole distribution and subsequent electron-hole interactions under different damage conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346471
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  • 2
    Electronic Resource
    Electronic Resource
    Energy shift of (100)Si/SiO2 interface traps resulting from avalanche hole injection (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1058-1060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of avalanche injected holes on Si/SiO2 interface traps is reported. The major effect of avalanche hole injection is to shift the energy distribution of the interface traps (Dit) toward the conduction-band edge. In addition, in x-ray irradiated samples where a double-peak Dit distribution had been formed, the energy distance between the two peaks decreases with increasing injected hole fluence. When the trapped holes are neutralized by electron injection, however, the Dit distribution recovers to its initial energy position prior to avalanche hole injection. If we assume the interface traps correspond to the Pb centers in the electron spin resonance literature, then the energy shift of Dit due to avalanche injected holes may arise from the local structural change of the Pb dangling bond defect−a shift toward conduction band is consistent with a more planar configuration of the tetrahedral structure of the Si dangling bond defect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350399
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  • 3
    Electronic Resource
    Electronic Resource
    Time evolution of capture cross sections of radiation-induced Si/SiO2 interface traps studied by single-frequency ac conductance technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 860-866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the time-dependent evolution of the capture cross sections of interface traps in metal/SiO2/Si capacitors after they are created by x-ray irradiation. A single-frequency ac conductance technique was used in this study. The capture cross section decreases significantly right after irradiation, and gradually recovers over a time scale similar to that of the interface-trap transformation process reported previously [T. P. Ma, Semicond. Sci. Technol. 4, 1061 (1989)]. The x-ray dose dependence and the effect of PMA (post-metal anneal) will also be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349649
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  • 4
    Electronic Resource
    Electronic Resource
    Time-dependent changes of parasitic effects induced by high-field electron injection in metal-oxide-semiconductor transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 528-530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The subthreshold characteristics of n-channel metal-oxide-semiconductor field effect transistors after high-field, high current density (100 mA/cm2) Fowler–Nordheim electron injection are investigated. Rapid changes are observed and recorded within 1000 s after injection. A "bump'' in the subthreshold I-V characteristic appears if electron trapping in the gate oxide dominates. This bump can be made to disappear and reappear by controlling the amount of trapped electrons in the oxide. This may be readily explained by the parasitic channel leakage current along the isolation field oxide edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347700
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  • 5
    Electronic Resource
    Electronic Resource
    A charge pumping method for rapid determination of interface-trap parameters in metal-oxide-semiconductor devices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3188-3190 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a new implementation of charge pumping for rapid characterization of interface-trap parameters, especially geometric mean of electron and hole capture cross sections, in metal-oxide-semiconductor field-effect transistors (MOSFETs). With the help of an HP8116A (or equivalent) function generator operated in the voltage-controlled-oscillator mode, this method enables measurement of the charge pumping current as a function of frequency with one continuous sweep of the frequency. Data analysis can be performed on an HP4145B (or equivalent) parameter analyzer by defining user functions. The measurement setup can be readily assembled with standard instruments without the need of a computer. It allows fast measurements without compromising the accuracy. The improved measurement speed has led to new observations revealing the rapid change of the capture cross sections of the interface traps shortly after Fowler–Nordheim hot-carrier injection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142575
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  • 6
    Electronic Resource
    Electronic Resource
    Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3403-3409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Open-volume defects introduced in Si(100) crystals during fluorine implantation were investigated by variable-energy positron beam depth profiling. The behavior of the implantation-induced lattice defects upon high temperature annealing and their role in the surface-oriented diffusion of F impurities were examined. The defects become mobile and undergo recovery at temperatures below 550 °C, i.e., well before the onset of fluorine diffusion as seen by secondary ion mass spectroscopy (SIMS) profiling. This behavior suggests that after irradiation and annealing the fluorine occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two-step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by a rapid diffusion of the interstitial F and the vacancy through the crystal to the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357470
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  • 7
    Electronic Resource
    Electronic Resource
    Interface traps in jet-vapor-deposited silicon nitride–silicon capacitors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8507-8511 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of interface traps in metal–silicon nitride (deposited by jet vapor deposition technique) –silicon (MNS) capacitors have been studied in some detail. In comparison with those in metal–oxide–Si capacitors, the interface traps in our MNS capacitors exhibit the following major differences: (i) ∼2 orders of magnitude higher time constants; (ii) no evidence of two distinguishable defects following irradiation as revealed by the ac conductance measurement; and (iii) absence of latent generation of interface traps following irradiation. On the other hand, the interface-trap transformation process following irradiation is qualitatively similar in silicon nitride and thermal oxide devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362529
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  • 8
    Electronic Resource
    Electronic Resource
    SrBi2Ta2O9 memory capacitor on Si with a silicon nitride buffer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1185-1186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have made ferroelectric memory capacitors by depositing a SrBi2Ta2O9 thin film on a Si substrate separated by an ultrathin buffer layer of silicon nitride film. The hysteresis in the capacitance–voltage curves suggests a sizable memory window of 2 V with a programming voltage swing of ±7 V. The switching time is estimated to be on the order of nanosecond based on the results of a one-shot pulse experiment. The results from the fatigue test indicate a slight degradation of the memory window after 1011 switching cycles. These properties are encouraging for the development of ferroelectric memory transistors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121008
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  • 9
    Electronic Resource
    Electronic Resource
    ac conductance measurements on radiation-damaged (100) Si/SiO2 interface after defect transformation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1778-1780 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental results of multifrequency ac conductance measurements on radiation-damaged (100) Si-SiO2 interface after the interfacial defect transformation process has taken place. Previous quasi-static capacitance-voltage measurements on such samples have identified two distinct interface trap peaks, one above midgap and the other below midgap. The presence of such a double-peak interface trap distribution has been confirmed by our ac conductance measurements, and excellent quantitative agreement with the capacitance measurements has been achieved. In addition, the ac conductance measurements showed a strong energy dependence of the capture cross sections of interface traps for both electrons (in the upper half of the band gap) and holes (in the lower half of the band gap). The capture cross sections vary systematically by more than an order of magnitude in an energy range of about 200 meV in either half of the band gap, suggesting that there may be a broad distribution of different defect configurations and/or their surrounding environments at the interface after radiation damage. The energy dispersion of the interface trap time constants and surface potential fluctuations are also obtained and used for accurate extraction of the interface trap density from these data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104064
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  • 10
    Electronic Resource
    Electronic Resource
    Interface-trap transformation at radiation-damaged (111)Si/SiO2 interface (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2339-2341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents the results of our recent study on the post-irradiation behavior of the interface trap distribution in metal-SiO2-Si capacitors made on Si substrates of (111) orientation. It will be shown that the interface trap distribution in these (111) samples measured immediately after x-ray irradiation is qualitatively similar to what was observed in the (100) counterpart: a prominent peak appears in the upper half of the Si band gap (Ev+0.75 eV). Subsequent time-dependent evolution behavior of this peak, however, is distinctly different for samples with the two different orientations. While in (100) samples a second peak in the lower half of the band gap would develop over time, resulting in a double-peak interface trap distribution [see, for example, E. F. da Silva, Y. Nishioka, and T.-P. Ma, Appl. Phys. Lett. 51, 270 (1987)], the most salient feature observed in (111) samples is the gradual shift of the peak position with time toward the lower half of the Si band gap, and eventually a single peak will reside below midgap. The movement of this peak has been found to be thermally accelerated, with an apparent activation energy of about 0.4±0.1 eV. It has also been found that the gate-induced compressive strain at the Si/SiO2 interface plays an important role in the peak movement. In addition, the presence of a gate bias and its polarity also significantly affect the post-irradiation behavior of the interface trap distribution. The results may be explained in terms of the atomic relaxation of the bonding defect at the (111)Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101522
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