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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3306-3309 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron-silicide has been formed by ion implantation of iron into silicon (111). In the as-implanted sample, a new type of orthorhombic FeSi2 phase was found. Although the lattice parameters of the new phase are the same as those of the known semiconductor β-FeSi2, its point group and space group were different and determined to be mmm and Pbca, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8507-8511 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of interface traps in metal–silicon nitride (deposited by jet vapor deposition technique) –silicon (MNS) capacitors have been studied in some detail. In comparison with those in metal–oxide–Si capacitors, the interface traps in our MNS capacitors exhibit the following major differences: (i) ∼2 orders of magnitude higher time constants; (ii) no evidence of two distinguishable defects following irradiation as revealed by the ac conductance measurement; and (iii) absence of latent generation of interface traps following irradiation. On the other hand, the interface-trap transformation process following irradiation is qualitatively similar in silicon nitride and thermal oxide devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3403-3409 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Open-volume defects introduced in Si(100) crystals during fluorine implantation were investigated by variable-energy positron beam depth profiling. The behavior of the implantation-induced lattice defects upon high temperature annealing and their role in the surface-oriented diffusion of F impurities were examined. The defects become mobile and undergo recovery at temperatures below 550 °C, i.e., well before the onset of fluorine diffusion as seen by secondary ion mass spectroscopy (SIMS) profiling. This behavior suggests that after irradiation and annealing the fluorine occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two-step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by a rapid diffusion of the interstitial F and the vacancy through the crystal to the surface.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiation hardness of fluorinated SiO2/Si interface in metal-oxide-semiconductor field-effect transistors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine was introduced by low-energy F implantation onto the surface of the polycrystalline silicon gate electrode, followed by annealing at 950 °C to diffuse F into the gate SiO2 toward the SiO2/Si interface. The improved radiation hardness is attributed to the strain relaxation near the SiO2/Si interface by fluorine incorporation.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3881-3889 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The potential distribution is calculated for a generalized metal-oxide-silicon capacitor using the Schwartz–Christoffel transformation. The results are used to calculate the high-field tunneling current in such a device, with particular attention to the field enhancement effect of the edge of the gate electrode. It is found that the total current through even a large-scale device can be dominated by the perimeter component. The dependence of the field enhancement on several device parameters is examined theoretically. In particular, thick oxides and thin, steep gate electrodes augment the field enhancement.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3188-3190 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a new implementation of charge pumping for rapid characterization of interface-trap parameters, especially geometric mean of electron and hole capture cross sections, in metal-oxide-semiconductor field-effect transistors (MOSFETs). With the help of an HP8116A (or equivalent) function generator operated in the voltage-controlled-oscillator mode, this method enables measurement of the charge pumping current as a function of frequency with one continuous sweep of the frequency. Data analysis can be performed on an HP4145B (or equivalent) parameter analyzer by defining user functions. The measurement setup can be readily assembled with standard instruments without the need of a computer. It allows fast measurements without compromising the accuracy. The improved measurement speed has led to new observations revealing the rapid change of the capture cross sections of the interface traps shortly after Fowler–Nordheim hot-carrier injection.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1728-1733 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-intensity pulsed ion source of TEMP-type series, operating in bipolar mode, has been developed as a unique pulsed energy source to produce a high-intensity pulsed ion beam (HIPIB) for surface modification of materials. To generate the ion beam, a specially shaped bipolar pulse, consisting of a first negative pulse and a second delayed positive pulse both of nanosecond width, is formed by a double coaxial pulse-forming line (PFL) powered with a Marx generator and supplied to a magnetically insulated ion diode (MID) by a self-magnetic field. It is found that the efficient generation of a HIPIB is mainly dependent on the delay time of the bipolar pulse, adjusted by pressure ratio in the two gas switches of a PFL, and the anode–cathode (A–K) gap distance in the self-magnetic field MID. The delay time determines the effective area on the anode surface for plasma generation and the A–K gap distance ensures the stability of the process. A proper delay time and a proper A–K gap distance are obtained by a series of experimental investigations. Under delay time from 30 to 280 ns and several different A–K gap distances, the typical wave forms of the bipolar pulses at a dc charging voltage of 45 kV to Marx generator are illustrated to clarify the effects of delay time and A–K gap distance on the ion beam generation. The proper A–K gap distance is not uniform, varied from 6 to 8 mm, and the corresponding proper delay time is 250 ns. The most efficient plasma generation leads to a maximum output of HIPIB with a peak ion current density of 350 A cm−2 and a beam pulse width of 75 ns (full width at half maximum), at an accelerating pulse of 220 kV with a pulse width of 100 ns. © 2002 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3556-3558 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence emission from indium-tin-oxide (ITO) and indium oxide films incorporated in a Si-rich SiO2-SiO2-ITO (In2O3) multiple-layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3317-3319 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The post-irradiation evolution of the interface traps in metal/SiO2/Si (MOS) capacitors after repeated x-ray irradiation has been investigated. The results indicate that, immediately after the first irradiation, a characteristic peak (peak-1) in the energy distribution of the interface traps above midgap appears, which subsequently decreases with time in storage at 75 °C. Accompanying this decrease is the formation and growth of a second peak (peak-2) below midgap. Evidence will be presented which suggests that this is due to an interfacial defect transformation process. Measurements done after repeated irradiation-storage cycles indicate that peak-2 is not generated directly by the x-ray irradiation; rather, the existence of peak-1 is a necessary condition for the formation of peak-2 through the defect transformation process. There is also evidence that only a portion (although a significant portion) of peak-1 defect undergoes the transformation process.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 931-938 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the electron trapping during Fowler–Nordheim tunneling in metal-oxide-semiconductor capacitors is a function of the gate-induced strain. The trapping probability is modulated by the strain induced by the gate electrode. A larger induced compressive strain results in a smaller probability of trapping. A silicon-rich silicon-dioxide injector stack was utilized to obtain spatially uniform injection under both positive and negative gate bias. Devices without the injector exhibited perimeter-dominated current under negative gate bias because of the field enhancement near the edges. The electron trapping dependence on the gate-induced strain is invoked to explain the sublinear dependence of the perimeter-related current. It is shown that only traps of capture cross section greater than 10−18 cm2 are affected by this strain, apparently by modulating the capture cross section.
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