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Investigation of organometallic vapor phase epitaxy of InAs and InAsBi at temperatures as low as 275 °C (1991)

Ma, K. Y. ; Fang, Z. M. ; Cohen, R. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 3940-3942

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: InAs and InAsBi have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) over a broad temperature range from 600 to as low as 275 °C. This is the lowest growth temperature ever reported for standard OMVPE. It is demonstrated that lowering the growth temperature is the most effective approach for increasing the Bi content in InAsBi alloys. For example, InAsBi samples with Bi concentrations as high as 6.1 at.% have been successfully grown at a temperature of 275 °C. Trimethylindium, arsine, and trimethylbismuth were used as precursors for most experiments. The growth efficiency is a constant for temperatures above 400 °C, indicating the growth rate is diffusion limited in this temperature regime. For lower temperatures, it decreases exponentially with decreasing temperature with an activation energy of 24 kcal/mol. Incomplete pyrolysis of TMIn limits the growth rate in this temperature regime. However, by substituting ethyldimethylindium for TMIn the diffusion controlled regime can be extended to lower temperatures. Hall effect measurements show that the n-type background concentration increases from approximately 2.3×1016 to 1019 cm−3 as the growth temperature decreases from 600 to 325 °C. Secondary-ion mass spectroscopy results show that the dominant impurity is carbon. Thus, carbon is mainly a donor in these materials.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349204

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Organometallic vapor-phase epitaxy growth and characterization of Bi-containing III/V alloys (1990)

Ma, K. Y. ; Fang, Z. M. ; Cohen, R. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 4586-4591

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: For potential infrared detector applications, single-crystalline InAsBi and InAsSbBi have been grown by atmospheric pressure organometallic vapor-phase epitaxy. The precursors used were trimethylindium, trimethylantimony, trimethylbismuth, and arsine at growth temperatures of 375 and 400 °C. Good quality epilayers with smooth surface morphologies were obtained by properly controlling the key growth parameter, the V/III ratio. The variation of lattice constant with solid composition for the InAs1−xBix system, a=6.058+0.966x, provides evidence that Bi atoms indeed incorporate substitutionally into the As sites of the sublattice in the InAs zinc-blende structure. An extrapolated lattice parameter for the hypothetical zinc-blende InBi is 7.024 A(ring). Thermodynamic calculations of the InAs-InBi and InSb-InBi pseudobinary phase diagrams were carried out using the delta-lattice-parameter model using the lattice constant for zinc-blende InBi of 7.024 A(ring). The results agree well with experimental data. The calculations predict that the solid solubility limit of Bi in InAs is less than 0.025 at. %. The calculated maximum solubility limit is 2.1 at. % for Bi in InSb at the eutectic temperature of 132 °C. Thus, tremendously large miscibility gaps exist in both alloy systems. The critical temperature was predicted to be 2569 °C for the InAs-InBi system and 496 °C for the InSb-InBi system. The miscibility gap is the major factor limiting Bi incorporation into the InAsSb alloys. Nevertheless, metastable InAsBi and InAsSbBi alloys were grown with concentrations far exceeding the solubility limit. For example 3.1 at. % Bi was incorporated into InAs. Infrared photoluminescence measurements show a decrease of peak energy with increasing Bi concentration in the alloys, with dEg/dx=−55 meV/at. %Bi.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.346166

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Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy (1990)

Fang, Z. M. ; Ma, K. Y. ; Cohen, R. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 1187-1191

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Infrared photoluminescence (PL) from InAsBi and InAsSbBi epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been studied. The PL from ternary InAsBi was investigated for Bi concentrations of ≤2.3 at. %. The peak energy decreases at a rate of 55 meV/at. % Bi with increasing Bi concentration. A study of the transmission spectra of these Bi-containing alloys confirms the above result. The PL peak is assigned to near band edge emission for InAsBi. The value of dEg/dx=−55-meV/at. % Bi is more than double the previously reported theoretical prediction for the band gap of InAsBi. The PL for the quaternary layer of InAsSbBi is also studied for Sb concentrations of 〈10 at. % and Bi concentrations of ≤1.5 at. %. Bi incorporation in InAs1−xSbx(0.07〈x〈0.10) reduces the PL peak energy at a rate of 46-meV/at. % Bi. These results imply that incorporation of only a few percent of Bi is required in InAs0.35Sb0.65 to achieve a band gap of 0.1 eV, equivalent to a wavelength of 12 μm, desired for infrared detector applications.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.346715

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Raman scattering in InAs1−xSbx grown by organometallic vapor phase epitaxy (1988)

Cherng, Y. T. ; Ma, K. Y. ; Stringfellow, G. B.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 886-887

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The first investigation of the lattice dynamics of the ternary alloy InAs1−xSbx has been made using Raman scattering. The InAs1−xSbx epilayers were grown by organometallic vapor phase epitaxy on (100) InAs and InSb substrates over the entire composition range. The spectra in the optical phonon frequency range show only one set of longitudinal- and transverse-optical (LO,TO) modes, which vary continuously with composition for x≤0.6, and two sets of LO modes for x〉0.6. Both disorder-activated acoustic and optical phonon modes also appear.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100104

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5

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Long-range order in InAsSb (1989)

Jen, H. R. ; Ma, K. Y. ; Stringfellow, G. B.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 1154-1156

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: For the first time, {111} ordering (CuPt type) has been observed in InAs1−xSbx alloys in a wide compositional range from x=0.22 to 0.88. The order-induced spots show the highest intensity for x≈0.5 samples and the lowest intensity toward each binary end compound. Only two of the four variants are formed during growth. In some areas the degree of order for these two variants is equal, and in other areas one variant dominates.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100746

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Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi (1989)

Ma, K. Y. ; Fang, Z. M. ; Jaw, D. H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 2420-2422

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: InAs1−xBix with x≤0.026 and InAs1−x−ySbyBix with x≤0.017 and y≤0.096 have been successfully grown on InAs (100) oriented substrates by atmospheric pressure organometallic vapor phase epitaxy using the precursors trimethylindium, trimethylbismuth, trimethylantimony, and arsine. Good surface morphologies for both InAsBi and InAsSbBi epitaxial layers were obtained at a growth temperature of 400 °C. A key growth parameter is the V/III ratio. Only a very narrow range near 4 (considering the incomplete pyrolysis of AsH3) yields smooth InAsBi epilayers. Typical growth rates were 0.02 μm/min. X-ray diffractometer scans show clearly resolved Kα1 and Kα2 peaks for the layer of InAs0.889Sb0.096Bi0.015 grown on an InAs substrate with a graded transition layer to accommodate the lattice parameter difference. The half widths of the peaks are comparable to those of the substrate. For the first time, photoluminescence (PL) at 10 K from these Bi-containing alloys has been measured. The PL peak energy is seen to decrease with increasing Bi concentration at a rate of 55 meV/at. % Bi. InAsSbBi is a potential material for infrared detectors operating in the wavelength range from 8 to 12 μm.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102033

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7

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Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy (1991)

Fang, Z. M. ; Ma, K. Y. ; Cohen, R. M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 1446-1448

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Infrared photoluminescence (PL) from InAs epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) has been studied as a function of the growth temperature (350–600 °C). It is shown that the PL spectra depend strongly on the growth temperature. The integrated PL intensity decreases by about two orders of magnitude as the growth temperature decreases from 500 to 350 °C. In addition, Hall-effect measurements show that the n-type impurity concentration in InAs increases rapidly as the growth temperature decreases. The results of secondary-ion mass spectroscopy show that the dominant impurity is carbon and its concentration varies with the growth temperature in a similar way to the electron concentration. This confirms that carbon is a donor in InAs. The decreasing PL intensity with decreasing growth temperature is attributed to the increasing carbon concentration.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105283

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8

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Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy (1990)

Fang, Z. M. ; Ma, K. Y. ; Jaw, D. H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 7034-7039

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x〈0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range. The values of full width at half maximum of the PL peaks show that the epitaxial layer quality is comparable to that grown by molecular-beam epitaxy. The observed small peak shift with temperature for most InAs1−xSbx epilayers may be explained by wave-vector-nonconserving transitions involved in the PL emission. For comparison, PL spectra from InSb/InSb and InAs/InAs show that the wave-vector-conserving mechanism is responsible for the PL emission. The temperature dependence of the energy band gaps, Eg, in InSb and InAs is shown to follow Varshni's equation Eg(T)=Eg0−αT2/ (T+β). The empirical constants are calculated to be Eg0=235 meV, α=0.270 meV/K, and β=106 K for InSb and Eg0=415 meV, α=0.276 meV/K, and β=83 K for InAs.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345050

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