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  • 1
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2420-2422 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs1−xBix with x≤0.026 and InAs1−x−ySbyBix with x≤0.017 and y≤0.096 have been successfully grown on InAs (100) oriented substrates by atmospheric pressure organometallic vapor phase epitaxy using the precursors trimethylindium, trimethylbismuth, trimethylantimony, and arsine. Good surface morphologies for both InAsBi and InAsSbBi epitaxial layers were obtained at a growth temperature of 400 °C. A key growth parameter is the V/III ratio. Only a very narrow range near 4 (considering the incomplete pyrolysis of AsH3) yields smooth InAsBi epilayers. Typical growth rates were 0.02 μm/min. X-ray diffractometer scans show clearly resolved Kα1 and Kα2 peaks for the layer of InAs0.889Sb0.096Bi0.015 grown on an InAs substrate with a graded transition layer to accommodate the lattice parameter difference. The half widths of the peaks are comparable to those of the substrate. For the first time, photoluminescence (PL) at 10 K from these Bi-containing alloys has been measured. The PL peak energy is seen to decrease with increasing Bi concentration at a rate of 55 meV/at. % Bi. InAsSbBi is a potential material for infrared detectors operating in the wavelength range from 8 to 12 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102033
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  • 2
    Electronic Resource
    Electronic Resource
    Long wavelength lattice dynamics for quaternary alloys: GaInPSb and AlGaAsSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4265-4268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long wavelength lattice dynamics of the quaternary alloys Ga1−xInxP1−ySby and AlxGa1−xAsySb1−y have been investigated. The optical phonons show a four mode behavior in Ga1−xInxP1−ySby and a three mode behavior in AlxGa1−xAsySb1−y over the composition ranges investigated. An average random cell model is used to describe the behavior of the optical phonons of both systems. The calculations of the dependence of the long wavelength optical phonon frequencies on solid composition are in good agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352214
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic ordering in GaAsP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4263-4272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuPt type ordering, which consists of a monolayer compositional modulation along one of the 4 〈111〉 directions in the lattice, was studied using transmission electron microscopy for GaAs1−xPx with values of x extending from 0.25 to 0.85. The samples were grown by organometallic vapor phase epitaxy on nominal (001) GaAs substrates that were misoriented by varying amounts in three directions. No CuPt type ordering was observed for GaAs1−xPx with x ≤0.35, while ordering was found to occur for 0.4≤x≤0.85. The direction of substrate misorientation has a major effect on the determination of which of the four possible CuPt variants are formed for 0.4≤x≤0.85. Two variants, with ordering on the (1¯11) and (11¯1) planes, appear for epilayers grown on substrates oriented exactly on the (001) plane and for substrates misoriented by 6° towards the [110] direction. Only one variant, with ordering on the (1¯11) plane, appears for epilayers grown on substrates misoriented by 6° towards [1¯10]. These ordering-induced spots observed in transmission electron diffraction (TED) patterns for GaAsP occur only for the [110] cross section. From TED studies of GaInP grown on similar substrates, we conclude that the CuPt variants in GaAsP are exactly the same as for GaInP. Further evidence supporting this conclusion was obtained by growing first a layer of GaInP followed by a layer of GaAsP. High-resolution dark field electron micrographs show domains of the same variants in both layers. A mechanism describing the formation of the specific ordered variant for both GaAsP and GaInP is proposed. From studies of ordering in a strain-layer superlattice, the strain due to lattice mismatch was found to play no significant role in the propagation of ordered domains. Microtwins, also generated due to lattice mismatch, can act as domain boundaries and prevent the propagation of the ordered domains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348398
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  • 4
    Electronic Resource
    Electronic Resource
    Long-wavelength lattice dynamics of GaxIn1−xAsySb1−y quaternary alloys (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1965-1969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quaternary semiconductor alloy GaxIn1−xAsySb1−y has been investigated using Raman scattering spectroscopy in the spectral region from 150 to 300 cm−1 at room temperature. The Raman spectra exhibit two- or three-mode behavior depending on the composition. A modified random-element isodisplacement model is used to describe the behavior of the optical phonons. The calculations of the dependence of the long-wavelength optical phonon frequencies on the composition are in good agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344333
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  • 5
    Electronic Resource
    Electronic Resource
    Optical absorption and emission of GaP1−xSbx alloys (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 760-767 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first detailed optical investigation of the metastable III/V semiconductor alloy GaP1−xSbx is presented. Epilayers are grown by atmospheric pressure organometallic vapor phase epitaxy throughout the entire compositional range on GaP, GaAs, and GaSb substrates. The approximately 1-μm-thick layers are partially strained with values of lattice mismatch as large as 1.7×10−2. Values of band gap are determined for the first time from absorption spectra measured at 10 and 300 K and corrected for strain-induced energy shifts. The resultant values of bowing parameter for the direct and indirect band gaps are cΓ=3.11±0.18 eV and cx =2.06±0.18 eV, independent of temperature, yielding a value of direct/indirect crossover composition, xc, of 0.32±0.07. Single photoluminescence (PL) peaks are observed between 10 and 300 K for all samples. For samples with 0.37≤x≤0.47, they are assigned to recombination of carriers localized in bandtail states induced by compositional fluctuations. The stretch of the tails into the gap is greatly enhanced over the random alloy limit by the metastability of the Ga1−xSbx alloys. PL peaks for samples with x≤0.32 are assigned to recombination via deep centers in the gap. The PL peak of a sample with x=0.91 is assigned to recombination involving shallow acceptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346781
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  • 6
    Electronic Resource
    Electronic Resource
    Lattice vibration spectra of GaP1−xSbx and InP1−xSbx (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3285-3288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering spectra of ternary semiconductor alloys GaP1−xSbx and InP1−xSbx have been investigated in the spectral region from 150 to 450 cm−1 at room temperature. The optical phonons of both GaP1−xSbx and InP1−xSbx exhibit "two-mode'' behavior over the whole composition range. A random element isodisplacement model is used to describe the behavior of the optical phonons of both alloy systems. The calculations of the dependence of the long-wavelength optical phonon frequencies on the composition are in good agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342688
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering in AlxGa1−xAsySb1−y quaternary alloys (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2552-2554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman scattering of AlGaAsSb quaternary alloy semiconductors has been investigated for the first time. The AlGaAsSb quaternary alloys, including the AlGaSb ternary alloys, were grown by organometallic vapor phase epitaxy. The dependence of the long-wavelength longitudinal-optical phonon frequencies on the composition are reported. The first-order Raman spectra show a two-mode behavior for the AlGaSb ternary alloys and a three-mode behavior for the AlGaAsSb quaternary alloys. For AlGaAsSb, two peaks located below 300 cm−1 are assigned as the GaAs- and GaSb-like LO modes. Two peaks observed above 300 cm−1 are assigned as the "AlAs plus AlSb'' LO and TO modes. A broad peak observed below 200 cm−1 is assigned as a disorder-activated acoustic phonon mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348697
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  • 8
    Electronic Resource
    Electronic Resource
    Optical properties of Ga1−xInxP1−ySby alloys grown by organometallic vapor phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3538-3543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The new family of GaInPSb quaternary alloys grown by organometallic vapor phase epitaxy was characterized by photoluminescence, transmission, photoluminescence excitation, and Raman spectroscopies. Transmission and photoluminescence excitation spectroscopic techniques were applied to determine the energy band gap of the alloys. It was found that the values of band gap obtained for the GaInPSb alloys were close to the theoretical values deduced from the data obtained for the end ternary alloys. The photoluminescence peak energies for all the samples were found to be about 80 to 150 meV below the band gap deduced from the transmission measurements. The large difference between the photoluminescence peak energy and band gap, together with other evidence, suggests that the photoluminescence is from recombination involving a deep center. The long wavelength lattice dynamics of the alloys were studied by Raman spectroscopy in the wave-number range from 150 to 400 cm−1. The long wavelength optical phonons displayed a "three- and four-mode'' behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346313
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7034-7039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x〈0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range. The values of full width at half maximum of the PL peaks show that the epitaxial layer quality is comparable to that grown by molecular-beam epitaxy. The observed small peak shift with temperature for most InAs1−xSbx epilayers may be explained by wave-vector-nonconserving transitions involved in the PL emission. For comparison, PL spectra from InSb/InSb and InAs/InAs show that the wave-vector-conserving mechanism is responsible for the PL emission. The temperature dependence of the energy band gaps, Eg, in InSb and InAs is shown to follow Varshni's equation Eg(T)=Eg0−αT2/ (T+β). The empirical constants are calculated to be Eg0=235 meV, α=0.270 meV/K, and β=106 K for InSb and Eg0=415 meV, α=0.276 meV/K, and β=83 K for InAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345050
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic ordering in InAs0.5P0.5 grown by organometallic vapor phase epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 114-116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsP epilayers grown by organometallic vapor phase epitaxy have been investigated using transmission electron microscopy. Electron diffraction studies using 〈110〉 cross sections indicate the formation of CuPt-like ordering on the group V sublattice. Only two of the four possible ordered variants are observed for epilayers grown on the exactly (001) oriented InP substrates. All the order-induced diffraction spots for InAsP are found to occur on the [110] cross section. Thus, the variants found in InAsP are 1/2(1¯11) and 1/2(11¯1), exactly the same as those found in GaInP, an alloy with CuPt ordering on the group III sublattice. This result is in agreement with recent studies on GaAsP and is contradictory to expectations based on the bond-length model proposed previously for GaInP alloys. The direction of substrate misorientation has a strong effect on the formation of ordered structures for normally (001) oriented InP substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105563
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