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  • 1
    Publication Date: 2019-11-04
    Description: A precursory seismic quiescence lasting 1.5 ± 0.5 years was observed prior to the 1987 M 6.7 Chiba-toho-oki earthquake, Central Japan. This event was the largest mainshock to occur in the region in 60 years. A quantitative analysis of the seismicity rates, using two independent catalogs provided by the NIED and JMA networks, shows that the precursory seismic quiescence is centered in the shallower part of the rupture zone of the subsequent mainshock, at a depth of 20-40 km. At the hypocenter of the 1987 Chiba-toho-oki mainshock, a 50% increase in the seismicity rate was detected in the NIED data, coinciding in time with the onset of quiescence (1986.4 ± 0.5). The simultaneous appearance of both quiescence in the shallow part of the rupture zone observed in two catalogs, and a rate increase in the immediate hypocenter region, suggest that these phenomena are causally linked to the subsequent mainshock. However, a quantitative analysis of both catalogs reveals that the precursory quiescence and rate increase are not unique, since rate changes of this duration and significance often occur in the data. A rate change of this significance rating could probably not be detected as a precursor in a real time approach. For the aid of real time monitoring of seismicity rate changes, we introduce the method to calculate the 95-percentile of confidence level for the significant rate changes.
    Description: JCR Journal
    Description: open
    Keywords: quiescence ; seismicity rate increasa ; quantitative analysis ; significance test ; the 1987 Chiba-toho-oki earthquake ; 04. Solid Earth::04.06. Seismology::04.06.02. Earthquake interactions and probability
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
    Format: 5959429 bytes
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  • 2
    Publication Date: 2019-11-04
    Description: We investigate some characteristics of foreshock activity of moderate and large earthquakes which occurred in the present century in Albania and the surrounding area. Using a prediction algorithm, based on possible foreshocks, we obtained a probabilistic relation between possible foreshocks and mainshocks. From documentary and instrumental data for the period 1901-1994 for the area between 39.0°- 43.0°N and 18.5°-21.5°E we evaluated the probability of the occurrence of mainshocks immediately after their possible foreshocks. The result shows that the probability that mainshocks with magnitude M ³ 6.0 are preceded by a foreshock with magnitude M ³ 4.4, distance £ about 50 km and time £ 10 days is 38% (6/16). The probability that one earthquake with M ³ 4.4 will be followed by a larger earthquake with M ³ 6.0 within about 50 km and 10 days is 1.3% (6/468), but the probability increases to 33% (1/3) if 7 earthquakes with M ³ 4.4 occur within about 50 km and 10 days. From instrumental data for the period 1971-1994, the probability that mainshocks with M ³ 5.0 are preceded by a foreshock with magnitude M ³ 4.0 is 33% (5/15). The probability that one earthquake with M ³ 4.0 will be followed by a larger earthquake with M ³ 5.0 within about 50 km and 10 days is 1.9% (5/262), but the probability increase to 5.6% (1/18) if 3 earthquakes with M ³ 4.0 occur within about 50 km and 10 days. We also found a regional variation of foreshock activity with activity decreasing from the Vlora-Elbasani-Dibra transversal seismic belt to the Ionian-Adriatic seismic zone to the interior part of Albania seismic zone.
    Description: JCR Journal
    Description: open
    Keywords: Probability estimation of foreshock activity ; 04. Solid Earth::04.06. Seismology::04.06.02. Earthquake interactions and probability
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
    Format: 3146826 bytes
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2408-2413 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoelectric photoacoustic (PA) measurements on liquid-encapsulated-Czochralski-grown n-GaAs were carried out at room temperature. A continuous broad band below 1.35 eV and a peak at 1.383 eV were observed in the PA amplitude spectra. By comparing with the optical-absorption spectra, it is concluded that the broad band is due to the electron transition involving the EL2 deep-lying defect levels. For the observed peak at 1.383 eV, the origin is considered to be dislocation related. The possibility that this peak is an apparent one expected from the proposed models for the PA signal generation is denied.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On warming the previously white light illuminated yttrium iron garnet with some deficiency of oxygen with a white light, an imaginary part of permeability μ‘ below 10 kHz has been found to show the triple peaks as a function of temperature, the activation energies of which are 0.095–0.22, 0.50, and 0.81 eV, respectively. Furthermore, the height of each peak depends strongly on the illuminating time of exciting light. These features have been discussed and interpreted based on a modified "two-center'' model.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 84 (1962), S. 1303-1305 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6321-6321 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After illuminating a single crystal of yttrium iron garnet grown by a modified floating zone method at 77 K, the complex permeability was measured from 77 to 300 K under low alternating field. As well as the decreasing of permeability and the appearance of a peak in μ‘-T curve, disaccommodation (DA) or the change of permeability with time was found to be induced around 140 and 210 K. As the result of the superposition of disaccommodation, the peak in the μ‘-T curve is observed to be divided. These photoinduced magnetic effects cannot be attributed to a single origin, for only photoinduced DA disappears in the process of warming. The origins are discussed and a model is proposed, taking account of the mobility of oxygen vacancy depending on the charge state and the photoexcited electron.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1889-1891 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temporal decay characteristics of dislocation-related luminescence bands (D1–D4) were explored in strain-relieved epitaxial SiGe/Si(100). Close similarity of the decay profiles was observed not only between D1 and D2 bands but also between D3 and D4 bands. The decay transients of the D1 and D2 bands at low temperatures are characterized by long decay times, τ(approximately-greater-than)200 ns, whereas the D3 and D4 bands exhibit even sharper transients with τ〈60 ns. Temperature dependence of "radiative'' lifetimes implies a free-to-bound nature of the D1 and D2 bands, while a bound-to-bound character of the luminescence origins for the D3, D4 bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3213-3217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the formation of a high-quality SrTiO3 (STO) film on a Si surface which is an appropriate buffer film for fabricating high-Tc superconductor devices on Si by molecular beam epitaxy. The STO films with thicknesses of 1300–6700 Å are grown on a SrO buffer layer with a thickness of 100 Å on Si(001)-2×1 in ∼10−8 Torr. The growth temperatures for the STO films and SrO layer are 500 and 400 °C, respectively. The as-grown STO films are insufficiently oxidized regarding the Ti–O bond which is confirmed by the observation of x-ray photoemission spectroscopy, although in situ reflection high-energy electron diffraction spectroscopy and ex situ x-ray diffraction (XRD) reveal a high-quality crystalline structure. The in situ postannealing for the as-grown STO films is performed at 500–900 °C for 60 min in an oxygen atmosphere of 1×10−6 Torr. The heat treatment promotes the oxidation of STO films and results in a high resistivity of 109–1011 Ω cm and a dielectric constant of 130 at 100 kHz at room temperature. The films consist of large grains with 150–200 nm diameter on the surface in the image of atomic force microscopy. The heat treatment does not prominently affect the crystallinity of STO films in the XRD patterns. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5662-5664 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoinduced decrease in permeability μ' is observed over 90% in a highly pure single crystal of yttrium-iron-garnet (YIG) grown by a floating zone method. Even after the illumination is removed, the influence remains up to 230 K. By annealing under oxygen atmosphere in the preparation stage, the magnitude of the effect is reduced to 40%. On warming after the sample is illuminated by a flash lamp at 77 K, the imaginary part of permeability μ‘ below 10 kHz is found to show the double peaks, activation energies of which are 0.1 and 0.3 eV, respectively. Besides, it has been observed that the dependence of magnitude of each peak on the strength of illumination is different. These features are discussed in terms of one or two electron F-type defects (oxygen vacancy) and photoexcited two levels.
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 94 (1972), S. 6501-6507 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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