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  • 1
    Publication Date: 1995-01-01
    Print ISSN: 0094-5765
    Electronic ISSN: 1879-2030
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Elsevier
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  • 2
    Publication Date: 2011-08-23
    Description: A new millimeter-wave package architecture with supporting electrical, mechanical and material science experiment and analysis is presented. This package is well suited for discrete devices, monolithic microwave integrated circuits (MMIC's) and multichip module (MCM) applications. It has low-loss wide-band RF transitions which are necessary to overcome manufacturing tolerances leading to lower per unit cost Potential applications of this new packaging architecture which go beyond the standard requirements of device protection include integration of antennas, compatibility to photonic networks and direct transitions to waveguide systems. Techniques for electromagnetic analysis, thermal control and hermetic sealing were explored. Three dimensional electromagnetic analysis was performed using a finite difference time-domain (FDTD) algorithm and experimentally verified for millimeter-wave package input and output transitions. New multi-material system concepts (AlN, Cu, and diamond thin films) which allow excellent surface finishes to be achieved with enhanced thermal management have been investigated. A new approach utilizing block copolymer coatings was employed to hermetically seal packages which met MIL STD-883.
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); Volume 43; No. 7; 1516-1523
    Format: text
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  • 3
    Publication Date: 2019-07-12
    Description: Report describes research on use of x-ray diffraction to measure stresses in metal conductors of complementary metal oxide/semiconductor (CMOS) integrated circuits exposed to ionizing radiation. Expanding upon report summarized in "X-Ray-Diffraction Tests Of Irradiated Electronic Devices: I" (NPO-18803), presenting data further suggesting relationship between electrical performances of circuits and stresses and strains in metal conductors.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: NPO-18825 , NASA Tech Briefs (ISSN 0145-319X); 17; 12; P. 96
    Format: text
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  • 4
    Publication Date: 2019-07-12
    Description: X-ray-diffraction tests performed on aluminum conductors in commercial HI1-507A complementary metal oxide/semiconductor (CMOS) integrated-circuit analog multiplexers, both before and after circuits exposed to ionizing radiation from Co(60) source, and after postirradiation annealing at ambient and elevated temperatures. Tests in addition to electrical tests performed to determine effects of irradiation and of postirradiation annealing on electrical operating characteristics of circuits. Investigators sought to determine whether relationship between effects of irradiation on devices and physical stresses within devices. X-ray diffraction potentially useful for nondestructive measurement of stresses.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: NPO-18803 , NASA Tech Briefs (ISSN 0145-319X); 17; 12; P. 95
    Format: text
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  • 5
    Publication Date: 2019-07-13
    Description: Advanced hermetic packages developed to house electronic circuits operating at frequencies from 1 to 100 gigahertz and beyond. Signals coupled into and out of packages electromagnetically. Provides circuit packages small, lightweight, rugged, and inexpensive in mass production. Packages embedded in planar microstrip and coplanar waveguide circuits, in waveguide-to-planar and planar-to-waveguide circuitry, in waveguide-to-waveguide circuitry, between radiating (antenna) elements, and between planar transmission lines and radiating elements. Other applications in automotive, communication, radar, remote sensing, and biomedical electronic systems foreseen.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: NPO-19094 , NASA Tech Briefs (ISSN 0145-319X); 18; 6; P. 24
    Format: text
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  • 6
    Publication Date: 2019-07-13
    Description: The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International SAMPE Electronics Conference; Jun 18, 1991 - Jun 20, 1991; Los Angeles, CA; United States
    Format: text
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  • 7
    Publication Date: 2019-07-12
    Description: Internal stress relieved by heating above glass-transition temperature. Report describes wide-angle x-ray scattering and differential scanning calorimetry of specimens of poly(etheretherketone) having undergone various thermal treatments. Wide-angle x-ray scattering particularly useful in determining distances between atoms, crystallinity, and related microstructurally generated phenomena, as thermal expansion and strain. Calorimetric measurements aid interpretation of scattering measurements by enabling correlation with thermal effects.
    Keywords: PHYSICAL SCIENCES
    Type: NPO-17097 , NASA Tech Briefs (ISSN 0145-319X); 12; 11; P. 50
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  • 8
    Publication Date: 2019-07-12
    Description: Report describes experiments on effects of biaxial stretching on crystal structures, dielectric properties, and sellected thermal and mechanical properties of biaxially stretched polycarbonate films. Highest stretch ratios produce highest degree of crystallinity, with single crystalline phase and distribution of crystallites more nearly isotropic than uniaxially oriented film. Electrical properties at high temperatures improved.
    Keywords: MATERIALS
    Type: NPO-18090 , NASA Tech Briefs (ISSN 0145-319X); 16; 9; P. 78
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  • 9
    Publication Date: 2019-07-12
    Description: Experiment demonstrated approximate linear correlation between degree of crystallinity of multiphase polymer (as calculated from x-ray diffraction measurements) and heat of fusion of polymer (as calculated from differential scanning calorimetry (DSC) measurements). Correlation basis of simple new technique for estimating degree of crystallinity of specimens of polymer from DSC measurements alone.
    Keywords: PHYSICAL SCIENCES
    Type: NPO-17958 , NASA Tech Briefs (ISSN 0145-319X); 15; 9; P. 77
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