ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Heavily boron-doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2 source (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 795-797 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500–700 °C using a HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550–700 °C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 °C without detectable oxygen incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101763
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Diffusion of Si in thin CoSi2 layers' '' [Appl. Phys. Lett. 55, 1804 (1989)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1804-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102325
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of Si in thin CoSi2 layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present evidence of Si diffusion in 100 A(ring) layers of CoSi2 grown by room-temperature codeposition and annealing on Si(111) substrates. By monitoring the intensity of the Co MVV and Si LVV Auger peaks, we find a Si-rich surface layer after annealing, in agreement with the results of others. We find that this layer can be removed by chemical etching and re-formed by subsequent annealing. By measuring the intensity of the plasmon energy loss peak associated with the Co L23 VV Auger peak, we conclude that the Si must exist on top of the CoSi2 and we obtain the effective Si overlayer thickness as a function of annealing temperature by calibrating the plasmon loss data against known overlayer thicknesses on unannealed samples. We find similar results on samples grown both with and without the addition of a 10 A(ring) Si cap to prevent pinhole formation in the CoSi2 and we have indications that the same type of diffusion occurs also beneath the native oxide layer on samples that have not had the surface Si removed by chemical etching. In all of the samples studied, Si diffusion was observed to be non-negligible at temperatures on the order of 400 °C, which is well below the point where pinhole formation is first observed. This result suggests that the diffusion does not depend on the presence of observable pinholes as previously thought.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101399
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Novel Si1−xGex/Si heterojunction internal photoemission long-wavelength infrared detectors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1422-1424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to the design of a Si-based infrared detector is demonstrated, based on internal photoemission over a Si1−xGex/Si heterojunction barrier. The heterojunction internal photoemission device structure is grown by molecular beam epitaxy (MBE). The detector requires a degenerately doped p+-Si1−xGex layer for strong infrared absorption and photoresponse. Doping concentrations to 1020 cm−3 are achieved using boron from a HBO2 source during MBE growth of the Si1−xGex layers. The photoresponse of this device is tailorable, and most significantly, can be extended into the long-wavelength infrared regime by varying the Ge ratio x in the Si1−xGex layers. Results are obtained with x=0.2, 0.28, 0.3, and 0.4 on patterned Si (100) substrates. Photoresponse at wavelengths ranging from 2 to 10 μm is obtained with quantum efficiencies above ∼1% in these nonoptimized structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103454
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of IrSi3/p-Si Schottky diodes by a molecular beam epitaxy technique (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2013-2015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: IrSi3/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 °C. Good surface morphology was observed for IrSi3 layers grown at temperatures below 680 °C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current-voltage characteristics were observed and Schottky barrier heights of 0.14–0.18 eV were determined by activation energy analysis and spectral response measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103002
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 434-436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high-quality single-crystal CoSi2 layers. Transmission electron microscopy has been used to examine as-deposited layers and layers annealed at 300, 500, and 600 °C. Single-crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as-deposited samples, while the layer is predominantly single-crystal, inhomogeneously strained CoSi2 at 300 °C. At 600 °C, a homogeneously strained single-crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99434
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 804-806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A solid phase epitaxy technique has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (103 cm−2 detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550–600 °C. CoSi2 films grown without the Si cap are found to have pinhole densities of 107–108 cm−2 when annealed at similar temperatures. A CF4 plasma etching technique was used to increase the visibility of the pinholes in the silicide layer. This plasma technique extends the pinhole detection resolution to 103 cm−2 and is independent of the pinhole size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99289
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of CoSi2 on porous Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1809-1811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoSi2 epitaxial layers with different thicknesses have been grown onto porous-Si substrates by molecular beam epitaxy. Good crystallinity is obtained for CoSi2 films thicker than 50 nm. The use of a thin buffer layer is found to be crucial in order to achieve abrupt interface and good crystallinity. Planar view transmission electron microscope images obtained from 30-nm-thick CoSi2 buffer-Si/porous-Si samples indicate that a large area of the epitaxial film is dislocation free, in contrast with a uniform distribution of misfit dislocations across relaxed CoSi2/single-crystal Si samples of the same thickness. This study suggests a possible pseudomorphic growth by using porous Si as a substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98530
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3531-3538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cobalt LMM Auger spectra are observed to undergo significant shape changes as a function of Si overlayer thickness and annealing temperature in Si/CoSi2 /Si heterostructures prepared by codeposition and solid phase epitaxy on Si(111) substrates. The changes are dominated by strong increases of the bulk plasmon loss intensity and shifts in the plasmon loss energy with increasing Si overlayer thickness. These effects can be used to probe the overlayers with electrons generated in the underlying layers. They are used here to measure the thickness of Si overlayers on CoSi2 . We find a linear relationship between the ratio of the plasmon loss peak associated with the Co-L23 VV Auger peak to the Auger peak itself and the known thickness of deposited Si overlayers for thicknesses up to 30 A(ring). Using this calibration, we monitor island formation in annealed Si/CoSi2 /Si and diffusion of Si in CoSi2 /Si. We deduce the formation of islands in the deposited Si overlayers at temperatures of 550 °C for thicknesses less than 30 A(ring). We observe Si diffusion in CoSi2 /Si at temperatures as low as 400 °C. We measure activation energies of 0.52–0.60 eV for the diffusion, as determined from Arhennius plots of the plasmon/Auger data, and conclude that the diffusion most likely proceeds through residual defects in the CoSi2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342627
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4082-4085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p+ layer to 0.89 eV for a sample with a 20-nm-thick p+ layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341315
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...