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  • 1
    Electronic Resource
    Electronic Resource
    Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2556-2559 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary defects induced by ion implantation in silicon after annealing have been previously shown to vary with the implantation and annealing conditions. However, in the low dose implants, well below the amorphization dose, the defects have been predominantly characterized to be interstitial in nature. In this article, we study the effect of implant temperature on secondary defects created by 1 MeV Sn implantation to a dose of 3×1013 cm−2 after subsequent annealing. We report a variation in the defect microstructure with implant temperature showing preferential formation of small interstitial loops for −191 °C and only rod-like defects for similar implants carried out at 300 °C. We conclude that these microstructures are a result of the dense cascades created by heavy Sn ions, creating local amorphous pockets in the implant damage region at the lowest implant temperatures. The variation of the microstructure with implant temperature is interpreted in terms of the effect of dynamic annealing over the defects formed in silicon. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340602
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1312-1318 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar damage distribution were compared. The mass of the implanted ion influences the type of defect observed. For all three implant species, rod-like {311} planar defects were observed. Additionally, in Ge and Sn implanted samples, small {111} interstitial faulted dislocation loops were observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373819
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructural difference between platinum and silver trapped in hydrogen induced cavities in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2713-2715 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering of implanted Pt and Ag to hydrogen-induced cavities in Si has been compared for doses from 1×1013 to 1×1015 cm−2. After annealing at 850 °C for 1 h, almost 100% of both implanted metals were relocated to the cavity band for doses less than 1×1014 cm−2. At higher doses, large differences were observed in the gettering behaviour of Pt and Ag, where the amount of Pt was saturated at close to a monolayer coverage of cavity walls, whereas the Ag accumulation at cavities continually increased with dose. Cross-sectional transmission electron microscopy revealed strong differences in the ability of Pt and Ag to form a bulk phase at the cavities. The results indicate that stable silicide formation at the near-surface and trapping of Ag to implantation damage are the main processes which limit gettering at the higher doses. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121108
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  • 4
    Electronic Resource
    Electronic Resource
    Gettering of Au to dislocations and cavities in silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 416-418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering of ion implanted Au to defects in Si has been studied using Rutherford backscattering and channeling and transmission electron microscopy. Damage from a Si implant anneals into dislocations which can efficiently trap diffusing Au. The damage introduced by a H implant evolves during annealing into cavities which getter close to 100% of the Au, leaving very little Au in solution. This process is driven by the diffusion of a supersaturated solid solution of Au to a favorable sink. The internal surfaces of cavities are the most favorable sink, followed by dislocations and then the Si surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114647
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  • 5
    Electronic Resource
    Electronic Resource
    The precipitation of Fe at the Si–SiO2 interface (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 580-584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the precipitation kinetics of Fe contamination at Si–SiO2 interfaces during dry oxidation at 900 °C. Transmission electron microscopy (TEM) and atomic force microscopy are used to monitor the interface roughness and precipitate density for oxides formed in the presence of both bulk and surface contamination of the Si. We show that the precipitating phase is β-FeSi2, the equilibrium Fe–Si phase (rather than α-FeSi2 or an iron silicate or iron oxide). The interface precipitate density is proportional to the surface Fe, and differs in float-zone and Czochralski Si. These precipitates correlate with the presence of sharp asperities at the interface. Detectable Fe precipitation is measured in TEM for contamination levels down to 1×1013 cm−2. In contrast, bulk contamination to above the solid solubility does not generate observable precipitation at the oxide interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366643
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  • 6
    Electronic Resource
    Electronic Resource
    Gettering of nickel to cavities in silicon introduced by hydrogen implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1889-1891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Almost complete gettering of Ni in (100) Si was obtained by initially implanting H to a depth of ∼0.9 μm, followed by Ni implantation close to the surface, and subsequent thermal annealing. H-induced cavities, as evidenced by transmission electron microscopy, act as efficient gettering sites for Ni. By performing Ni implantations at various doses and at elevated sample temperature, it was shown that formation of amorphous silicon caused by Ni implantation significantly reduces the gettering efficiency. The results will be discussed taking diffusion and solubility of Ni in Si into account, as well as formation of NiSi2 precipitates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113311
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  • 7
    Electronic Resource
    Electronic Resource
    Gettering of copper to hydrogen-induced cavities in silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1231-1233 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen implantation and subsequent thermal annealing is found to result in a well-defined band of cavities in Si. This band is an extremely efficient gettering layer for Cu which is also introduced into the near surface of Si by ion implantation. Profiling of implanted Cu indicates that ∼95% of an initial 3×1015 cm−2 Cu implant is redistributed following annealing at a temperature of 780 °C from a near-surface damaged layer to a narrow band of cavities of width ∼1000 A(ring) at a depth of ∼1 μm. Furthermore, the Si between the surface and the cavity band is essentially defect-free and that some cavities contain the bulk Cu3Si phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113246
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3044-3046 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preamorphous damage in p-type Si implanted with MeV Si ions and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si was implanted with 4 MeV Si at doses from 1×1013 to 1×1014 cm−2 and annealed at 800 °C for 15 min. For doses below this critical dose, a sharp peak is observed in the DLTS spectrum, corresponding to the signature of point defects. Above the critical dose, a broad DLTS peak is obtained, indicating the presence of extended defects. This behavior is found to be consistent with TEM analyses where extended defects are only observed for doses above the critical dose. This suggests a critical dose at which point defects from implantation act as nucleating sites for extended defect formation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121535
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1141-1143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×1012 to 1×1014 cm−2 then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar damage distribution for all implanted species. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123468
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  • 10
    Electronic Resource
    Electronic Resource
    The influence of cavities and point defects on boron diffusion in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2418-2420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cavities, formed in Si by hydrogen implantation and subsequent annealing, can provide strong sinks for metal interstitials and are ideal gettering sites for metal impurities. This letter reports the effect of cavities on the transient enhanced diffusion (TED) of boron. Boron implantation was carried out into wafers containing pre-formed cavities and TED of boron was suppressed during subsequent annealing. In some cases, the boron was introduced into an amorphous layer and the presence of cavities was also observed to reduce the amount of the transient enhanced diffusion occurring. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121372
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