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  • 1
    Electronic Resource
    Electronic Resource
    Thermally stimulated current of Li+ ion-implanted amorphous selenium (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3119-3123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermally stimulated current (TSC) technique is applied to examine the activation energy, capture cross sections, escape frequency, and trap polarity in amorphous Se (a-Se) implanted with low energy (〈20 keV) Li+ ions. TSC glow curves for Li+ -ion-implanted a-Se show two peaks near 230 and 330 K. The value of δ/ω is 0.46 for 230 K, which means that the thermally stimulated currents are due to the first-order kinetics. The trap activation energy levels obtained by peak shape method and various heating rate methods are distributed from 0.22 to 0.33 eV for the 230-K peak and to 1.42 eV for the 330-K peak. The values of the capture cross section and the escape frequencies are 2.75×10−19 cm2 and 5.5×105 s−1 for the 230-K peak, and 5.75×10−20 cm2 and 6.43×105 s−1 for the 330-K peak, respectively. It is found that the trapped charge carriers are mainly holes in Li+ ion-implanted a-Se.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348578
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of GaAs epitaxial layers on Si with growth assisted by electron-beam irradiation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4268-4270 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs films grown on untilted Si substrates and prepared by molecular-beam epitaxy were characterized by low-temperature photoluminescence (PL) spectroscopy. The GaAs layer was irradiated in situ with a 50 keV electron beam during growth. The PL spectrum of the electron-beam-irradiated GaAs/Si consisted of four well-resolved peaks at 1.502, 1.488, 1.471, and 1.434 eV. The peaks at 1.502 and 1.488 eV are related to the intrinsic emissions, and the peaks at 1.471 and 1.434 eV originate from the extrinsic emission band. The full width at half-maximum of the 1.488 eV emission band is only 2.8 meV, which is much smaller than the value obtained from the unirradiated GaAs/Si. The strain induced in the GaAs layer was estimated from the intrinsic peaks observed in the temperature range of 5–200 K. The PL properties of the species after postgrowth treatment, such as rapid thermal annealing are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354388
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  • 3
    Electronic Resource
    Electronic Resource
    Thermally stimulated current of amorphous selenium (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3115-3118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep trap properties such as activation energy, capture cross section, and polarity in the amorphous selenium bulk are investigated using a thermally stimulated current (TSC). Two peaks are found near 220 and 330 K in the TSC curve, and the activation energies corresponding to these two peaks are distributed from 0.20 to 0.22 eV and from 1.04 to 1.10 eV. It is found that the trapped carriers near the temperature 220 K are mainly holes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348577
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  • 4
    Electronic Resource
    Electronic Resource
    Surface passivation by sulfur treatment of undoped p-CdTe(100) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2013-2015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface passivation of undoped p-CdTe(100) by (NH4)2Sx treatment was investigated by using photoluminescence (PL), photoconductivity (PC), and x-ray photoelectron spectroscopy (XPS). After sulfur treatment for 2 min, the acceptor bound exciton (A0, X) peak increases greatly in the PL spectrum, and the minority-carrier lifetime of CdTe becomes the longest value in the PC measurement. The XPS spectrum for untreated CdTe shows the additional peaks on the right side of two main Te peaks corresponding to the Te 3d core levels, and these additional peaks are related to TeO3 with binding energies of 576.2 and 586.5 eV. After sulfur treatment, while the intensities of the Te 3d core levels decreased gradually, those of the TeO3 peaks disappear. In addition, the S 2p core-level spectra for sulfur-treated CdTe show the peaks at the 161.7 and 162.8 eV, which are attributed to a CdS formation at the surface of CdTe. These results indicate the sulfur effectively dissociates the native oxides from and neutralizes the dangling bonds at the surface of CdTe. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305551
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  • 5
    Electronic Resource
    Electronic Resource
    Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3257-3259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the ZnSe/GaAs heterostructure, the problems of interdiffusion and thermal stability are very crucial. We have investigated the effects of annealing on ZnSe grown on GaAs by photoluminescence and double-crystal x-ray measurement. In order to investigate annealing effects of the ZnSe/GaAs heterostructure, we used 1.0-μm-thick and 0.2-μm-thick samples. Samples were annealed in the temperature range of 200–500 °C in an N2 ambient for 3 min using a face-to-face configuration with ZnSe epitaxial layer as a cap layer. In the annealing temperature above 450 °C, new emission peaks appeared in the range of 2.62–2.72 eV. The biaxial compressive strain due to lattice mismatch at the growth temperature is mostly relaxed at 400 °C, and the epilayer annealed at 500 °C has a biaxial tensile strain. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120307
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  • 6
    Electronic Resource
    Electronic Resource
    Strain effects in CdTe/Si heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6012-6015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and spectroscopic ellipsometry measurements on CdTe/Si strained heterostructures grown by molecular beam epitaxy were carried out to investigate the effect of the strain and the dependence of the strain on the Si tilted substrates. The results of the PL spectra showed that the relative intensity ratio between the peak at 1.452 eV and the bound-exciton peak for the CdTe epilayer grown on the Si (100) 1° tilted substrate had a minimum value and that the strain for the CdTe epilayer grown on the Si (100) 8° tilted substrate had a minimum value. When rapid thermal annealing (RTA) was performed at 55 °C, the PL spectra showed that the relative intensity ratio between the peak at 1.452 eV and that at 1.574 eV for the CdTe epilayer grown on the Si (100) 8° tilted substrate had a minimum value and that the strain for the CdTe epilayer grown on the Si (100) 1° tilted substrate had a minimum value. Spectroscopic ellipsometry measurements showed that the spectrum of the dielectric constant of the CdTe epilayer grown on the Si (100) 8° tilted substrate is similar to that of the CdTe bulk. These results indicate that the strains in the CdTe layers grown on Si substrates are strongly dependent on the Si substrate orientation and that the crystallinity of the CdTe epitaxial layer grown on the Si substrate is remarkably improved by RTA. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366467
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 859-862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity (PC) measurements on as-grown, annealed, hydrogenated, and hydrogenated and annealed In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the trapping times of minority carriers in In-doped CdTe films due to annealing and hydrogenation. The results of the PC decay curve showed a slow component with a time constant of a few milliseconds and this behavior was related to the existence of deep trap levels corresponding to minority carriers. The activation energies of the traps, as determined from the temperature dependence of the PC decay times, were (Ev+0.35) and (Ev+0.43) eV for the as-grown and hydrogenated In-doped CdTe epilayers, respectively. The trapping times of the minority carriers were significantly reduced by the hydrogenation treatment. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370815
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  • 8
    Electronic Resource
    Electronic Resource
    Achievement of extremely high vacuum using a cryopump and conflat aluminium gaskets
    Amsterdam : Elsevier
    Vacuum 43 (1992), S. 309-311 
    Details
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0042-207X(92)90162-P
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  • 9
    Electronic Resource
    Electronic Resource
    Porous plug made of tungsten wires and its conductance
    Amsterdam : Elsevier
    Vacuum 42 (1991), S. 979-982 
    Details
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0042-207X(91)90003-2
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogenation Effects on In-doped CdTe Epilayers Grown on p-CdTe Substrates (1999)
    Springer
    Journal of materials science 18 (1999), S. 189-191 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006655627743
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