ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Magnetic decoupling in sputtered Fe/Si superlattices and multilayers : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6335-6337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Fe/Si superlattices were grown to study the magnetic coupling between ferromagnetic Fe layers (30 A(ring) thick) for Si spacer-layer thicknesses (tSi) between 10 and 40 A(ring). The material is ferromagnetical for tSi≤13 A(ring) and antiferromagnetically coupled for 13 A(ring)≤tSi≤17 A(ring). For tSi≥17 A(ring) the Fe layers are uncoupled. X-ray analysis indicates that the system is well layered, but that the crystal structure remains coherent only for tSi≤17 A(ring). These results, along with our Mössbauer investigation, strongly suggest that the Si layer is crystalline for tSi≤17 A(ring), and is silicide in nature. For thicker spacers, Si becomes amorphous. We propose a model of the layering that is consistent with the known properties of Fe silicide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352640
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 637-646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of heavily supersaturated C into Si using solid-phase epitaxy (SPE) of implanted amorphous layers. The strain in the Si1−xCx/Si heterostructures was measured using rocking curve x-ray diffraction. The microstructure and defect introduction were examined using ion channeling and transmission electron microscopy (TEM). The fraction of C located on substitutional lattice sites in the Si was monitored using Fourier transform infrared absorption spectroscopy and ion channeling at resonance energies. Carbon-depth profiles were monitored by secondary ion mass spectroscopy. The metastable solubility limit for the incorporation of C into Si by SPE was found to be 3.0–7.0×1020 atoms/cm3, which is over three orders of magnitude above the equilibrium solubility at the Si melting point. This limit was determined by the ability to regrow without the introduction of microtwins and stacking faults along {111} planes. We postulate the local bond deformation resulting from the atomic size difference between C and Si leads to the faceting of the amorphous–crystalline interface and allows defect introduction, thus limiting the C supersaturations achieved in Si by SPE. It was also found that the defect density in the regrown alloys could be reduced by higher SPE regrowth temperatures in rapid thermal anneal processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360806
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Precipitation and relaxation in strained Si1−yCy/Si heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3656-3668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Fourier transform infrared absorbance spectroscopy. Concurrent strain measurements were performed using rocking curve x-ray diffraction to correlate strain relaxation with the loss of substitutional C from the lattice. Loss of C from the lattice was initiated immediately without an incubation period, indicative of a low barrier to C clustering. The activation energy as calculated from a time to 50% completion analysis (3.3±5 eV) is near the activation energy for the diffusion of C in Si. Over the entire temperature range studied, annealing to complete loss of substitutional C resulted in the precipitation of C into β-SiC. The precipitates are nearly spherical with diameters of 2–4 nm. These precipitates have the same crystallographic orientation as the Si matrix but the interfaces between the Si and β-SiC precipitates are incoherent. During the initial stages of precipitation, however, C-rich clusters form which maintain coherency with the Si matrix so the biaxial strain in the heterostructure is partially retained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357429
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Magnetostriction of melt-spun Dy-Fe-B alloys : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7021-7023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetostriction of melt-spun ribbons of Dyx(Fe1−yBy)1−x (x=0.2, 0.25, 0.3; 0≤y≤0.2) alloys is systematically investigated as a function of the wheel speed during melt quenching. As the wheel speed increases from 10 to 50 m/s, the magnetic softness improves with the wheel speed rather continuously for the alloys with the Dy content x=0.2 and 0.25 but it exhibits a maximum at the wheel speed of 30 or 40 m/s for the alloys with the highest B content (x=0.3). The softness also improves with the B content for a fixed wheel speed. Homogeneous and ultrafine grain structure is observed for the first time even in the as-spun state when the ribbons of the alloy Dy0.3(Fe0.8B0.2)0.7 are fabricated at the wheel speed of 30 m/s. The ribbon having the ultrafine grain structure exhibits good magnetic softness together with a high strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358074
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Photo-induced antiferromagnetic interlayer coupling in Fe superlattices with iron silicide spacers (invited) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6169-6173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Fe/FeSi films possessing antiferromagnetic (AF) interlayer coupling at room temperature develop ferromagnetic remanence when cooled below 100 K, but the AF coupling can be restored at low temperature by exposure to visible light of sufficient intensity ((approximately-greater-than)10 mW/mm2). We attribute these effects to charge carriers in the FeSi spacer layer, which, when thermally or photogenerated, are capable of communicating spin information between the Fe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355446
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3578-3584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extent of relaxation and orientation of linearly graded InxAl1-xAs (x=0.05–0.25) buffers grown on GaAs were examined using a novel x-ray diffraction reciprocal-space mapping technique (kmap). Samples were grown at temperatures ranging from 370 to 550 °C. The fractional relaxation of the buffers grown between 470 and 550 °C was essentially identical (77%) and symmetric in orthogonal 〈110〉 directions. These buffers are believed to be in equilibrium indicating that the incomplete relaxation is not a kinetic effect. The extent of relaxation was less than that expected for equilibrium relaxation in the absence of dislocation–dislocation interactions indicating that such interactions must be considered to accurately predict the extent of relaxation. The saturation of the relaxation as a function of temperature indicates that at the grading rate used (8% In/μm or 0.69% strain/μm), we are not working in a growth regime where the relaxation is nucleation limited. In addition, all the buffers are slightly tilted with respect to the GaAs substrate about [11¯0] toward the [110] direction suggesting either a bias in the dislocation types in the boule-grown GaAs, or a bias in the way in which α and β dislocations interact with unintentional substrate miscuts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361410
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence and the band structure of InAsSb strained-layer superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 216-218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100135
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    New method to predict the magnetic properties of thin gauged Si–Fe sheets : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6483-6485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tertiary crystal growth method was used to fabricate thin gauged 3% Si–Fe sheets in order to reduce the thickness of the sheets without deteriorating soft magnetic properties. During the investigation, the magnetic properties of final annealed sheets were found to be directly related to the magnetic properties of final cold rolled sheets. X-ray and transmission electron microscopy were used to understand the above relation. It was found that the fraction of (110) grains at the surface of the final cold rolled sheets significantly affected the final magnetic properties of the final annealed sheets. On the basis of the above argument, the final magnetic properties of the thin gauged Si–Fe sheets can be predicted by the B10 values of the final cold rolled sheets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367702
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Demonstration of an InAsSb strained-layer superlattice photodiode (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1581-1583 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photodiode consisting of a p-n junction embedded in an InAs0.09Sb0.91/InSb strained-layer superlattice with equal 130-A(ring)-thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 μm at 77 K. The resistance and the minority-carrier diffusion length of the photodiode result in a detectivity (3×109 cm Hz1/2/W) at 7 μm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99087
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Magnetic properties of amorphous Sm–Fe and Sm–Fe–B thin films fabricated by radio-frequency magnetron sputtering : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7270-7272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of giant magnetostrictive Sm–Fe and Sm–Fe–B thin films are systematically investigated over a wide composition range from 14.1 to 71.7 at. % Sm. The amount of B added ranges from 0.3 to 0.8 at. %. The microstructure mainly consists of an amorphous phase in the intermediate Sm content range from 20 to 45 at. %. Together with an amorphous phase, crystalline phases of Fe and Sm also exist at low and high ends of the Sm content, respectively. Well-developed in-plane anisotropy is formed over the whole composition range, except for the low Sm content below 15 at. % and the high Sm content above 55 at. %. As the Sm content increases, the saturation magnetization decreases linearly and the coercive force tends to increase, with the exception of the low Sm content where very large magnitudes of the saturation magnetization and the coercive force are observed due to the existence of the crystalline α-Fe phase. The coercive force is affected rather substantially by the B addition, resulting in lower values of the coercive force in the practically important Sm content range of 30–40 at. %. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367616
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...