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  • 1
    Electronic Resource
    Electronic Resource
    Effect of stress sign and film thickness on interface nucleation of misfit dislocations in strained multilayers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4990-4993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation mechanism via the homogeneous nucleation of misfit dislocations from the heterointerface in coherently strained layers has been investigated with transmission electron microscopy. It is identified that the dislocations nucleated from the interface are displayed in the form of 90° partial, 30° partial, and 60° perfect dislocations, depending on stress sign and thickness of the strained layer. The tendency is interpreted in terms of the strain relaxation efficiency which is given by the ratio of relieved strain energy to dislocation line energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355790
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  • 2
    Electronic Resource
    Electronic Resource
    Vacancy-type defects in Si+ -implanted GaAs and its effects on electrical activation by rapid thermal annealing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6153-6158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distributions of vacancy-type defects in Si+ -implanted and thermally activated GaAs were studied by a slow positron beam technique and were compared with the results observed with a transmission electron microscope. In as-implanted GaAs, the concentration of vacancy-type defects decreased monotonically with increasing depth below the surface and the generation of point defects was demonstrated by the lattice image of transmission electron microscopy. The vacancy concentration is not dependent upon activation conditions; however, the electrical activation coefficiency obtained from Hall measurements is enhanced with increasing activation annealing time. This indicates that the electrical activation of Si+ -implanted GaAs is proceeding by the exchange of interstitial Si with substitutional Ga rather than the recombination of interstitial Si into Ga-related vacancies. The maximum number of extrinsic-type stacking faults was observed at 70–80 nm below the surface after the activation annealing, which is compared with that of vacancy-type defects, at 25–35 nm, obtained by the slow positron beam technique. This discrepancy in both of the damage distributions could originate in different types of defects existing along the depth below the surface, which was discussed with the high-energy recoil theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345177
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2617-2621 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of the trimethylgallium (TMGa) flow rate in the GaN buffer layer on the optical and structural quality. From low temperature photoluminescence measurements, a GaN overlayer grown on a buffer layer with the TMGa flow rate of 80 μmol/min shows the intense donor-acceptor pair transition peak at 3.27 eV and the weak yellow band emission at 2.2 eV, which are related with stacking faults and threading dislocations from transmission electron microscopy images, respectively. As the TMGa flow rate of the GaN buffer increases, the threading dislocation density rapidly decreased and stacking faults increased in the GaN overlayers. Also, a total threading dislocation density at the optimum condition of the buffer layer is the very low 1×108 cm−2, which is due to the interaction of stacking faults with the vertical threading dislocations and the bending of threading dislocations near the stacking faults. High-resolution x-ray diffraction results show that a high density of stacking faults is correlated with the compressive strain of a GaN overlayer at the growth temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1344213
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructural degradation during Zn diffusion in a GaInAsP/InP heterostructure: Layer mixing, misfit dislocation generation, and Zn3P2 precipitation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4063-4072 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural degradation of a lattice-matched Ga0.28In0.72As0.61P0.39/InP heterointerface during Zn diffusion has been investigated using high resolution transmission electron microscopy and Auger electron spectroscopy. The diffusion-induced intermixing of In and Ga across the GaInAsP/InP interface causes tensile stress in the Ga-mixed InP side and compressive stress in the In-mixed GaInAsP side. The effect of the localized interfacial stress on the nucleation of misfit dislocations and on the strain accommodation behaviors thereof are clearly revealed throughout the intermixed region, reaching several thousand angstroms on each side of the interface. The interfacial strain is relaxed by generation of paired dislocations with antiparallel Burgers vectors initiating from the intermixed GaInAsP/GaInP interface. The dislocation morphologies reveal striking contrasts across the intermixed interface: stacking faults in the tensile layer and perfect dislocation tangles in the compressive layer. The dislocation lines are concentrated at the GaInAsP/GaInP interface and along the misfit boundaries in the forefront areas of the intermixed region. A model is proposed to explain the strain relaxation behavior in the intermixed region using the mechanism of homogeneous nucleation and splitting of the paired dislocations from the intermixed interface. Also observed in a limited region on the GaInP side is the precipitation of a Zn3P2 phase. The Zn3P2 precipitates grow to form epitaxial layers to a certain depth of the intermixed GaxIn1−xP layer, where the Zn3P2 crystal lattice coherently matches with the matrix crystal lattice. The precipitation reaction of Zn3P2 is explained using the kickout mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352260
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of epitaxial C54 TiSi2 on Si(111) substrate by in situ annealing in ultrahigh vacuum (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3812-3815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Ti and the formation of epitaxial Ti silicide on Si(111)-7×7 were investigated by using reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM). The growth mode of Ti is Stransky–Krastanov type when the substrate temperature is room temperature (RT). On the other hand, it is Volmer–Weber type when the substrate temperature is ∼550 °C. The HRTEM lattice image and transmission electron diffraction pattern show that C54 TiSi2 is grown epitaxially on a Si substrate when 160 ML of Ti is deposited on a Si(111)-7×7 surface at RT followed by in situ annealing at 750 °C for 10 min in ultrahigh vacuum (UHV). The TiSi2/Si interface is somewhat incoherent, but the developed TiSi2 crystallites are single crystal with matching face relationships of TiSi2(111)(parallel)Si(111), TiSi2(311)(parallel)Si(111), and TiSi2(022)(parallel)Si(111). A thin single-crystal Si overlayer with [111] direction is grown on the TiSi2 surface when TiSi2/Si(111) is annealed at ∼900 °C in UHV, which is confirmed by observing the Si(111)-7×7 RHEED pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350895
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  • 6
    Electronic Resource
    Electronic Resource
    A study of lattice damage in silicon induced by BF+2 ion implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4176-4180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice damages induced by BF+2 ion implantation in single-crystalline silicon have been analyzed using secondary-ion mass spectrometry, ion channeling technique in Rutherford backscattering spectroscopy, and transmission electron microscopy. Concentration depth profiles of boron and fluorine showed the same values of projection range 400 A(ring) at all doses for 50-keV energy. A considerable amount of damage was formed in the silicon lattice and the surface region of the substrate was amorphized when the dosage exceeded a critical value, which was determined to be 8.0 × 1014/cm2 experimental dose. The amorphized layer showed a clear boundary to the crystalline silicon, which contains severely damaged regions identified to be microamorphous clusters. He2+ ion channeling data revealed that the integrated damage in implanted layers increases linearly with dosage up to the critical dose and increases with a much smaller rate with further increase in the dosage. It is suggested that the integrated damage shows a smaller damage rate once the surface was amorphized because there can be no further increase of lattice damage in the amorphous layer. The calculated values of the integrated damage based on a model for damage formation agree well with the measured ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349141
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  • 7
    Electronic Resource
    Electronic Resource
    Surface roughness and defect morphology in electron cyclotron resonance hydrogen plasma cleaned (100) silicon at low temperatures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3590-3592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface roughening of (100) Si at low temperatures during electron cyclotron resonance hydrogen plasma cleaning is studied in an ultrahigh vacuum environment. The effects of process parameters on surface roughness are quantitatively analyzed by atomic force microscopy besides reflection high energy electron diffraction. Crystalline defect morphology is studied by transmission electron microscopy to understand its role in surface roughness. Surface roughness is strongly related to the nucleation and growth of {111} platelet defects at the Si subsurface region and the preferential etching at positions where {111} platelet defects intersect the Si surface. Hydrogen ion flux and substrate temperature can be successfully controlled to tailor the {111} platelet defects, therefore, surface roughness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115327
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial ReSi2 films on an n-Si(100) substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1046-1050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical characteristics of 300 keV Si+ or 380 keV Ar+ ion-implanted epitaxial ReSi2 films grown on an n-Si(100) substrate have been studied by using 2 MeV 4He+ ion backscattering spectrometry, x-ray diffraction, high-resolution transmission electron microscopy, and electrical measurement. Ion implantation causes static disorder in the film, which overlap and grow to become an amorphous layer. The threshold dose for amorphizing the ReSi2 film is ∼5×1014/cm2 for 28Si+ and ∼1×1014/cm2 for 40Ar+. Although the resistivity of the implanted ReSi2 film decreases when the degree of disorder (or the implantation dose) is increased, the resistivity reaches a minimum value at a dose of ∼1×1015/cm2 for Si+ or ∼5×1014/cm2 for Ar+. The 28Si+-implanted amorphous ReSi2 films recovered original epitaxy after thermal annealing at 700 °C for 30 min in vacuum, as do the partly amorphized ReSi2 films by 40Ar+ implantation. On the other hand, those films fully amorphized by 40Ar+ implantation (dose≥1×1014/cm2) did not recover after thermal annealing, even when exposed to a temperature as high as 1000 °C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354951
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  • 9
    Electronic Resource
    Electronic Resource
    Atomic structure of twins in GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 346-347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of twins with different atomic structure may exist in GaAs: rotation type and reflection type. A selective chemical etching technique was employed to clarify which of these two twin types occurs in practical GaAs crystals. Twins in an As-rich horizontal Bridgman (HB) GaAs, a Ga-rich HB GaAs, and a liquid-encapsulated Czochralski GaAs were studied, and the results showed that all of the studied twins were rotation type. This suggests that the bonding configuration at the twin plane is a more important factor than stoichiometry of the crystal, in determining the type of twins in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103687
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  • 10
    Electronic Resource
    Electronic Resource
    Formation of a small palladium cluster by anchoring on a multivalent cation in a zeolite supercage studied by xenon adsorption (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 8546-8552 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100175a026
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