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  • 1
    Electronic Resource
    Electronic Resource
    Formation of a small palladium cluster by anchoring on a multivalent cation in a zeolite supercage studied by xenon adsorption (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 8546-8552 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100175a026
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructural degradation during Zn diffusion in a GaInAsP/InP heterostructure: Layer mixing, misfit dislocation generation, and Zn3P2 precipitation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4063-4072 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural degradation of a lattice-matched Ga0.28In0.72As0.61P0.39/InP heterointerface during Zn diffusion has been investigated using high resolution transmission electron microscopy and Auger electron spectroscopy. The diffusion-induced intermixing of In and Ga across the GaInAsP/InP interface causes tensile stress in the Ga-mixed InP side and compressive stress in the In-mixed GaInAsP side. The effect of the localized interfacial stress on the nucleation of misfit dislocations and on the strain accommodation behaviors thereof are clearly revealed throughout the intermixed region, reaching several thousand angstroms on each side of the interface. The interfacial strain is relaxed by generation of paired dislocations with antiparallel Burgers vectors initiating from the intermixed GaInAsP/GaInP interface. The dislocation morphologies reveal striking contrasts across the intermixed interface: stacking faults in the tensile layer and perfect dislocation tangles in the compressive layer. The dislocation lines are concentrated at the GaInAsP/GaInP interface and along the misfit boundaries in the forefront areas of the intermixed region. A model is proposed to explain the strain relaxation behavior in the intermixed region using the mechanism of homogeneous nucleation and splitting of the paired dislocations from the intermixed interface. Also observed in a limited region on the GaInP side is the precipitation of a Zn3P2 phase. The Zn3P2 precipitates grow to form epitaxial layers to a certain depth of the intermixed GaxIn1−xP layer, where the Zn3P2 crystal lattice coherently matches with the matrix crystal lattice. The precipitation reaction of Zn3P2 is explained using the kickout mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352260
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  • 3
    Electronic Resource
    Electronic Resource
    A study of lattice damage in silicon induced by BF+2 ion implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4176-4180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice damages induced by BF+2 ion implantation in single-crystalline silicon have been analyzed using secondary-ion mass spectrometry, ion channeling technique in Rutherford backscattering spectroscopy, and transmission electron microscopy. Concentration depth profiles of boron and fluorine showed the same values of projection range 400 A(ring) at all doses for 50-keV energy. A considerable amount of damage was formed in the silicon lattice and the surface region of the substrate was amorphized when the dosage exceeded a critical value, which was determined to be 8.0 × 1014/cm2 experimental dose. The amorphized layer showed a clear boundary to the crystalline silicon, which contains severely damaged regions identified to be microamorphous clusters. He2+ ion channeling data revealed that the integrated damage in implanted layers increases linearly with dosage up to the critical dose and increases with a much smaller rate with further increase in the dosage. It is suggested that the integrated damage shows a smaller damage rate once the surface was amorphized because there can be no further increase of lattice damage in the amorphous layer. The calculated values of the integrated damage based on a model for damage formation agree well with the measured ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349141
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial ReSi2 films on an n-Si(100) substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1046-1050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical characteristics of 300 keV Si+ or 380 keV Ar+ ion-implanted epitaxial ReSi2 films grown on an n-Si(100) substrate have been studied by using 2 MeV 4He+ ion backscattering spectrometry, x-ray diffraction, high-resolution transmission electron microscopy, and electrical measurement. Ion implantation causes static disorder in the film, which overlap and grow to become an amorphous layer. The threshold dose for amorphizing the ReSi2 film is ∼5×1014/cm2 for 28Si+ and ∼1×1014/cm2 for 40Ar+. Although the resistivity of the implanted ReSi2 film decreases when the degree of disorder (or the implantation dose) is increased, the resistivity reaches a minimum value at a dose of ∼1×1015/cm2 for Si+ or ∼5×1014/cm2 for Ar+. The 28Si+-implanted amorphous ReSi2 films recovered original epitaxy after thermal annealing at 700 °C for 30 min in vacuum, as do the partly amorphized ReSi2 films by 40Ar+ implantation. On the other hand, those films fully amorphized by 40Ar+ implantation (dose≥1×1014/cm2) did not recover after thermal annealing, even when exposed to a temperature as high as 1000 °C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354951
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of epitaxial C54 TiSi2 on Si(111) substrate by in situ annealing in ultrahigh vacuum (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3812-3815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Ti and the formation of epitaxial Ti silicide on Si(111)-7×7 were investigated by using reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM). The growth mode of Ti is Stransky–Krastanov type when the substrate temperature is room temperature (RT). On the other hand, it is Volmer–Weber type when the substrate temperature is ∼550 °C. The HRTEM lattice image and transmission electron diffraction pattern show that C54 TiSi2 is grown epitaxially on a Si substrate when 160 ML of Ti is deposited on a Si(111)-7×7 surface at RT followed by in situ annealing at 750 °C for 10 min in ultrahigh vacuum (UHV). The TiSi2/Si interface is somewhat incoherent, but the developed TiSi2 crystallites are single crystal with matching face relationships of TiSi2(111)(parallel)Si(111), TiSi2(311)(parallel)Si(111), and TiSi2(022)(parallel)Si(111). A thin single-crystal Si overlayer with [111] direction is grown on the TiSi2 surface when TiSi2/Si(111) is annealed at ∼900 °C in UHV, which is confirmed by observing the Si(111)-7×7 RHEED pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350895
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2617-2621 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of the trimethylgallium (TMGa) flow rate in the GaN buffer layer on the optical and structural quality. From low temperature photoluminescence measurements, a GaN overlayer grown on a buffer layer with the TMGa flow rate of 80 μmol/min shows the intense donor-acceptor pair transition peak at 3.27 eV and the weak yellow band emission at 2.2 eV, which are related with stacking faults and threading dislocations from transmission electron microscopy images, respectively. As the TMGa flow rate of the GaN buffer increases, the threading dislocation density rapidly decreased and stacking faults increased in the GaN overlayers. Also, a total threading dislocation density at the optimum condition of the buffer layer is the very low 1×108 cm−2, which is due to the interaction of stacking faults with the vertical threading dislocations and the bending of threading dislocations near the stacking faults. High-resolution x-ray diffraction results show that a high density of stacking faults is correlated with the compressive strain of a GaN overlayer at the growth temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1344213
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of stress sign and film thickness on interface nucleation of misfit dislocations in strained multilayers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4990-4993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation mechanism via the homogeneous nucleation of misfit dislocations from the heterointerface in coherently strained layers has been investigated with transmission electron microscopy. It is identified that the dislocations nucleated from the interface are displayed in the form of 90° partial, 30° partial, and 60° perfect dislocations, depending on stress sign and thickness of the strained layer. The tendency is interpreted in terms of the strain relaxation efficiency which is given by the ratio of relieved strain energy to dislocation line energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355790
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic structure of twins in GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 346-347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of twins with different atomic structure may exist in GaAs: rotation type and reflection type. A selective chemical etching technique was employed to clarify which of these two twin types occurs in practical GaAs crystals. Twins in an As-rich horizontal Bridgman (HB) GaAs, a Ga-rich HB GaAs, and a liquid-encapsulated Czochralski GaAs were studied, and the results showed that all of the studied twins were rotation type. This suggests that the bonding configuration at the twin plane is a more important factor than stoichiometry of the crystal, in determining the type of twins in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103687
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  • 9
    Electronic Resource
    Electronic Resource
    Visible luminescences from thermally grown silicon dioxide thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3402-3404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce visible photoluminescences (PL) of violet (432 nm) and yellow (561 nm) at room temperature from thermally treated silicon dioxide thin films. These luminescences were very strong with a near infinite degradation time. At an oxide layer thickness less than 200 nm, these luminescences were not seen, even with high temperature annealing at about 1000 °C. As a result of photoluminescence, x-ray photoelectron spectroscopy, Fourier transform infrared, and high-resolution transmission electron microscopy measurements, we conclude that the violet PL originates from the nanocrystalline silicon formed in the silicon oxide film by the thermal strain effect between the silicon substrate and the silicon dioxide film, while the yellow PL originates from the radiative decay of self-trapped excitons that are confined to oxygen sufficient structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117273
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal stabilities and microstructures of tungsten compound contacts on n-GaAs fabricated by low-energy ion-beam-assisted deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1767-1769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-energy ion-beam-assisted deposition (IBAD) technique has been developed to fabricate W-Si-N Schottky contacts of enhanced thermal stabilities on n-GaAs. By implementing remote sputtering and glancing angle low-energy N+ ion irradiation, the thermal stabilities of the W-Si-N/n-GaAs Schottky contacts were enhanced to be stable up to 850 °C, while keeping the Schottky barrier heights to the best values obtained with conventional sputtering. Thermal stabilities of the IBAD refractory metals/n-GaAs interfaces were investigated also for various W-Si-N compositions by examining the microstructure and Schottky diode characteristics. WSi0.3N0.4 showed the most stable Schottky contacts on n-GaAs of which the barrier height changed only 20 meV after thermal annealing between 700 and 850 °C, and that is proposed to be due to the stable metallurgical microstructure compared to the element tungsten and tungsten nitride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106194
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