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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering study of GaN films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4058-4062 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of GaN films grown by molecular-beam epitaxy and hydride vapor-phase epitaxy on GaAs and Al2O3 substrates have been studied. It was found that longitudinal phonon modes disappear from the spectra of n+ films due to screening by free carriers, but coupled plasmon phonon modes of the higher-energy branch are not observed because of strong damping of plasmons. Precise values for phonon frequencies and linewidths are presented. No differences in phonon frequencies for the films of different thicknesses grown on different substrates have been found which indicates that the strain due to lattice and thermal-expansion mismatch is relaxed by the formation of the dislocations very close to the substrate–film interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363367
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  • 2
    Electronic Resource
    Electronic Resource
    Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1754-1756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: III–V nitride semiconductors have great potential for optoelectronic and electronic devices due to their wide direct band gaps. Because GaN is chemically very stable, dry etching techniques must be established in order to fabricate devices. In this work, we report the reactive ion etching (RIE) of GaN using CHF3/Ar and C2ClF5/Ar plasmas. GaN films on (001) GaAs were grown by electron cyclotron resonance (ECR) plasma associated molecular beam epitaxy (MBE) and the films showed (0001)hex orientation along the surface normal. We used a Drytek DRIE-184 rf plasma discharge RIE system with no ECR discharge or high energy Ar ion beam. The effects of rf plasma power, pressure, and gas flow rates on the etch rate were investigated and the surface contamination due to RIE was examined by XPS. The etch rate varied between 60 and 470 A(ring)/min. The conditions for etching were 100–500 W of rf plasma power, 60–300 mTorr of pressure, a CHF3 or C2ClF5 flow rate of 5–50 sccm and an Ar flow rate of 0–50 sccm. The highest etch rates were obtained with high rf plasma power and low pressure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115039
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  • 3
    Electronic Resource
    Electronic Resource
    Improved Carbon Counter Electrodes for Dye Sensitized Solar Cells (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 31 (Nov. 2007), p. 176-178 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We fabricated improved carbon counter electrodes to improve conversion efficiency of dyesensitized solar cells (DSSCs). Unlike conventional carbon counter electrodes, we added smallquantity of TiO2 nano powder and used chemical sintering methodology developed by Park’s groupto make surface morphology of the electrodes to change. Through these methods, we could observechange of surface morphology of carbon electrodes and influences on short circuit current density(JSC) and conversion efficiency
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.176.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Glass Substrate with UV Imprinted Polymer Moth Eye Structure (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 47-50 (June 2008), p. 1241-1244 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Artificial polycarbonate moth eye structured plate was used to emboss the moth eyenano-pattern into PVC films. Embossing was done at 100°C to prevent any damage onpolycarbonate template. With embossing of moth eye nano-patterns, transmittance of PVC filmwas increased up to 6% over 400nm to 800nm wavelength region. This embossed PVC film wasthen used as an imprint template after depositing thin layer of SiO2 and self-assembled monolayer.Consequently, polymer based moth eye nano-patterns were formed on glass template after UVimprinting and its transmittance was increased from 90% to 92%
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.47-50.1241.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of UV Illumination on Deposition of Low-k Si-O-C(-H) Films by PECVD (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 449-452 (Mar. 2004), p. 473-476 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The characteristics of plasma are important for the deposition of SiOC(-H) low dielectric thin film. The effect of UV light illumination on the plasma parameter in the capacitive coupled plasma chemical vapor deposition (CCP-CVD) system is investigated. The electron density is almost not changed, but the electron temperature decreases by UV light illumination. The deposition rate increases and the dielectric constant of the film is lowered with UV light
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.449-452.473.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Embossing Lithography on Sticky Thermoset Polymer Using Ni Template (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 124-126 (June 2007), p. 147-151 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Embossing lithography is one of the most promising technologies for mass production ofnano-scale structures. To advance the industrialization of embossing lithography, fabrication of lowcost, high mechanical strength embossing template is essential. Electroformed Ni template can beused as an embossing template if its poor anti-adhesive property is fixed by proper releasing layertreatment, especially, when it is used with sticky thermoset polymer.In this experiment, quartz master template with 200nm to 2um sized surface protrusions wasfabricated and used to emboss the PMMA coated Si wafer. Then the embossed PMMA layer wascoated with metal seed layer (Ni) and electroplating of Ni was followed to fabricate Ni template.To apply anti-stiction SAM layer, SiO2 and Si layer was coated on Ni template. With properanti-stiction treatment of Ni template, sub-micron patterns were successfully transferred to stickythermoset polymers such as epoxy resin using Ni template without any degradation of anti-adhesiveproperty
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.147.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication of 100nm Sized Patterns on Flexible Polyethylene-Terephthalate Substrate Using Monomer Based Thermal Curing Nanoimprint Lithography (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 657-660 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In order to build a nano-device on polymer substrate, nano-size patterningmust be done. However, conventional photolithography cannot be used to fabricatenano-sized patterns on polymer film due to the flexibility of polymer film and itspotential interaction with developer solution and organic solvent. In this study, 100nmsized dense line and space patterns were made on flexible PET(polyethylene-terephthalate) substrate using newly developed monomer basedimprinting lithography. Compared to hot embossing lithography, thermal curingimprint lithography uses monomer based imprint resin which consists of basemonomer and thermal initiator. Since it is liquid phase and polymerizationtemperature is much lower than glass temperature of polymer, the nano-sized patternscan be transfer at much lower temperature and pressure. Hence, patterns as small as100nm were successfully fabricated on flexible PET film substrate by monomer basedthermal curing imprinting lithography at 85ºC and 5atm
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.657.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Coherency and Surface Stress Effects on Phase Stability of Isolated Nanoparticles (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 979-982 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The coherent phase equilibria of binary nanoparticles, in which three phases can be formed,were examined by accounting for the particle size effect engendered by the surface stress. Consideringthe system geometry exhibiting radial symmetry, coherent phase diagrams could be constructed fordifferent particle sizes. The phase diagrams exhibited several characteristics of phase equilibriaunique to coherent systems. It was found that a positive surface stress results in a radial compressivestress in the particle that is inversely proportional to the particle radius, thereby increasinglystabilizing the phase having a lower molar volume as the particle size decreases
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.979.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Patterning of the Self-Assembled Monolayer Using the Zero Residual Nano-Imprint Lithography (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 124-126 (June 2007), p. 523-526 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Self-Assembled Monolayer (SAM) is a single layer of ordered molecules absorbed on asurface by chemical bonding between the molecular head group and the surface. The surfaceproperties can be controlled by the terminal functional group of the SAM layer. In order to utilizeSAM layers for device applications, SAM layer needs to be patterned as a sub-micron size. Patterningof SAM layer in sub-micron size has been done by various techniques including direct-writing bydip-pen nano lithography, selective etching with UV photons, and selective deposition of SAM layerby &-contact printing. In this study, silane based SAM layer was patterned to the sub-micron sizeusing zero residual Nano imprint Lithography, which is regarded as next generation lithographytechnique due to its simplicity, high throughput and high resolution pattern transferring capability.Using zero-residual layer imprinting, 300nm~2um sized SAM patterns can successfully fabricated. Inorder to check the surface property of patterned SAM layer, a solution containing nano Ag particleswas spin-coated on the SAM patterned substrate and nano Ag particles were selectively deposited onthe substrate
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.523.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Electrodeposition of CdS Nanostructures for Solar Cells Using Nano Imprint Templates (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 124-126 (June 2007), p. 967-970 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: We fabricated a CdS nano structures/CdS window layer/ ITO coated glass usingelectrodeposition and nano imprinting technology (NIT). The CdS nano-structures wereelectrodeposited using Na2S2O3 and CdSO4 electrolytes as the CdS sources and nano-imprinttemplates. The x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS) results showthe electrodeposited CdS window layer and the secondary electron microscopy (SEM) analysisshowed the well aligned CdS nano-structure shape
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.967.pdf
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