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  • 1
    Electronic Resource
    Electronic Resource
    Structural and optical characterization of InP/GaxIn1−xAsyP1−y quantum wells and interfacial layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4033-4039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several multiquantum wells of InP/GaxIn1−xAsyP1−y grown by chemical-beam epitaxy have been studied by high-resolution x-ray diffraction, low-temperature photoluminescence, and Raman scattering to characterize interfacial layers between the barriers and the wells. These interfacial layers are created during the initial stage of growth of the quaternary material as a result of the longer transient for the saturation of the group-III elements flux. The combination of x-ray diffraction and photoluminescence allows a precise determination of the interfacial layer thickness and composition grading and shows that interface roughness is of the order of 1 monolayer. Raman scattering confirms these results and is used to determine values of the sound velocity and of the index of refraction in the quaternary alloy material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363363
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  • 2
    Electronic Resource
    Electronic Resource
    Light scattering from spin waves in MnF2 : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6883-6885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the weak one-magnon light scattering in the antiferromagnet MnF2, including Stokes and anti-Stokes scattering, as a function of temperature are reported. From the theoretical analysis of the temperature and polarization dependences of the integrated Raman intensities, values are deduced for the ratio of quadratic and linear magneto-optical coupling coefficients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358100
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  • 3
    Electronic Resource
    Electronic Resource
    Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1450-1459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray diffraction, specular reflectivity, and diffuse scattering, complemented by Raman spectroscopy, to study the interfaces in a series of (0.5 nm Ge/2 nm Si)50 atomic layer superlattices on (001)Si grown by molecular beam epitaxy in the temperature range 150–650 °C. X-ray specular reflectivity revealed that the structures have a well-defined periodicity with interface widths of about 0.2–0.3 nm in the 300–590 °C temperature range. Offset reflectivity scans showed that the diffuse scattering peaks at values of perpendicular wave vector transfer corresponding to the superlattice satellite peaks, indicating that the interfaces are vertically correlated. Transverse rocking scans of satellite peaks showed a diffuse component corresponding to an interface corrugation of typical length scale of ∼0.5 μm. The wavelength of the undulations is a minimum along the miscut direction and is typically 30–40 times larger than the surface average terrace width assuming monolayer steps, independently of the magnitude of the wafer misorientation. The amplitude of the undulation evolves with growth temperature and is minimum for growth at ∼460 °C and peaks at ∼520 °C. Raman scattering showed the chemical abruptness of the interfaces at low growth temperatures and indicated a change in the growth mode near 450 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363013
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  • 4
    Electronic Resource
    Electronic Resource
    Visible photoluminescence from helium-ion implanted carbon in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6185-6188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon wafers implanted with 30 keV He ions at room temperature in a low pressure hydrocarbon atmosphere exhibited visible photoluminescence. The samples were characterized by Raman, infrared, transmission electron microscopy, and heavy ion elastic recoil detection analysis. Two different layers were distinguishable on top of the silicon, with the upper layer comprising mostly amorphous carbon, as confirmed on a similarly implanted Be sample. Green photoluminescence was found to arise from the thinner a-Si1−xCx:H interface layer. Such a buried intermixed layer could be incorporated into a stable visible light emitting device based on crystalline silicon. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360563
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  • 5
    Electronic Resource
    Electronic Resource
    Relaxation in tensile-strained InAlSb/InSb heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1466-1470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction has been used to measure the residual strain in In1−xAlxSb (x=0.15–0.64) layers of thickness h=0.1 μm, grown epitaxially on (100) InSb substrates. The results for this tensile-strained system are compared with a well-studied compressive-strain system, viz., InGaAs/GaAs. Experimental evidence is presented which suggests that the strain relaxation mechanism in this system is different from that in InGaAs/GaAs. This includes an observed critical layer thickness (hc) which is about five times the hc given by the Matthews and Blakeslee [J. Cryst. Growth 27, 118 (1974)] type models and a measured relaxation coefficient which is quasilinear in h/hc for 5〈h/hc〈35. The results have also been compared with predictions of the Dodson–Tsao (DT) model [Appl. Phys. Lett. 51, 1710 (1987)] which fits well the quasilinear behavior of the relaxation coefficient. In addition, it is argued that the DT equation provides a generic model that is not restricted to dislocation-mediated strain relief. Other possible mechanisms of strain relaxation in InAlSb/InSb are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358894
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  • 6
    Electronic Resource
    Electronic Resource
    Composition of AlGaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1683-1694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Although the AlxGa1−xAs alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of x. Here a new AlxGa1−xAs calibration structure, grown by molecular beam epitaxy, has been used to establish unambiguous alloy compositions. Such "standard'' AlxGa1−xAs layers were measured by high-resolution x-ray diffraction, photoluminescence, and Raman spectroscopy to determine the compositional variations of the measured physical parameters. The phenomenological equations derived from these measurements can now be used to establish the Al content of unknown alloys with confidence. In addition, the results show that Vegard's law does not hold for the variation of the AlxGa1−xAs lattice constant with x. The small quadratic term has very important implications for a correct analysis of x-ray results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364012
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  • 7
    Electronic Resource
    Electronic Resource
    Structure damage in reactive-ion and laser etched InP/GalnAs microstructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1488-1491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of a chemical-beam-epitaxy-grown InP/InGaAs multilayer structure with reactive ion etching (RIE) and laser-assisted dry etching ablation (LADEA) is carried out in order to evaluate the extent of the damage induced by these two etching methods. Micro-Raman spectroscopy indicates a systematic broadening of the phonon lines as a function of depth of a RIE fabricated crater. In contrast, LADEA which is based on the application of an excimer laser for the removal of the products of chemical reaction, shows no measurable changes in the phonon line widths when compared to as-grown material. The results suggest that LADEA has potential for the photoresistless fabrication of damage free microstructures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360763
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  • 8
    Electronic Resource
    Electronic Resource
    Surface segregation during Si/Gen/Si(100) interface formation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3911-3913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy was used to detect the segregated Ge in the Si cap layer of a Si/Gen/Si(100) heterostructure. Surface oxide peaks were used to identify unambiguously the surface segregated Ge atoms. A close to atomic layer-by-layer profile was obtained through room-temperature UV-ozone oxidation and selective chemical etching. The results show that there is always certain amounts of Ge distributed throughout the cap layer irrespective of the initial amount of Ge deposited. The total amount of segregated Ge from Gen/Si(100) was found to be about 2 monolayers. The Ge concentration is found to be higher on the cap layer surface than in the cap layer. Raman spectroscopy was also used to profile the Ge-Ge and Ge-Si vibrational lines, and the results confirm Ge segregation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357399
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  • 9
    Electronic Resource
    Electronic Resource
    Phonons in strained In1−xGaxAs/InP epilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6423-6428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to assess the concentration dependence of optical phonons in In1−xGaxAs epilayers grown by chemical beam epitaxy on InP(100). The alloy composition was varied from x=0.325 to x=0.55 to cover the technologically important and physically interesting range where the strain changes sign at x=0.468 from negative to positive. The Raman spectra were curve resolved to reveal the GaAs-like longitudinal optic (LO), disorder induced, InAs-like LO, and InAs-like transverse optic phonons. An examination of the concentration dependence of the phonon frequencies showed that the GaAs-like LO mode varied as ω(cm−1)=252.77+58.643x−50.108x2 for 0.325≤x≤0.55. A comparison of these results with previous infrared and Raman work on In1−xGaxAs has revealed that the concentration dependence of the optical phonon frequencies in the unstrained system is still not accurately known. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324698
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  • 10
    Electronic Resource
    Electronic Resource
    An annealing study of strain relaxation and dislocation generation in Si1−xGex/Si heteroepitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6292-6300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of interface misfit dislocations, and the accompanying strain relaxation, in a molecular-beam epitaxy grown 0.17 μm thick metastable Si0.82Ge0.18/Si(100) strained epilayer have been studied in detail as a function of rapid thermal annealing treatments over the 500–850 °C temperature range. Charge collection and transmission electron microscopy were used to determine the onset of relaxation by directly imaging misfit dislocations and to investigate the variation in dislocation density with increasing anneal temperature. The strain variation in the epilayer was carefully monitored using double-crystal x-ray diffraction and Raman spectroscopy, and the annealing induced changes in strain related to the electron microscopy observed density of interface misfit dislocations. The relative merit of each experimental technique is discussed in the light of these results. The generation of strain relieving dislocations was found to be an activated process, with an activation energy on the order of 1.5 eV for the Si0.82Ge0.18 epilayer. Preferential surface streaking, along one of 〈110〉 directions, was observed in the relaxed samples despite a nondirectional uniform network of interface misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345146
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