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  • 1
    Electronic Resource
    Electronic Resource
    Higher-order limiting laws of polyelectrolyte solutions (1978)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 82 (1978), S. 1979-1985 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100507a005
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  • 2
    Electronic Resource
    Electronic Resource
    Frequency dependence of the plasma density for helicon plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1463-1467 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations of plasma density are investigated as a function of frequency of rf power in a helicon plasma source. Abrupt, almost step-like changes in the plasma density are observed during the frequency scans under various conditions of the input rf power, the argon gas pressure, and the magnetic field. It is found that the transition frequencies shift to the lower value region as the input rf power and/or the argon gas pressure is increased, and to the higher value region as the magnetic field is increased. The observed density transitions are compared with semianalytical calculations based on the power balance relation and it has been shown that the results are in good agreement. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872325
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  • 3
    Electronic Resource
    Electronic Resource
    Dielectric properties of pulsed-laser deposited SrTiO3 films at microwave frequency ranges (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3592-3595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric constant and loss tangent of SrTiO3 thin films were characterized under the influence of an applied dc voltage at about 3.64 GHz. The measurement was carried out utilizing a gold resonator with a flip-chip capacitor at cryogenic temperatures. The analysis of the experimentally observed capacitance and quality factor served to give a measure of the dielectric constants and the loss tangents of the SrTiO3 film at microwave ranges, respectively. A dielectric constant of 830 and a low loss tangent of 6×10−3 at 3.64 GHz were observed at 90 K and 100 V. The dielectric loss decreases as the bias voltage increases. In addition, the quality of the SrTiO3 film is presented in terms of fractional frequency under the bias voltages and cryogenic temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287608
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3904-3909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300 °C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380 °C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge–Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380 °C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363347
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  • 5
    Electronic Resource
    Electronic Resource
    Prediction of solid-state amorphizing reaction using effective driving force (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 983-987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is proposed that the nucleation and growth of the amorphous phase through the solid-state amorphizing reaction in thin-film diffusion couples can be predicted by using the concept of effective driving force. The effective driving force consists of two factors: (i) the thermodynamic driving force given by maximum free-energy difference between the physical mixture of binary elements and the amorphous phase (ΔGmax), and (ii) the kinetic factor given by a ratio of the effective radius of the interstitial site in the host matrix to the atomic radius of the diffusing species (Rm/d). From the comparison of reported experimental results, it is shown that the criterion of effective driving force holds well for predicting the nucleation of the amorphous phase in metal/silicon systems as well as that of metal/metal systems. In addition, the concept of effective driving force holds well for predicting the growth tendency of the amorphous phase in metal/silicon systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360292
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  • 6
    Electronic Resource
    Electronic Resource
    Anisotropic transport and cation disorder in superconducting Tl2Ca2Ba2Cu3Ox single crystals (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 517-519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured for the first time the temperature-dependent anisotropic resistivity of several Tl2Ca2Ba2Cu3Ox single crystals. The resistivity ratio between the c axis and the a-b plane orientations in the best crystals is approximately 60 at room temperature. Resistivity data indicate substantial differences in both Tc and the transition width of nominal Tl2Ca2Ba2Cu3Ox plates grown from two different melt compositions. A Tl-O and CuO-rich flux yielded approximately stoichiometric plates with sharp transitions beginning near 113 K, while a Tl-O-rich flux produced plates containing more Tl and less Ba with broad transitions starting near 103 K. These data demonstrate the extreme sensitivity of the superconductivity to cation site disorder in the Tl-Ca-Ba-Cu-O system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104243
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  • 7
    Electronic Resource
    Electronic Resource
    Oxygen ion irradiation of Tl2Ca2Ba2Cu3O10 superconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 507-509 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting transport properties of polycrystalline Tl2Ca2Ba2Cu3O10 thin films irradiated with 740 keV oxygen ions were monitored as a function of fluence. Both the transition temperature (Tc ) and the critical current density (Jc ) decreased rapidly with fluence; however, the transition temperature onset remained constant. A fluence of 2×1014 O/cm2 (0.028 dpa) was sufficient to eliminate superconductivity in the films. Jc at 76 K decreased from 25 000 A/cm2 in the unirradiated sample to 2000 A/cm2 after a fluence of 2.1×1013 O/cm2. A room-temperature anneal caused both Tc and the normal-state resistivity to recover slightly after low-fluence irradiations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102431
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  • 8
    Electronic Resource
    Electronic Resource
    Sequential electron beam evaporated films of Tl2CaBa2Cu2Oy with zero resistance at 97 K (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 406-408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin unoriented polycrystalline films in the Tl-Ca-Ba-Cu-O system were prepared by sequential electron beam evaporation of multiple Tl, Ca, Ba, and Cu layers and a two-stage anneal under controlled Tl and oxygen overpressures. These films show zero resistance as high as 97 K and transport critical current densities at 76 K up to 110 000 A/cm2 with typical values of 50 000 A/cm2. The critical currents exhibit a modest magnetic field dependence. Meissner effect data show an onset at 110 K and a superconducting fraction of 75%. Compositional and structural studies indicate that the films, although polyphase, are predominantly Tl2Ca1Ba2Cu2Oy. There is no evidence of other superconducting phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100604
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  • 9
    Electronic Resource
    Electronic Resource
    Thermally stable, low-resistance PdGe-based ohmic contacts to high–low doped n-GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2465-2467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stable, low-resistance PdGe-based ohmic contacts to high–low doped n-GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400 °C under atmosphere ambient. X-ray diffraction results and Auger depth profiles show that the good PdGe-based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114609
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  • 10
    Electronic Resource
    Electronic Resource
    Rapid thermal processing of YBa2Cu3O7 spun wires (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6382-6388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal processing has been utilized to sinter and anneal phase-pure and CuO-rich YBa2Cu3O7 fibers and woven fibers formed by melt spinning a powder/polymer composite. The optimum temperature for sintering the powders varies for the stoichiometric (1025 °C) and 5% CuO-rich fibers (1000 °C), but in both cases the temperature window is extremely narrow (±25 °C). Typical processing consists of a rapid heating (250 °C/s) of the fibers to the sintering temperature in 1 atm of pure oxygen, holding at temperature for 1 s and cooling over a period of 2–3 min. The resulting fibers are orthorhombic YBa2Cu3O7 with large Meissner and shielding fractions, have zero resistance up to 92 K, critical-current densities in zero applied field to 1100 A/cm2 at 76 K, and show clean grain boundaries by transmission electron microscopy. Despite the short processing times, microstructural analysis shows considerable grain growth and evidence of metastable congruent melting of oxygen-rich YBa2Cu3O7.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345160
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