Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 556-557 (Sept. 2007), p. 1017-1022
ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Recent work on the thermal and electrical challenges in realizing AlGaN/GaN microwaveheterojunction field effect transistors grown on SiC substrates is discussed. Raman thermographyhas been used to directly measure the self-heating induced lattice temperature rise with dramaticallyimproved resolution and accuracy compared to traditional infrared techniques. It is demonstratedthat defects in the SiC substrate can influence the temperature distribution within the active devicewith potential consequences for reliability. Microwave devices require an insulating GaN substratematerial for device isolation. It is shown that the net deep level acceptor concentration has to beaccurately controlled to suppress short-channel effects and to achieve radio frequency powerefficient operation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.1017.pdf
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