ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Magnetotransport in doped manganate perovskites (invited) (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5343-5343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent progress in oxide perovskite thin-film technology has led to the discovery of a large negative magnetoresistance at room temperature in the doped manganate perovskite thin films. For applications such as magnetic-field sensing, the saturation magnetic field for large magnetoresistance has to be significantly lowered. The magnetic and transport properties of the doped manganates involve a curious magnetic-field scale, on the order of 1–10 T. Upon the application of a field on this scale, the magnetoresistance saturates, and a significant broadening of the temperature-dependent magnetization is seen. An understanding of the materials physics that underlie such behavior can point to new ways of lowering the saturation field in this class of materials. We argue that this characteristic field is suggestive of an inhomogeneous magnetic state in the system. We will discuss the basic phenomena and physics of magnetotransport in this class of materials. We will also report the successful fabrication of a trilayer thin-film pillar structure made using the doped manganate perovskites in which a magnetoresistance change by about a factor of 2 was observed at temperatures below 100 K in a field less than 200 Oe, proving that large magnetoresistance in low field can be obtained in these materials. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364539
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Anisotropy of magnetic vortex pinning in high-Tc superconductors (invited) (abstract) : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6195-6195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is no consensus as to the nature of the "irreversibility line'' or the dynamic depinning transition boundary in H-T plane. The angle-resolved ac χ measurements allow us to probe the anisotropy of this boundary. We review remarkable new observations in single crystals of YBaCuO: one is the splitting of the loss peak in the out-of-phase ac susceptibility as a function of tilt angle between magnetic field and crystal axis, suggesting that vortices conform to the layered structure to form a modulated "staircase'' shape. Another is the observation of a new irreversibility collapse transition in H-T plane at low fields near Tc. The new regime may indicate a separate boundary in the magnetic phase diagram, below which the pinning barriers are thermally renormalized so that pinning is significantly reduced or negligible. We discuss these observations in the context of intrinsic pinning and collective effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349991
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5625-5629 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH4 reduction of WF6 are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 °C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346974
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Transport and magnetic properties of in situ grown thin-film La–Y–Ca–Mn–O (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2726-2728 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a large magnetoresistance in in situ grown La0.60Y0.07Ca0.33MnOx thin films made at a low substrate temperature of 600 °C without postdeposition annealing. The zero-field resistivity peaks around 120 K. The resistivity peak is reduced by two orders of magnitude by a 6 T field. Comparison of transport and magnetization data reveals a correlation of conductivity versus magnetization below the ferromagnetic transition temperature, which may suggest a double-exchange-based conduction mechanism. Above the ferromagnetic transition at low fields, a quadratic dependence of conductivity on magnetization is found, consistent with a spin-scattering-limited conductivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114306
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electrical transport in thin films of copper silicide (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3382-3384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of thin films of η'-Cu3Si phase with a tetragonal crystal structure are reported on. Electrical transport in these films is found to be very sensitive to oxygen exposure. Cu3Si reacts with oxygen at room temperature to form both Si and Cu oxides, resulting in high-room-temperature (∼60 μΩ cm) and even nonmetallic resistivity. This behavior is contrasted with that of low-resistivity (∼5 μΩ cm at room temperature) Cu3Ge, which is inert in an oxygen environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349280
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    New mechanisms for irreversibility in high-Tc superconductors (invited) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4670-4675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the zero-field cooled (ZFC), field-cooled (FC), and remanent (rem) magnetization of YBaCuO crystals in the context of an extended Bean critical-state model. We introduce a novel way to include the reversible magnetization in this theory and show how this can explain the concave-downwards shape of the ZFC magnetization near Tc. We explain the persistence of remanence in a temperature range where FC and ZFC magnetizations merge in terms of a residual irreversibility arising from a step in the reversible B(H) curve. We also introduce the concept of a flux-trapping depth which helps explain the field dependence of the Meissner effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344822
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Low-field susceptibility of GdAl spin glass: Cooling-rate dependence and field dependence of peak temperature (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3389-3391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use SQUID magnetometry to extend dc susceptibility measurements on GdAl spin glasses to 10 mOe, two orders of magnitude lower than previously reported. We confirm that if the temperature is lowered too quickly, a nonequilibrium susceptibility may be observed, but for sufficiently slow cooling, an equilibrium, erogodic susceptibility may be determined down to a few degrees below the susceptibility peak. The field dependence of this peak is incompatible with a T=0 phase transition model but supports a finite temperature-phase transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335105
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Unusually low resistivity of copper germanide thin films formed at low temperatures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1341-1343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200 °C. At these low temperatures, the ε-Cu3Ge phase with a monoclinic crystal structure is formed, with room-temperature resistivity which can be as low as 5.5 μΩ cm. The films are electrically stable up to at least 600 °C, and, unlike pure copper, are also stable against oxygen and air exposure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104304
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Novel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1672-1674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes a novel structure for very large scale integrated contact and interconnect technology that involves selective deposition of W on self-aligned TiN/TiSi2. The TiN layer serves to protect reaction between WF6 and TiSi2 and underlying Si during W deposition as well as to promote adhesion of W layer and minimize contact resistance. The selective deposition of W on TiN, very difficult with conventional hydrogen reduction process, is accomplished by employing a recently developed silane reduction process. The structure prevents silicon consumption leading to the encroachment commonly found in tungsten deposited directly on silicon in very shallow junctions. It is demonstrated that such a structure results in low contact resistance and junction leakages and is applicable to subhalf-micron devices. Tungsten with low resistivity of 8–9 μΩ cm can be achieved at room temperature with the resulting drop by a factor of 3–4 at liquid-nitrogen temperature making the structure more attractive for low-temperature application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101300
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Scanning magnetoresistance microscopy of La0.67Sr0.33MnO3 films : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7061-7063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a magnetic imaging scheme using the magnetoresistive spin valve head in a dc bias mode as a sensing element. By scanning the head in contact with the sample we obtain a submicron spatial resolution map of the normal component of the magnetic field in the temperature range 4.2–300 K. The writing element of the sensor can be used to alter the local magnetic structure in a controlled way. This technique was applied to image the magnetic domain structure down to 77 K in patterned thin films of La0.67Sr0.33MnO3, known for their colossal magnetoresistance. A reorientation of single or multiple domains in the films was accomplished by applying a local magnetic field with the writing element, while the effect on magnetotransport was monitored with the simultaneous measurement of current–voltage characteristics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367640
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...