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  • 1
    Electronic Resource
    Electronic Resource
    Interface roughness of InAs/AlSb superlattices investigated by x-ray scattering (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 120-124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/AlSb short period superlattices grown either with AlAs-like or with InSb-like interfaces are investigated by grazing incidence x-ray scattering and high resolution diffractometry. The superlattices are grown on a relaxed AlSb buffer layer. It is shown that the two possible stackings of layers in the superlattices resulting in a different degree of lattice relaxation lead also to a different height of interface roughness. The lateral and vertical correlation lengths of the roughness decrease with increasing relaxation of the superlattice. The vertical correlation length corresponds to an almost complete correlation of different interfaces in the case of the nearly perfect superlattice with InSb-like interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360918
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 811-820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of five short-period (InAs)6/(AlSb)6 superlattices, grown either with AlAs-like, InSb-like, or alternating interfaces, were studied by means of x-ray diffraction, high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, photoluminescence and ellipsometry. The combination of these techniques allows us to explain the pronounced differences in the optical and structural properties of both types of interfaces. In samples with an AlAs-like bottom interface x-ray, HRTEM and Raman results demonstrate the differing structural quality to be related to inhomogeneous strain relaxation and As intermixing. The energies of the critical points E0, E1 and E1+Δ1 of the samples with pure AlAs-like interfaces are shifted by more than 100 meV to higher energies with respect to those of the samples with InSb-like interfaces. These differences can be understood on the basis of the different interfacial atomic structure and strain in the samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359004
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  • 3
    Electronic Resource
    Electronic Resource
    Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: Strong effect of the superlattice period (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6810-6814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In heavily dislocated material (dislocation density of mid-107 cm−2), the low-temperature cathodoluminescence intensity of a sufficiently short-period superlattice comes remarkably close to that of comparison structures grown on low-dislocation material. We attribute this effect to a redistribution of the recombination-active sites along the dislocation cores taking place in the material. The driving force of such redistribution may be electrical or chemical in nature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341994
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  • 4
    Electronic Resource
    Electronic Resource
    Raman scattering in a Ga1−xInxP strained heterostructure (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 787-792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering was employed to study the optical phonon modes in Ga1−x Inx P heterostructures. The stress calculated from the pressure coefficient and the observed frequency shift for the GaP-like LO phonon is larger than the one obtained from the lattice mismatch given by the elastic theory; the possibility of other types of defects responsible for this difference is considered. The presence of internal stress in epitaxial layers could induce a switchover from one- to two-mode behavior. The modified random element isodisplacement model is used to explore this possibility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343498
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  • 5
    Electronic Resource
    Electronic Resource
    Rotational slip in III-V heterostructures grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2746-2748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of rotational slip as a mechanism for relieving strain in Ga1−xInxAs/GaAs and GaAs/Si heterostructures grown by molecular-beam epitaxy. Rotational slip causes a tilt of the epitaxial layer with respect to the substrate. With increasing layer thickness it is accompanied by misfit dislocations and crazing on the surface of the layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342496
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by C-V profiling (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 643-649 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valence and conduction band discontinuities for the lattice matched (Ga,In)P/GaAs heterojunction have been determined by capacitance-voltage (C-V) profiling. Both p-p and n-n heterojunctions were profiled, in order to obtain separate and independent values for both the valence-band-edge discontinuity (ΔEv) and the conduction-band discontinuity (ΔEc). The band lineup is found to be of the straddling type with the valence- and conduction-band discontinuities 0.24 and 0.22 eV, respectively, with an estimated accuracy of ±10 meV. Computer reconstruction of the C-V profiles was used to check the consistency of the data. The band offset data indicate that the (Ga,In)P/(Al,Ga)As system should be staggered for a certain range of Al compositions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338931
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  • 7
    Electronic Resource
    Electronic Resource
    In situ YBa2Cu3O7−x superconductor films on GaAs/AlAs superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5108-5110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x films have been deposited in situ onto III-V superlattice substrates. The substrates were GaAs/AlAs superlattices grown by molecular beam epitaxy onto GaAs substrates. For 5000-A(ring) -thick YBCO films grown at 615 °C substrate temperature, we have obtained Tc of 73 K. For thinner films the Tc's are lower, indicating poor interfaces. However, the onset of the superconducting transition is 90 K in all cases. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM) show these films to be polycrystalline. TEM shows an interaction layer of about 1000 A(ring) at the interface. Low-temperature cathodoluminescence measurements of the substrate show that atomic interdiffusion has intruded at least 5000 A(ring) below the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349020
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  • 8
    Electronic Resource
    Electronic Resource
    Raman scattering study of InAs/GaInSb strained layer superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5608-5614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a Raman scattering study of the InAs/GaInSb superlattice. This new superlattice is promising as a long wavelength infrared detector material. The samples were grown by molecular beam epitaxy and their structural parameters were determined by Rutherford backscattering and x-ray diffraction. Samples were grown on [001] GaAs substrates with GaSb buffers, and directly on [001] GaSb substrates. Cross-sectional transmission electron micrographs show that for the samples grown on GaAs substrates, a high density of dislocations was generated at the GaAs-GaSb interface, and many of these dislocations thread through the superlattice. The samples grown directly on GaSb had a much lower dislocation density. The Raman spectra of the InAs/GaInSb superlattice shows a single peak, which is a superposition of scattering from the LO phonons in InAs and in GaInSb. For unstrained InAs and GaInSb, the LO phonon energies are sufficiently separated that they would be well resolved in Raman scattering. However, the strain introduced into these materials by the pseudomorphic boundary conditions moves the two phonons closer together energetically so that only one peak is seen in the Raman spectrum of the superlattice. A high energy Raman scattering tail is seen in some of the samples. This tail is from Ga-As local modes. Such modes may be due to As incorporation in the GaInSb, Ga incorporation in the InAs or phase mixing at the interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350174
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  • 9
    Electronic Resource
    Electronic Resource
    Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained-layer superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 684-686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear optical properties of a new class of strained-layer superlattices (intrinsic Stark effect superlattices) have been investigated. Specifically, we have compared the nonlinear transmission of Ga1−xInxAs-GaAs strained-layer superlattices grown along the (211) axis to identical superlattices grown along the (100) axis, and found that the optical nonlinearity in the (211) sample is about one order of magnitude greater than in the (100) sample. A blue shift of the exciton resonance and an increase in the exciton absorption strength in the (211) sample with increasing light intensity was observed (attributed to screening of the intrinsic Stark effect fields by photogenerated carriers), resulting in the stronger optical nonlinearity. The maximum of the nonlinear absorption index, ||α2||, in the (211) sample was 54 cm/W (||Im χ3||=0.33 esu) whereas in the (100) sample the maximum of ||α2|| was 6.9 cm/W (||Im χ3||=0.042 esu). The measured carrier recovery time in both samples was 2 ns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104568
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  • 10
    Electronic Resource
    Electronic Resource
    Step-flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1751-1753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the molecular beam epitaxial growth of (Al,Ga)Sb tilted superlattices (TSLs) on 2° vicinal (100) GaSb and GaAs substrates. The TSLs grown on GaSb substrates exhibit good AlSb/GaSb separation and a uniform short-range superlattice period. The TSLs grown on GaAs substrates are similar, except for the presence of threading dislocations and a decreased uniformity. The existence of TSLs proves that step-flow growth can occur in this material system, and in the presence of strain. Lateral fluctuations in the tilt angle of the superlattice are observed and are found to be caused by a nonuniform adatom distribution which is correlated with the surface step density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104056
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