Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 3469-3471
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
p-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 °C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kΩ. The current-voltage characteristics were measured between room temperature and 270 °C. The extracted ideality factors increase with temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339291
Permalink
|
Location |
Call Number |
Expected |
Availability |