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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4464-4466 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and 9.12×10−3 Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 529-535 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection of modified Korteweg–de Vries solitons from the sheath in front of a negatively biased metal disk is experimentally investigated in a negative ion plasma. Both rarefactive and compressive solitons are reflected and the polarity of the reflected solitons is the same as that of the incident solitons. The points of reflection for the rarefactive and compressive solitons are at different locations. As the magnitude of the negative bias potential that is applied to the reflector is increased, the two reflection points move away from the reflector. An interpretation in terms of the sheath characteristics is presented. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 1073-1076 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The expansion of a plasma consisting of positive ions, negative ions, and electrons into a vacuum is solved numerically. In addition to the expected self-similar expansion found in a quasineutral plasma expansion model, a burst of positive ions is accelerated into the vacuum and a burst of negative ions is accelerated into the plasma. These accelerated ions arise since quasineutrality is not imposed in the simulation. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3783-3787 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion wake fields are excited and investigated in quasineutral two component plasmas in a standard double plasma machine. The period of the oscillating wake field decreases as the plasma density increases. The wake field amplitude depended upon the resonance between the perturbation duration and the wake field period rather than the perturbation amplitude. The experimental results are in agreement with the theoretical model that we have recently proposed. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3674-3678 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal variation of the energy of positive ions deposited in metal electrodes inserted in a plasma to which a negative voltage step is applied is computed. Effects of impurity positive or negative ions upon the plasma source ion implantation process are calculated. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4427-4431 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical parameters for the development of the plasma-source ion implantation process are the ion implantation current and the sheath expansion characteristics. Recently, Xia and Chan [J. Appl. Phys. 73, 3651 (1993)] have investigated these parameters for small spherical electrodes inserted in a two component positive ion-electron plasma. This investigation is extended to a plasma that consists of three components: positive ions, negative ions, and electrons.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4591-4593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sulfur passivation of an n-GaN surface was investigated by employing an aqueous (NH4)2S solution and (NH4)2S+t-C4H9OH solution. Photoluminescence and Auger electron spectroscopy revealed that treatment with (NH4)2S+t-C4H9OH results in a more effective passivation of the n-GaN surface than that with (NH4)2S due to a higher chemical reactivity of sulfur species in the former solution. The (NH4)2S+t-C4H9OH-treated sample shows a stronger photoluminescence intensity by a factor of 2.5 with respect to an untreated sample. In addition, improved Ohmic characteristics of the sample are evident from current–voltage measurements. This result can be attributed to the effective removal of an insulating layer on the n-GaN surface. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3079-3081 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mg-doped GaN films, grown by metalorganic chemical vapor deposition, were treated with a nitrogen plasma after a conventional rapid thermal annealing (RTA). The conductivity of the p-type GaN film was greatly enhanced by nitrogen plasma treatment, and exhibited a higher sheet hole concentration as well as lower sheet resistance than the RTA samples. A photoluminescence (PL) band which peaked at 3.27 eV was new, and a band at 2.95 eV was markedly attenuated in the plasma treated samples. PL measurements suggest that self-compensation in a Mg-doped GaN caused by the nitrogen vacancies is effectively reduced by the nitrogen plasma treatment, leading to an enhanced p-type conductivity. In addition, the plasma-treated sample revealed a drastic reduction in specific contact resistance by three orders of magnitude, compared with the RTA samples. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1766-1768 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of the sulfur treatment of multiple-quantum-well (MQW) light-emitting diodes (LEDs) with (NH4)2S and (NH4)2S+t-C4H9OH solutions prior to the deposition of a light-transmitting p-electrode metal are presented. The room-temperature I–V curves showed that the forward voltages of MQW LEDs treated with the two sulfur solutions decrease by 0.12 and 0.35 V at 20 mA, respectively, compared to the untreated MQW LED, as the result of an improvement in p-Ohmic contact characteristics. The relative light-output power and external quantum efficiency of MQW LEDs increased by a factor of 1.28 for the (NH4)2S treated sample and 2.23 for the (NH4)2S+t-C4H9OH treated sample compared to the untreated sample. In addition, the reverse leakage current characteristic of MQW LEDs was reduced as a result of sulfur treatment. This can be attributed to the passivation of surface and sidewall damages formed after the dry-etching process for a reliable pattern transfer. The present results indicate that the sulfur treatment greatly improves the electrical and optical performance of MQW LEDs. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 7114-7120 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A theoretical description of the molecular polarizability (α) and first and second hyperpolarizabilities (β and γ) of a guanidinium-type octupolar molecule is presented. By using a valence bond and three charge-transfer states with nonzero transfer integrals, the electronic states are obtained as linear combinations of these basis states. It is found that a doubly degenerate excited state is only optically coupled to the ground state. Based on the analytic expressions for α, β, and γ obtained, it is shown that the resultant tensor elements of β satisfy the symmetry requirements of point group D3h. Unlike the linear push–pull polyenes, the magnitudes of α, β, and γ of the guanidinium-type octupolar molecules increase as the charge-transfer character of the electronic ground state increases. Also, their dependences on the distance (d) between the donor and acceptor are briefly discussed. © 1998 American Institute of Physics.
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