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  • 1
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    A lectin-based diagnostic system using circulating antibodies to detect cervical intraepithelial neoplasia and cervical cancer (2015)
    Oxford University Press
    Details
    Publication Date: 2015-12-09
    Description: In the present study, we developed serological strategies using immunoglobulin fractions obtained by protein A chromatography to screen for cervical cancer and cervical intraepithelial neoplasia I (CIN I). The reactivities of the immunoglobulins purified from sera of women with normal cytology, CIN I and cervical cancer were compared in enzyme-linked immunosorbent assays (ELISA) and enzyme-linked lectin assays (ELLAs). To capture the immunoglobulins, ELISAs and ELLAs were performed in protein A immobilized microplates. The reactivity of immunoglobulin in ELISA was in the increasing order normal cytology, CIN I and cervical cancer, while that in ELLAs for detecting fucosylation was in the decreasing order normal cytology, CIN I and cervical cancer. It was confirmed that women with CIN I were distinguishable from women with normal cytology or women with cervical cancer in the ELISA or the ELLA for detecting fucosylation with considerable sensitivity and specificity. Women with cervical cancer were also distinguishable from women with normal cytology with high sensitivity (ELISA: 97%, ELLA: 87%) and specificity (ELISA: 69%, ELLA: 72%). Moreover, the logistic regression model of the ELISA and the ELLA discriminated cervical cancer from normal cytology with 93% sensitivity and 93% specificity. These results indicate that the ELISAs and the ELLAs have great potential as strategies for primary screening of cervical cancer and CIN. It is expected that the ELISA and the ELLA can provide new insights to understand systemic changes of serum immunoglobulins during cervical cancer progression.
    Print ISSN: 0959-6658
    Electronic ISSN: 1460-2423
    Topics: Biology , Medicine
    Published by Oxford University Press
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  • 2
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    PPARδ inhibits IL-1β-stimulated proliferation and migration of vascular smooth muscle cells via up-regulation of IL-1Ra (2010)
    Springer
    Details
    Publication Date: 2010-03-10
    Print ISSN: 1420-682X
    Electronic ISSN: 1420-9071
    Topics: Biology , Medicine
    Published by Springer
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur-treated InP investigated by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4052-4057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363366
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  • 4
    Electronic Resource
    Electronic Resource
    Soft magnetic properties of nanocrystalline Fe-Hf-C-N films : 38th Annual Confrerence on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5785-5787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-Hf-C-N films with excellent soft magnetic properties were fabricated by Ar+N2 reactive sputtering for the first time. The newly developed films were found to have better soft magnetic properties than those of Fe-Hf-C or Fe-Hf-N films. The best magnetic properties achieved in this work are Hc of 0.15 Oe, μeff of 8200, and 4πMs of 17 kG. The thermal stability of the Fe-Hf-C-N films was also found to be excellent, e.g., Hc was less than 0.3 Oe and μeff was about 4000 for the films annealed up to 700 °C. It was observed by transmission electron microscopy that the films consisted of two phases: a fine crystalline α-Fe phase whose grain size is about 6 nm, and Hf(C,N) precipitates with a size of less than 2 nm. The fine grained α-Fe structures, together with finely dispersed Hf(C,N) precipitates, is considered to be one of the main factors for the excellent magnetic properties and thermal stability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355562
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  • 5
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of SiF/BF2 implanted and annealed (100)Si: Amorphization and residual effects (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7549-7554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of amorphous layers and residual defects in SiF+/BF2+ implanted and annealed (100)Si was investigated on an atomic level by using a high-resolution transmission electron microscope. Amorphous layers, of which depths were about 70% of those of amorphous layers formed by Si+ preamorphization at the same implantation energies, could be formed by SiF+ preamorphization. Two distinct layers of defects were formed in SiF+/BF2+ implanted wafers annealed at 600 °C for 1 h and then rapidly thermally annealed at 950 °C for 30 s. One layer, observed near the surface regions, consisted of intrinsic stacking faults bounded by 30° Shockley partial dislocations, twins, amorphous regions, and fine clusters. The other layer, observed near the original amorphous/crystalline interface, consisted of Frank partial dislocations of which Burgers vector is 1/3a〈111〉 and 60° perfect dislocations of which Burgers vector is 1/2a〈110〉. These defects were formed by retarding growth rate by fluorine atoms; outdiffusion of fluorine atoms; lattice misorientation between the substrate and crystalline pockets; and the introduction of an extra half- plane during the preamorphization process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362410
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  • 6
    Electronic Resource
    Electronic Resource
    Interlayer coupling field in spin valves with CoFe/Ru/CoFe/FeMn synthetic antiferromagnets (invited) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7612-7615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (P1−P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As the free layer thickness decreased from 70 to 20 Å, the interlayer coupling field was increased due to the magnetostatic coupling (orange peel coupling). In the case of the thickness difference in the pinned layers, the interlayer coupling field agreed with the modified Néel model suggested in the top synthetic spin valve structures. However, in the case of tP1=tP2, and tP1=tP2+5 Å, it was found that the interlayer coupling field could not be explained by the modified Néel model. The deviation of the modified Néel model at the dip zone could be due to the large canting of the pinned layers, which depend on applied field and different thickness in synthetic antiferromagnetic structure. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of the interlayer coupling field was obtained when the Cu thickness is 32 Å. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361056
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  • 7
    Electronic Resource
    Electronic Resource
    Development of a high-current microwave ion source for Korean Multipurposed Accelerator (abstract) : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1015-1015 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-current, proton linear accelerator, named as Korean multipurposed accelerator (KOMAC), is being proposed mainly for accelerator-driven transmutation technology (ADTT) by Korea Atomic Energy Research Institute (KAERI). High-current, low emittance continuous power (cw) linear accelerators favor electron cyclotron resonance (ECR) microwave ion sources as an injector (Ref. 〈citeref RID="R1" STYLE="ONLINE"〉1). Recently, these microwave sources are developed and constructed by several institutes especially for high-current cw linear accelerators. A high-density microwave ion source has been designed and constructed as a prototype ion source for the proposed KOMAC linear accelerator. The design of microwave power injection system is similar to that of the 75 keV proton injector at Los Alamos National Laboratory (Ref. 〈citeref RID="R2" STYLE="ONLINE"〉2). A 2.45 GHz, 1.5 kW magnetron source is introduced into the stainless steel plasma chamber with 10 cm diam and 20 cm length through a tapered, double-ridged waveguide and a quartz window. The microwave power supply is separated from the plasma chamber by a high-voltage waveguide break. Axial magnetic fields up to 1 kG can be provided by two sets of water-cooled solenoid coils. A single-hole extraction system is designed for extraction current up to 50 mA at 50 kV extraction voltage. The design and initial operations of the ion source in ECR regimes will be presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148744
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced positive magnetoresistance effect in GaAs with nanoscale magnetic clusters (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3004-3006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The enhanced positive magnetoresistance effect has been observed in GaAs containing nanoscale magnetic clusters. The ferromagnetic metallic clusters were embedded into GaAs by Mn ion implantation and rapid thermal annealing. Positive magnetoresistance in these structures has been observed and attributed to the enhanced geometric magnetoresistance effect in inhomogeneous semiconductors with metallic inclusions. The additional enhancement of positive magnetoresistance under light illumination is due to the higher mobility of photoexcited electrons in comparison with the mobility of holes in p-type GaAs prepared by Mn ion implantation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394156
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic properties of as-deposited Fe–Al–O alloy films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6262-6264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and structural properties of as-sputtered nanocrystalline Fe–Al–O films, fabricated by a magnetron sputtering apparatus, are investigated as a function of the sputtering input power and the contents of Al and oxygen. A nanocrystalline Fe88.5Al3.5O8.0 film is found to have 4πMs of 18.2 kG, Hc of 0.6 Oe, μeff of 4600 up to 100 MHz. These excellent soft magnetic properties and high frequency characteristics result from nanocrystalline structure, high electrical resistivity, and moderate anisotropy field. These values are sufficient to apply to a high-density recording head. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372673
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  • 10
    Electronic Resource
    Electronic Resource
    Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2897-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the Si/(Si+C) ratio in the reaction gas stream on the growth and properties of monocrystalline β-SiC films grown on Si(100) substrates via chemical vapor deposition have been theoretically and experimentally studied. The amounts of condensed phases of β-SiC and Si, and the partial pressures of the remaining Si and C-containing gases as a function of the Si/(Si+C) ratio in the source gases have been initially obtained from thermodynamic calculations using the "solgasmix-pv'' computer program. Complementary and comparative experimental growth studies have shown that inclusion-free films having maximum values in growth rate and carrier concentration and a minimum value of resistivity were obtained near Si/(Si+C)=0.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337075
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