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  • 1
    Electronic Resource
    Electronic Resource
    Nb-added high-coercivity Nd-Fe-B melt-spun ribbon with high remanence : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6477-6479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of composition and additives on the microstructures and magnetic properties of Nd-Fe-B melt-spun ribbons were studied. Experimental results have revealed that homogeneous grain structure with fine grain size was obtained on composition close to 2-14-1 stoichiometry with additives. It was also found that Nb was very effective in increasing both remanence and coercivity in a Nd-Fe-B melt-spun ribbon. A high-energy product of 151.2 kJ/m3 (19.0 MGOe) was obtained from an isotropic (Nd0.5Pr0.5)12Fe72Co8B6Nb2 melt-spun ribbon with a remanence of 0.926 T and a coercivity exceeding 1200 kA/m (∼15 kOe).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349905
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  • 2
    Electronic Resource
    Electronic Resource
    Relaxation dynamics of nonequilibrium electron-phonon gases in a polar semiconductor (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7853-7858 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermalization of nonequilibrium electrons and phonons is investigated theoretically within the framework of a semiclassical description of the Boltzmann equation. The electrons are assumed to be excited in the intraband absorption in a polar semiconductor and subsequently undergo a Fröhlich interaction to generate hot phonons. The coupled nonlinear Boltzmann equations for the electron-phonon system are directly solved numerically utilizing a discretization scheme. Consequently, a detailed analysis is given of the relaxation dynamics of the distribution functions and the decay of the hot electron and phonon temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373466
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: The diffraction of waves by a penetrable ribbon [J. Math. Phys. 4, 65 (1963)] (1988)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 29 (1988), S. 721-722 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528013
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5642-5646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells were investigated by using photoluminescence, transmission electron microscopy, optical microscopy, and high resolution x-ray diffraction. The InxGa1−xN/GaN (x〉0.2) quantum wells used in this study were grown on c-plane sapphire by using metalorganic chemical vapor deposition. The interruption was carried out by closing the group-III metalorganic sources before and after the growths of the InGaN quantum well layers. The transmission electron microscopy images show that with increasing interruption time, the quantum-dot-like regions and well thickness decreased due to indium reevaporation or the thermal etching effect. As a result the photoluminescence peak position was blueshifted and the intensity was reduced. Temperature- and excitation-power-dependent photoluminescence spectra support the results of transmission electron microscopy measurements. The sizes and the number of V defects did not differ with the interruption time. The interruption time is not directly related to the formation of defects. The V defect originates at threading dislocations and inversion domain boundaries due to higher misfit strain. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410320
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  • 5
    Electronic Resource
    Electronic Resource
    Crystallographic and magnetic properties of NdFe10.7TiM0.3(M=B, Ti) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5516-5518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NdFe10.7TiM0.3(M=B, Ti) has been studied with x-ray diffraction, Mössbauer spectroscopy, and a vibrating sample magnetometer. The alloys were prepared by arc-melting under an argon atmosphere. The NdFe10.7TiB0.3 exhibits a pure single phase, whereas the NdFe10.7Ti1.3 contains some α-Fe, from x-ray and Mössbauer measurements. The NdFe10.7TiB0.3 has the ThMn12-type tetragonal structure with a0=8.587 A(ring) and c0=4.788 A(ring). The Curie temperature (TC) is 570 K from Mössbauer spectroscopy performed at various temperatures ranging from 13 to 770 K. Each spectrum below TC was fitted with five subspectra of Fe sites in the structure (8i1, 8i2, 8j1, 8j2, and 8f ). The area fraction of the subspectra at room temperature are 16.4%, 8.2%, 14.8%, 21.3%, and 39.3%, respectively. Magnetic hyperfine fields for the Fe sites decrease on the order of Hhf(8i)(approximately-greater-than)Hhf(8j)(approximately-greater-than)Hhf(8f ). The average hyperfine field Hhf(T) of the NdFe10.7TiB0.3 shows a temperature dependence of [Hhf(T)−Hhf(O)]/Hhf(O)=−0.39(T/TC)3/2 & −0.17(T/TC)5/2 for T/TC〈0.7, indicative of spin-wave excitation. Annealing the alloy at around TC for 60 min resulted in a two phase microstructure consisting of a ThMn12-type structure and α-Fe. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361851
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  • 6
    Electronic Resource
    Electronic Resource
    Nanocrystalline Nd12Fe80B6Nb1Ga1 melt-spun ribbon with textured surface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4756-4758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Nd-Fe-B melt-spun ribbon, Ga addition is found to be effective for the orientation of c axis of 2-14-1 grains normal to the ribbon plane even at high wheel surface velocity. A Nd12Fe80B6Nb1Ga1 melt-spun ribbon quenched with optimum wheel surface velocity was found to have textured structure on the free-side surface. Furthermore, this melt-spun ribbon was composed of fine grains of about 30 nm in size which is believed to be enough to provoke intergrain exchange interaction. The remanence and energy product of the field aligned powder of this melt-spun ribbon was about 7% and 20% higher than those of the not-aligned powder, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355904
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  • 7
    Electronic Resource
    Electronic Resource
    Thermomagnetic analysis of NdFeB melt-spun alloys with low Nd content (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4133-4135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transformation of NdFeB melt-spun alloys with low Nd content of 4–8 at. % was investigated by thermomagnetic analysis and x-ray diffractometry. Experimental results have shown that the metastable Nd2Fe23B3 compound formed in the alloys is considered to be transformed to Nd2Fe23B3+α-Fe+Fe3B in the temperature range of 550–690 °C, α-Fe+Fe3B+Nd1+eFe4B4 in the temperature range of 690–730 °C and finally α-Fe+Nd1+eFe4B4 above 840 °C. From the results, it has been concluded that Nd2Fe14B is not formed from metastable Nd2Fe23B3. On the other hand, the melt-spun alloy of Nd2Fe23B3 (∼Nd7.1Fe82.1B10.7) annealed under optimum conditions has been found to be composed of α-Fe, Fe3B, and Nd2Fe14B phases. The alloy has a coercivity comparable to Fe3B-based Nd4Fe77B19 and relatively high-energy product of about 71.6 kJ/m3 (∼9 MG Oe). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359501
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  • 8
    Electronic Resource
    Electronic Resource
    Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3257-3259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the ZnSe/GaAs heterostructure, the problems of interdiffusion and thermal stability are very crucial. We have investigated the effects of annealing on ZnSe grown on GaAs by photoluminescence and double-crystal x-ray measurement. In order to investigate annealing effects of the ZnSe/GaAs heterostructure, we used 1.0-μm-thick and 0.2-μm-thick samples. Samples were annealed in the temperature range of 200–500 °C in an N2 ambient for 3 min using a face-to-face configuration with ZnSe epitaxial layer as a cap layer. In the annealing temperature above 450 °C, new emission peaks appeared in the range of 2.62–2.72 eV. The biaxial compressive strain due to lattice mismatch at the growth temperature is mostly relaxed at 400 °C, and the epilayer annealed at 500 °C has a biaxial tensile strain. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120307
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of slip direction on the photoplastic effect in cadmium sulfide (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 335-336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of the photoplastic behavior of CdS single crystals show that when slip occurs on the basal plane, a large increase in flow stress is observed in the presence of incident light. However, when the crystal is oriented for slip on the prismatic planes, a very small photoplastic effect is observed. Measurements of the current associated with dislocation motion on the active slip systems indicate that the photoplastic effect is proportional to the charge on the dislocations in the respective slip planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102800
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  • 10
    Electronic Resource
    Electronic Resource
    Origin of crystallographic tilt in InGaAs/GaAs(001) heterostructure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray rocking curve measurements showed a significant crystallographic tilt in relaxed InGaAs layer grown on (001) GaAs. Transmission electron microscopy revealed that the origin of tilt is 60° dislocations generated having Burgers vectors of a same vertical edge component. Calculations using anisotropic elasticity show that this configuration of 60° dislocation array is energetically favorable when the tilt of epilayer is present as to remove the long range stress field induced by the vertical edge components at the interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115188
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