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  • 1
    Electronic Resource
    Electronic Resource
    Micromachined infrared sensors using tunneling displacement transducers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 112-128 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Uncooled infrared sensors are important for a number of technological and scientific measurements. We have designed, built, and tested a new uncooled infrared sensor which is made by silicon micromachining. This infrared sensor uses a tunneling displacement transducer to detect the thermal expansion of a small volume of trapped gas. Prototype devices based on this design have been operated with NEP better than 3×10−10 W/(square root of)Hz at 25 Hz, which is competitive with the best comparably sized uncooled sensors available. This article will describe the design, fabrication, and operation of all elements of this sensor. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146559
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  • 2
    Electronic Resource
    Electronic Resource
    ac calorimeter for measurements of adsorbed gases on metal films at 4He temperatures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 822-829 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An analysis is presented of the performance of an ideal ac calorimeter limited only by thermodynamic noise. A calorimeter based on this analysis is described which is designed for studies of the heat capacity of monolayers and multilayers of atoms and molecules adsorbed on a variety of surfaces. The calorimeter consists of Ge:Ga thermometers and NiCr heaters mounted on one side of a sapphire substrate, with an evaporated film deposited on the other side. The calorimeter is mounted on a 4He cold finger in a UHV system allowing heat capacity measurements down to 1.6 K. In order to verify the performance of the calorimeter, measurements have been made of the heat capacity of 25-μg samples of indium, and of submonolayer coverages of 4He on sapphire. The measured sensitivity corresponds to 〈10−2 monolayers of 4He adsorbed on the surface of the calorimeter in the gas phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141501
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  • 3
    Electronic Resource
    Electronic Resource
    Micromachined silicon tunnel sensor for motion detection (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 100-102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the extreme sensitivity of electron tunneling to variations in electrode separation to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104432
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  • 4
    Electronic Resource
    Electronic Resource
    Independent detection of vertical and lateral forces with a sidewall-implanted dual-axis piezoresistive cantilever (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1388-1390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-axis atomic force microscope (AFM) cantilever with independent piezoresistive sensors has been developed for simultaneous detection of vertical and lateral forces. The cantilever consists of a flat, triangular probe connected to a base by four tall, narrow ribs. The vertically compliant triangular probe and the laterally compliant ribs incorporate separate piezoresistors for vertical and lateral force sensing. In the fabrication process, a special oblique ion implant technique is used to produce electrical elements on vertical sidewalls and horizontal surfaces of the cantilever structure at the same time. The dual-axis cantilever has been used to perform microfriction measurements as well as obtain simultaneous vertical-force and lateral-force AFM images. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121064
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  • 5
    Electronic Resource
    Electronic Resource
    Low-stiffness silicon cantilevers for thermal writing and piezoresistive readback with the atomic force microscope (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2767-2769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-stiffness silicon cantilevers have been developed for proposed data storage devices based on the atomic force microscope, in particular thermomechanical recording. The cantilevers combine a sharp tip with an integrated piezoresistive sensor for data readback from a rotating polycarbonate disk. A novel process was developed to make shallow piezoresistors in cantilevers 1 μm thick, significantly thinner and therefore softer than previously possible. Readback was demonstrated at linear velocities up to 120 mm/s. Separate cantilevers with resistively heated tips were fabricated for writing data marks on polycarbonate, with measured thermal time constants of 30 μs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117669
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  • 6
    Electronic Resource
    Electronic Resource
    Attonewton force detection using ultrathin silicon cantilevers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 288-290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measured force resolution of 5.6×10−18 N/Hz at 4.8 K in vacuum using a single-crystal silicon cantilever only 600 Å thick is demonstrated. The spring constant of this cantilever was 6.5×10−6 N/m, or more than 1000 times smaller than that of typical atomic force microscope cantilevers. The cantilever fabrication includes the integration of in-line tips so that the cantilever can be oriented perpendicular to a sample surface. This orientation helps suppress cantilever snap-in so that high force sensitivity can be realized for tip-sample distances less than 100 Å. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119522
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  • 7
    Electronic Resource
    Electronic Resource
    Novel infrared detector based on a tunneling displacement transducer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1820-1822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pneumatic infrared detector [M. J. E. Golay, Rev. Sci. Instrum. 18, 347 (1947)] uses thermal expansion of a gas to detect infrared radiation. We have designed a detector based on this principle, but which is constructed entirely from micromachined silicon, and uses an electron tunneling displacement transducer to detect the expansion of the gas. The design, fabrication, and characterization of the first prototype sensor are described. Its sensitivity is competitive with the best available uncooled infrared detectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106209
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  • 8
    Electronic Resource
    Electronic Resource
    High-sensitivity piezoresistive cantilevers under 1000 Å thick (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 289-291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin, high-sensitivity piezoresistive cantilevers were constructed using vapor-phase epitaxy to grow the conducting layer. A fourfold reduction in thickness was achieved over the thinnest implanted piezoresistive cantilevers, allowing improved force or displacement sensitivity and increased bandwidth. In cantilevers 890 Å thick, the dopant is well confined to the surface, and the sensitivity is 70% of the theoretical maximum. A cantilever fabricated for high force resolution has a minimum detectable force of 8.6 fN/Hz in air. Additionally, the 1/f noise is shown to follow the relation proposed by Hooge [Phys. Lett A 29, 139 (1969)], increasing in inverse proportion to the number of carriers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124350
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  • 9
    Electronic Resource
    Electronic Resource
    Silicon dopant imaging by dissipation force microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2785-2787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of 1014–1018 cm−3. Dopant imaging with 150 nm spatial resolution was demonstrated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125149
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  • 10
    Electronic Resource
    Electronic Resource
    Fabrication of collimating grids for an x-ray solar telescope using LIGA methods (1997)
    Springer
    Microsystem technologies 3 (1997), S. 91-96 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  We are fabricating sub-collimating X-ray grids that are to be used in an orbiting solar X-ray telescope. The telescope optics consist of twelve rotating pairs of high aspect ratio grids. The pitch for the grids ranges from 34 μm to 317 μm. The grid thickness-to-grid-slit ratio must be approximately 50:1, resulting in grid thicknesses of 1 to 10 millimeters. We are implementing a design in which a 34 μm pitch, free-standing PMMA grid is fabricated with 20 μm wide slits through a 800 μm thickness. After exposure and developing, metal is electrodeposited into the slits in the PMMA grid and the PMMA is left in place to hold the individual metal pieces. For optimum imaging performance, the root-mean-square pitch of the two grids of each pair must match to within 1 part in 10000 and simultaneous exposures of stacked sheets of PMMA have insured that this requirement is met.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050062
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