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  • 1
    Publication Date: 2023-12-12
    Description: 〈title xmlns:mml="http://www.w3.org/1998/Math/MathML"〉Abstract〈/title〉〈p xmlns:mml="http://www.w3.org/1998/Math/MathML" xml:lang="en"〉Reducing carbon dioxide to value‐added chemicals by electrolysis is a promising strategy to substitute fossil‐based processes. Research on CO〈sub〉2〈/sub〉 electrolysis has vastly progressed, focusing on catalysis and electrode design, leaving an essential question on the central part of the electrolyzer: Which type of ion exchange membrane is best suited for CO〈sub〉2〈/sub〉 electrolysis from an economic perspective? To address this question, holistic process optimization of CO〈sub〉2〈/sub〉 reduction and product purification is applied. The findings demonstrate that CO〈sub〉2〈/sub〉 electrolysis with an anion exchange membrane shows competitive production costs for CO of 796 €/t〈sub〉CO〈/sub〉, outperforming cation exchange and bipolar membranes. Unlike often described, the CO〈sub〉2〈/sub〉 pumping effect does not significantly impair the economics but offers an efficient indirect regeneration of dissociated CO〈sub〉2〈/sub〉. Furthermore, the results emphasize selective reduction of CO〈sub〉2〈/sub〉 rather than co‐electrolysis of CO〈sub〉2〈/sub〉 and H〈sub〉2〈/sub〉O. While pointing to a positive economic perspective, life‐cycle assessment highlights the need to minimize CO〈sub〉2〈/sub〉 emissions related to electricity consumption and incomplete CO〈sub〉2〈/sub〉 utilization.〈/p〉
    Description: 〈p xmlns:mml="http://www.w3.org/1998/Math/MathML" xml:lang="en"〉Holistic optimization of CO〈sub〉2〈/sub〉 electrolysis and downstream processing highlighted an electrolyzer with an anion exchange membrane to be the most economical for CO production. Interestingly, the CO〈sub〉2〈/sub〉 pumping effect offers an efficient indirect regeneration of dissociated CO〈sub〉2〈/sub〉. Moreover, selective CO〈sub〉2〈/sub〉 reduction is emphasized from economic and ecological assessment, demanding mitigation of CO〈sub〉2〈/sub〉 emissions related to electricity consumption and incomplete utilization. 〈boxed-text position="anchor" content-type="graphic" xml:lang="en"〉 〈graphic position="anchor" id="jats-graphic-1" xlink:href="urn:x-wiley:23667486:media:adsu202300077:adsu202300077-gra-0001"〉 〈/graphic〉 〈/boxed-text〉〈/p〉
    Keywords: ddc:333.7 ; carbon utilization ; electrochemical CO2 reduction ; holistic process optimization ; life‐cycle assessment ; techno‐economic assessment
    Language: English
    Type: doc-type:article
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 3832-3836 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 992-994 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2623-2630 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique which shows promise for achieving stable contacts is reported. This technique involves the selective oxidation of Ga in H2O/H2 mixtures simultaneous with the reaction of the metal and As to form a metal arsenide compound. The oxidation step is followed by removing the Ga2O3 layer using an acid etch. The large free energy of formation of gallium oxide enables the adjustment of the partial pressure of H2O to H2 so that only gallium is oxidized, while the GaAs substrate, metal, and metal arsenide are not. This method is discussed for three metal contacts to GaAs: In, Pt, and Cr. The technique was applied to GaPt/PtAs2/GaAs structures. The GaPt phase can be oxidized completely, whereas the inner PtAs2 is left unoxidized. The oxide can be etched off to leave a structure consisting only of platinum-arsenide on the GaAs substrate.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2557-2559 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of prereacted Pt films on (100) oriented n-GaAs substrates was studied in the temperature range between 550 and 750 °C using Auger electron spectroscopy and Xe+ ion profiling. The GaPt/PtAs2/GaAs structure formed during annealing in hydrogen was oxidized using a mixture of water vapor and hydrogen. The GaPt phase can be oxidized completely, whereas the inner PtAs2 and GaAs interfaces are left unoxidized. The oxidation of the platinum-gallium phase is self-limited by the diffusion of the Ga through the gallium oxide overlayer. The oxide can be etched off to leave a structure consisting only of platinum-arsenide on the GaAs substrate.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3750-3752 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach is presented which eliminates the problems caused by hydrocarbon polymer deposition in etching compound semiconductor with CH4/H2 based plasmas. We find that atomic nitrogen, created by the addition of N2 to the plasma, inhibits polymer deposition in the chamber and on the sample. Atomic nitrogen has several beneficial effects; the elimination of polymer precursors, the reduction of the atomic hydrogen concentration, and a potential increase of methyl radical concentration. It is also demonstrated that the addition of N2 to CH4/H2 based electrocyclotron resonance plasmas used to etch HgCdTe eliminates the roughness normally formed during etching. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 398-400 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of the fast diffusion of Si in GaAs from deposited surface layers oxidized in an Ar/H2O ambient indicates excess As, formed by oxidation of Ga originating from the substrate, is responsible for the enhanced diffusion of Si into the substrate. The formation of the SiO2 on the surface during oxidation prevents loss of the excess As, which accumulates in the remaining Si film. Higher H2O partial pressures during the oxidation produce higher As/Si ratios, resulting in an increase in the Si diffusion depth and concentration. However, the n-type carrier concentration decreases with higher As/Si ratios in the remaining Si layer. A second, nonoxidizing anneal on samples with the SiO2 and Si layer removed produced different effects on the carrier concentration, depending on whether As was free to escape from the substrate. The results indicate that excess As related defects such as gallium vacancies are probably responsible for the n-type compensation in the fast diffused samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 39 (1967), S. 373-374 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Environmental science & technology 4 (1970), S. 1129-1136 
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1467-6486
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: This study examined dimensions and levels of career orientations and their correlation with work-related outcome criteria among industrial R&D professionals. Questionnaire data were obtained in 11 West German, 4 British, and 2 US R&D units of large industrial companies. Respondents were 729 West German, 217 British, and 124 US scientists and engineers. Managerial career orientation and professional/scientific career orientation emerged from factor and scale analyses as two independent orientation dimensions with similar meaning across the three countries and the 17 R&D organizations. Results indicated significant cross-country differences in levels of professional/scientific career orientation, but not in levels of managerial career orientation. Significant differences in levels of both orientation dimensions were detected between R&D units within countries. Distinctive characteristics of West German firms employing R&D staff with particularly strong professional/scientific or managerial career orientations are suggested. Managerial and professional/scientific career orientations were found to be differentially related to objective indicators and self-ratings of research performance. Directions for future research and managerial implications for selecting and rewarding R&D employees with different patterns of career orientations are discussed.
    Type of Medium: Electronic Resource
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