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  • 1
    Electronic Resource
    Electronic Resource
    A novel approach to image processing in spin-polarized electron microscopy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3430-3433 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The value of spin-polarized electron micrographs may be enhanced dramatically by the use of statistical image analysis techniques. These techniques can be used to display the vectorial nature of spin polarization data and give images of the highest magnetic contrast. The resulting images are free of the difficulties of interpretation inherent in the conventional dual grey-scale imaging technique and allow for quantification of the spatially resolved spin-polarized signal. The techniques are illustrated using the results from a Fe-4% Si crystal surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140540
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of SiO2 surface chemistry on the oxidation of silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 715-717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the retardation in the silicon oxidation rate associated with an ammonium hydroxide-hydrogen peroxide preclean is due to trace amounts of aluminum in the region of the SiO2 surface. This aluminum and the retarding effect can be eliminated by removing less than 50 A(ring) of thermal oxide in a HF:H2O etch. Depositing thin films of aluminum with thicknesses between 0.05 and 1 monolayers (ML) on HF cleaned surfaces produced the same retardation as the NH4OH based cleans. These results indicate the importance of the SiO2 surface in silicon oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101469
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  • 3
    Electronic Resource
    Electronic Resource
    Properties of ultrathin thermal nitrides in silicon Schottky barrier structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 638-640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally grown silicon nitride layers ≤30 A(ring) thick have been investigated as interfacial layers in silicon Schottky barrier structures. Current-voltage characteristics of these devices show modified barrier heights with near unity ideality factors, more ideal than those obtained using silicon dioxide films of the same thickness. By appropriate choice of metal or of nitride layer thickness barrier heights in any desired range can be produced. Barrier heights of different metals are "unpinned'': they differ by a fixed constant, independent of the thickness, indicating that interface trap states are not present in sufficient quantity to affect the barrier height. The barrier height varies roughly linearly with nitride thickness, for both as-grown and etched films, suggesting the presence of a constant quantity of positive fixed charge located at the silicon-silicon nitride interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100903
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  • 4
    Electronic Resource
    Electronic Resource
    Oxide interfacial layers in Au ohmic contacts to p-type Hg1−xCdxTe (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 925-927 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealed Au contacts to p-type Hg1−xCdxTe with thin interfacial oxide layers exhibit ohmic behavior. These interfacial layers have been produced by plasma oxidizing the Hg1−xCdxTe surface prior to Au evaporation or as a result of electroless Au deposition from AuCl3 which also produces an interfacial layer. We believe this ohmic behavior is primarily a result of the low interface state density at the interfacial layer/Hg1−xCdxTe interface and in addition, a 100 °C anneal promotes a further reduction in the interface state density and thus lowered the contact resistance. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102627
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  • 5
    Electronic Resource
    Electronic Resource
    Direct observation of the etching of damaged surface layers from natural diamond by low-energy oxygen ion bombardment (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 288-290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of oxygen ions with diamond surfaces is reported. Using electron energy loss spectroscopy (EELS), we found that 200 eV oxygen ion bombardment removed surface damaged layers (non-sp3 bonded), recovering diamond EELS features in the surface region, Higher-energy oxygen ion bombardment does not produce surfaces as ideal as the 200 eV case. The oxygen surface concentration after the 200 eV oxygen ion irradiation, examined using Auger electron spectroscopy, was determined to be ∼1×1015 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111183
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stability of molybdenum–silicon nitride–silicon Schottky diodes (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3149-3153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously our group [Sobolewski et al., Appl. Phys. Lett. 54, 638 (1988)] had demonstrated metal–thin insulator-silicon Schottky diode structures which allow the Si Schottky barrier height to be adjusted over nearly the full range of the silicon band gap by an appropriate choice of insulator thickness and metal. However, previous attempts to achieve a structure with a high barrier height to a p type that is stable above 400 °C (using primarily titanium) have failed. In this paper we report on results for molybdenum, which has a stable tie line to SiO2 and Si3N4 in a metal–silicon–oxygen (nitrogen) ternary phase diagram which leads to a more stable system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348583
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of single-phase MAsx films on GaAs by selective wet-hydrogen oxidation and etching (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2623-2630 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique which shows promise for achieving stable contacts is reported. This technique involves the selective oxidation of Ga in H2O/H2 mixtures simultaneous with the reaction of the metal and As to form a metal arsenide compound. The oxidation step is followed by removing the Ga2O3 layer using an acid etch. The large free energy of formation of gallium oxide enables the adjustment of the partial pressure of H2O to H2 so that only gallium is oxidized, while the GaAs substrate, metal, and metal arsenide are not. This method is discussed for three metal contacts to GaAs: In, Pt, and Cr. The technique was applied to GaPt/PtAs2/GaAs structures. The GaPt phase can be oxidized completely, whereas the inner PtAs2 is left unoxidized. The oxide can be etched off to leave a structure consisting only of platinum-arsenide on the GaAs substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348654
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  • 8
    Electronic Resource
    Electronic Resource
    Comparison of surface properties of sodium sulfide and ammonium sulfide passivation of GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4306-4310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sodium sulfide has been demonstrated to significantly improve the electrical properties of the ambient-exposed (100) GaAs surface. It has also shown usefulness in several practical device structures. Ammonium sulfide has been proposed to have similar properties and has already been demonstrated to improve InP and GaAs devices. We compare the photoluminescence behavior and band bending of GaAs samples treated with these two different sulfide species. We also compare the chemical nature of the surfaces treated using these two processes by Auger electron spectroscopy. The surface recombination velocity was found to be similarly affected by the two treatments and the band bending found to be essentially identical. Sodium sulfide produces a film and interfacial region rich in oxygen due to hydration. However, the ammonium sulfide was found to leave very little oxygen on the surface, even compared to conventional GaAs cleaning and etching procedures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343316
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  • 9
    Electronic Resource
    Electronic Resource
    Isotopic tracer studies of oxygen transport through SiO2 films at 1000 °C using secondary ion mass spectrometry (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1767-1769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dry oxides (≤8 ppm H2O) grown on Si(100) at 1000 °C at 1 atm using purified 16O2 and purified 18O2 were analyzed using secondary ion mass spectrometry. 18O is observed at the interface, in the bulk of the 16O oxide, and at the surface in agreement with other recent reports. Our results show little lattice diffusion in agreement with Mikkelsen's work [Appl. Phys. Lett. 45, 1187 (1984)]. A previous report [J. Electrochem. Soc. 131, 1944 (1984)] of appreciable lattice diffusion is due to higher water content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337028
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  • 10
    Electronic Resource
    Electronic Resource
    The synthesis and properties of low barrier Ag-Ga intermetallic contacts to n-type GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1367-1369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that uniform silver-gallium alloy films, containing up to 30% gallium, can be controllably and reproducibly fabricated by electron-beam evaporation from a single alloy source. As expected from bulk thermodynamic arguments, these films are metallurgically stable with respect to GaAs up to their melting point. The alloying of silver with gallium results in a substantial reduction in n-type barrier height. Analogous increases in barrier height were observed for contacts to p-type material. Barrier heights as low as 0.59–0.62 eV were measured for annealed ζ-AgGa contacts to n-type material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346686
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