ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Component parts of the World Heat Flow Data Collection
    PANGAEA
    Details
    Publication Date: 2023-05-12
    Keywords: Area/locality; Conductivity, average; Depth, bottom/max; Depth, top/min; ELEVATION; Heat flow; LATITUDE; LONGITUDE; Method comment; Number; Number of conductivity measurements; Sample, optional label/labor no; Temperature gradient
    Type: Dataset
    Format: text/tab-separated-values, 269 data points
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    DATA PANGAEA
  • 2
    Electronic Resource
    Electronic Resource
    Ultrasonic measurements on silver(Ag)-high Tc superconductor (YBa2Cu3O7−δ) composites at high pressures up to 0.4 GPa (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7182-7184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal and transverse velocities of various Ag-YBa2Cu3O7−δ composite samples have been measured under high pressure in nitrogen gas (up to 0.4 GPa) using ultrasonic techniques. A systematic relationship between the elastic properties and the composition of these composites is observed. The sound velocities of pure YBa2Cu3O7−δ derived from our experimental data are in good agreement with previous results obtained on single crystalline and oriented polycrystalline samples
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349760
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Identification of the energy levels of Si:Rh (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2251-2255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two thermostable levels E(0.31) and E(0.58) related to Rh in Si were observed using deep level transient spectroscopy and double correlation deep level transient spectroscopy techniques. By means of thermal annealing and electron irradiation, the microscopic natures of these levels were identified for the first time. The levels E(0.31) and E(0.58) arise from by the same impurity center but have different charge states. Their microstructures are not related to a pure substitutional Rh atom, but correspond to a complex. This result is compared to our self-consistent theoretical calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348704
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Physical behavior of ruthenium in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2746-2748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the physical behavior of Ru atom in silicon in this paper. Two energy levels E(0.58) and H(0.34) were observed. The pure substitutional Ru in silicon was responsible for the H(0.34), and the E(0.58) was introduced by a complex of a Ru atom and a vacancy (or vacancies). By use of scattered wave-Xα (SW-Xα) cluster method the theoretical calculation of electronic states for substitutional Ru atom in silicon has been performed. The results obtained were compared with those of experimental measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348632
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Graphite-diamond transition in gem anvil cells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 204-207 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: By replacing the anvils in a diamond cell with transparent gem materials, a gem anvil cell (GAC) has been constructed for high-pressure generation. We reached pressures of 8.9 and 7.8 GPa with cubic zirconia and sapphire anvil cell, respectively. For high-temperature studies the cell can be heated to temperatures as high as 2000 °C with resistive heating of the gasket. Simultaneously high temperature and pressure approaching 1700 °C and 6 GPa were obtained as indicated by the direct conversion of graphite to diamond in the high-temperature GAC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144779
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Ellipsometry Studies of the Self-Assembly of Nonionic Surfactants at the Silica-Water Interface: Equilibrium Aspects (1994)
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 2294-2300 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00019a045
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Theoretical study of the Pd-B complex in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7139-7141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results for the electronic structure of the interstitial Pd-substitutional B complex in silicon. The self-consistent field calculations were performed within the framework of scattered-wave Xα cluster method. Compared with the electronic structures of the isolated substitutional B in silicon and of the isolated interstitial Pd in silicon, we found that the shallow acceptor B impurity state is deepened by the perturbation from the Pd atom. The ionic model, which is currently accepted to describe interstitial 3d transition metal-III A group shallow acceptor impurity pair, is not quite suitable to deal with the system of Pd-B complex in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344537
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    On the design of a multiplexer with a common junction (1990)
    Springer
    Circuits, systems and signal processing 9 (1990), S. 75-97 
    Details
    ISSN: 1531-5878
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Two sets of formulas for scattering parameters are presented for multiplexers having parallel and series configurations with a common junction. A new general design approach is developed for multiplexers having any response types and any number of channel filters of arbitrary degree, bandwidth, and interchannel spacing. By using these formulas and computer optimization techniques for all the element values in the channel filters, the design process results in a good match at the common input port over the transmission frequency band. Several examples including a contiguous multiplexer are given to demonstrate the design procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01187722
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Features of Machine Variables in Thermosonic Flip Chip (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 339 (May 2007), p. 257-262 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: An assembly bed on thermosonic flip chip bonding was set up, two different structures oftool tips were designed, and a series of experiments on flip chip and bonding machine variableswere carried out. Lift-off characteristics of thermosonic flip chip were investigated by usingScanning Electron Microscope (JSM-6360LV), and vibration features of tool tips driven by highfrequency were tested by using PSV-400-M2 Laser Doppler Vibrometer. Results show that, forchip-press model, slippage and rotation phenomena between tool tip and chip have been solved byusing tool with greater area tip pattern during flip-chip bonding process, and welding failuresappeared in chip-collet model have been controlled. Greater area pattern on tool tip is better thansmall area pattern. The power of ‘n’ bumps on flip chip bonding is far smaller than that of n×(thepower of single wire bonding). The power is directly proportion to vibration displacement driven bythe power, high-power decrease positioning precision of flip chip bonding or result in slippage androtation phenomena. The proper machine variables ranges for thermosonic flip chip had beenobtained
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.339.257.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Study on the Mechanism about the Effect of Technological Parameters on Performance of Fiber Coupler (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 324-325 (Nov. 2006), p. 209-212 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: To find out the effect mechanism of technological parameters on the performance offiber coupler, the relationship between the technological parameters and the optical performance isinvestigated by using a six-axes optical fiber coupler machine as experimental setup. It is discovered thatthe technological parameters such as drawing speed and fused temperature have a great effect onoptical performance of fibre coupler. The fused region and taper region of fiber coupler are testedwith scanning electron microscope (SEM). It is discovered that there are crystalline grains in thefused region. And the crystalline grains decrease while drawing speed increase. In the taper region,there are micro cracks. And the cracks are more obvious while drawing speed increases. When thefused temperature is above some point (here is 1350[removed info]), the micro cracks in the taper regiondisappear and the optical performance of fiber coupler is the highest at this time
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.324-325.209.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...