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  • 1
    Publication Date: 2011-01-07
    Description: The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in two-dimensional materials, where even a line defect can divide and disrupt a crystal. These issues take on practical significance in graphene, which is a hexagonal, two-dimensional crystal of carbon atoms. Single-atom-thick graphene sheets can now be produced by chemical vapour deposition on scales of up to metres, making their polycrystallinity almost unavoidable. Theoretically, graphene grain boundaries are predicted to have distinct electronic, magnetic, chemical and mechanical properties that strongly depend on their atomic arrangement. Yet because of the five-order-of-magnitude size difference between grains and the atoms at grain boundaries, few experiments have fully explored the graphene grain structure. Here we use a combination of old and new transmission electron microscopy techniques to bridge these length scales. Using atomic-resolution imaging, we determine the location and identity of every atom at a grain boundary and find that different grains stitch together predominantly through pentagon-heptagon pairs. Rather than individually imaging the several billion atoms in each grain, we use diffraction-filtered imaging to rapidly map the location, orientation and shape of several hundred grains and boundaries, where only a handful have been previously reported. The resulting images reveal an unexpectedly small and intricate patchwork of grains connected by tilt boundaries. By correlating grain imaging with scanning probe and transport measurements, we show that these grain boundaries severely weaken the mechanical strength of graphene membranes but do not as drastically alter their electrical properties. These techniques open a new window for studies on the structure, properties and control of grains and grain boundaries in graphene and other two-dimensional materials.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Huang, Pinshane Y -- Ruiz-Vargas, Carlos S -- van der Zande, Arend M -- Whitney, William S -- Levendorf, Mark P -- Kevek, Joshua W -- Garg, Shivank -- Alden, Jonathan S -- Hustedt, Caleb J -- Zhu, Ye -- Park, Jiwoong -- McEuen, Paul L -- Muller, David A -- England -- Nature. 2011 Jan 20;469(7330):389-92. doi: 10.1038/nature09718. Epub 2011 Jan 5.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21209615" target="_blank"〉PubMed〈/a〉
    Keywords: Copper ; Graphite/*chemistry ; Microscopy, Atomic Force ; Microscopy, Electron, Scanning Transmission ; Microscopy, Electron, Transmission ; Particle Size
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 2
    Publication Date: 2013-10-12
    Description: Structural rearrangements control a wide range of behavior in amorphous materials, and visualizing these atomic-scale rearrangements is critical for developing and refining models for how glasses bend, break, and melt. It is difficult, however, to directly image atomic motion in disordered solids. We demonstrate that using aberration-corrected transmission electron microscopy, we can excite and image atomic rearrangements in a two-dimensional silica glass-revealing a complex dance of elastic and plastic deformations, phase transitions, and their interplay. We identified the strain associated with individual ring rearrangements, observed the role of vacancies in shear deformation, and quantified fluctuations at a glass/liquid interface. These examples illustrate the wide-ranging and fundamental materials physics that can now be studied at atomic-resolution via transmission electron microscopy of two-dimensional glasses.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Huang, Pinshane Y -- Kurasch, Simon -- Alden, Jonathan S -- Shekhawat, Ashivni -- Alemi, Alexander A -- McEuen, Paul L -- Sethna, James P -- Kaiser, Ute -- Muller, David A -- New York, N.Y. -- Science. 2013 Oct 11;342(6155):224-7. doi: 10.1126/science.1242248.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/24115436" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 3
    Publication Date: 2013-06-24
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 4
    Publication Date: 2018-05-25
    Description: Author(s): D. Alden, J. S. Harris, Z. Bryan, J. N. Baker, P. Reddy, S. Mita, G. Callsen, A. Hoffmann, D. L. Irving, R. Collazo, and Z. Sitar The authors present an approach for identifying the point defects and defect complexes responsible for the technology-limiting absorption band in the UV-C range (100—280 nm), and the associated luminescence bands, in single-crystalline AlN. The approach employs analysis via density functional theory with the total-charge-balance constraint in the crystal, by incorporating impurity data from secondary-ion mass spectroscopy and power-dependent photoluminescence excitation spectroscopy, to determine the responsible defects and their thermodynamic transition levels. This methodology may help to solve a key problem in AlN-based optoelectronics, and could be extended to other materials. [Phys. Rev. Applied 9, 054036] Published Thu May 24, 2018
    Electronic ISSN: 2331-7019
    Topics: Physics
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  • 5
    Publication Date: 2013-07-10
    Description: Bilayer graphene has been a subject of intense study in recent years. The interlayer registry between the layers can have dramatic effects on the electronic properties: for example, in the presence of a perpendicular electric field, a band gap appears in the electronic spectrum of so-called Bernal-stacked graphene [Oostinga JB,...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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