ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    SiFx and SFx molecular ion implantations into GaAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1503-1505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated fundamental electrical characteristics of GaAs implanted with SiFx and SFx (x=1, 2, and 3) molecular ions at energies which give the same dopant atom (Si or S) ion ranges. Three kinds of annealing methods were compared. Characterization of these implanted GaAs layers was carried out by the Hall effect, capacitance-voltage, and secondary ion mass spectrometry measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98616
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Enhancement in activation efficiency for a SiF3-implanted GaAs layer by a new annealing method (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 503-504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a new phenomenon in which the activation efficiency of a SiF3 -implanted GaAs layer is increased by the preimplant thermal treatment of the semi-insulating GaAs substrate with SiO2 encapsulant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100619
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    New rapid thermal annealing for GaAs digital integrated circuits (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1102-1107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new rapid thermal annealing (RTA) method that uses GaAs guard rings has been developed. A new temperature monitoring method is also described. Generations of slip lines on 2-in.-diam GaAs wafers annealed in different kinds of RTA arrangements were investigated by x-ray transmission topography. The use of three GaAs guard rings has been found to be very effective in reducing slip lines. The temperature dependence of activation and uniformity of annealing characteristics for a selective Si-implanted 2-in.-diam GaAs wafer at 100 keV with a dose of 5×1012 cm−2 were evaluated by drain saturation current (Idss) distribution of gateless field-effect transistors (FETs) over the wafer. The best uniformity, as well as the highest activation, was obtained by RTA at 920 °C for 15 s. The activation energy of 1.47 eV for the average value of Idss (∼(Idss)) was obtained. By using this RTA method, GaAs digital integrated circuits (ICs), dual-modulus prescalers, have been successfully fabricated with high yield for the first time. This RTA method is very promising for GaAs digital IC processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339716
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Self-consistent calculation of electronic states in AlGaAs/GaAs/AlGaAs selectively doped double-heterojunction systems under electric fields (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4277-4281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic states in AlGaAs/GaAs/AlGaAs selectively doped double-heterojunction (SD-DH) systems or single-quantum-well systems have been calculated self-consistently for the case where an external gate voltage is applied perpendicularly to the surface. The transition from symmetrical to asymmetrical distributions of electrons by the external field is predicted. The calculated variations of electron concentration with the gate voltage are found to be in good agreement with the experiment. The shoulder structures observed in the gate voltage dependence of mobility have been successfully accounted for and ascribed to the onset of electron population in the upper subbands. This analysis is expected to provide powerful means to evaluate the performance of SD-DH field-effect transistors and to optimize their design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335563
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    WSiN/SiO2 capped annealing for Si-implanted GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6171-6174 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new cap annealing method using WSiN/SiO2 multilayer film for Si-implanted GaAs has been developed. The post-implant annealing was performed by varying the SiO2 thickness in Ar/H2 atmosphere without As overpressure. The annealed layers were characterized by Hall effect, capacitance-voltage, secondary ion mass spectrometry, and 77-K photoluminescence measurements. The WSiN/SiO2 capped annealing method was found to offer high-activation efficiency without the deep tailing of carrier concentration profiles. Enhanced activation efficiency with the increase in SiO2 thickness was also observed for this annealing method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345180
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    InyGa1−yAs/InyAl1−yAs resonant tunneling diodes on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 111-113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling diodes are fabricated using InyGa1−yAs/InyAl1−yAs on GaAs substrates for the first time. The devices showed increasing peak current density as the In content was raised from 0 to 0.3, which is shown to be consistent with the Γ valley being the predominant transport mechanism at the tunneling resonance. Devices with y=0.2 showed an average peak to valley current ratio of 4.2 at room temperature, versus 3.3 for y=0. The decrease in the peak to valley current ratio is attributed to a decreased tunneling component in the X valleys of the In0.2Al0.8As barrier layers. Devices with y=0.3 show room-temperature peak to valley current ratios of approximately 2.5; the increased valley current is attributed to interface roughness scattering and other effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105562
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Status of GaN-Based Power Switching Devices (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1257-1262 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: State-of-the-art technologies of GaN-based power switching transistors are reviewed, inwhich normally-off operation and heat spreading as technical issues. We demonstrate a new operationprinciple of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GITutilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electrondensity in the depleted channel resulting in dramatic increase of the drain current owing toconductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0Vwith high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) andoff-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 800V, respectively. These values are the bestones ever reported for GaN-based normally-off transistors. In addition, we propose the use ofpoly-AlN as surface passivation. The AlN has at least 200 times higher thermal conductivity thanconventional SiN so that it can effectively reduce the channel temperature
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1257.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Molecular Composition of Progenitor Toxin Produced by Clostridium botulinum Type C Strain 6813 (1999)
    Springer
    The protein journal 18 (1999), S. 753-760 
    Details
    ISSN: 1573-4943
    Keywords: Botulinum neurotoxin C-6813 ; progenitor toxin, N-terminal amino acid sequence ; C-terminal amino acid sequence, hemagglutinin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The molecular composition of the purified progenitor toxin produced by a Clostridium botulinum type C strain 6813 (C-6813) was analyzed. The strain produced two types of progenitor toxins (M and L). Purified L toxin is formed by conjugation of the M toxin (composed of a neurotoxin and a non-toxic nonhemagglutinin) with additional hemagglutinin (HA) components. The dual cleavage sites at loop region of the dichain structure neurotoxin were identified between Arg444-Ser445 and Lys449-Thr450 by the analyses of C-terminal of the light chain and N-terminal of the heavy chain. Analysis of partial amino acid sequences of fragments generated by limited proteolysis of the neurotoxin has shown to that the neurotoxin protein produced by C-6813 was a hybrid molecule composed of type C and D neurotoxins as previously reported. HA components consist of a mixture of several subcomponents with molecular weights of 70-, 55-, 33-, 26~21- and 17-kDa. The N-terminal amino acid sequences of 70-, 55-, and 26~21-kDa proteins indicated that the 70-kDa protein was intact HA-70 gene product, and other 55- and 26~21-kDa proteins were derived from the 70-kDa protein by modification with proteolysis after translation of HA-70 gene. Furthermore, several amino acid differences were exhibited in the amino acid sequence as compared with the deduced sequence from the nucleotide sequence of the HA-70 gene which was common among type C (strains C-St and C-468) and D progenitor toxins (strains D-CB16 and D-1873).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1020677417356
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Dichain Structure of Botulinum Neurotoxin: Identification of Cleavage Sites in Types C, D, and F Neurotoxin Molecules (1999)
    Springer
    The protein journal 18 (1999), S. 885-892 
    Details
    ISSN: 1573-4943
    Keywords: Botulinum neurotoxin ; N-terminal amino acid sequence ; C-terminal amino acid sequence ; surface probability
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Botulinum neurotoxin (NT) is synthesized by Clostridium botulinum as about a 150-kDa single-chain polypeptide. Posttranslational modification by bacterial or exogenous proteases yielded dichain structure which formed a disulfide loop connecting a 50-kDa light chain (Lc) and 100-kDa heavy chain (Hc). We determined amino acid sequences around cleavage sites in the loop region of botulinum NTs produced by type C strain Stockholm, type D strain CB16, and type F strain Oslo by analysis of the C-terminal sequence of Lc and the N-terminal sequence of Hc. Cleavage was found at one or two sites at Arg444/Ser445 and Lys449/Thr450 for type C, and Lys442/Asn443 and Arg445/Asp446 for type D, respectively. In culture fluid of mildly proteolytic strains of type C and D, therefore, NT exists as a mixture of at least three forms of nicked dichain molecules. The NT of type F proteolytic strain Oslo showed the Arg435 as a C-terminal residue of Lc and Ala440 as an N-terminal residue of Hc, indicating that the bacterial protease cuts twice (Arg435/Lys436 and Lys439/Ala440), with excision of four amino acid residues. The location of cleavage and number of amino acid residue excisions in the loop region could be explained by the degree of exposure of amino acid residues on the surface of the molecule, which was predicted as surface probability from the amino acid sequence. In addition, the observed correlation may also be adapted to the cleavage sites of the other botulinum toxin types, A, B, E, and G.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1020687430927
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Characterization of Nicking of the Nontoxic-Nonhemagglutinin Components of Clostridium botulinum Types C and D Progenitor Toxin (2000)
    Springer
    The protein journal 19 (2000), S. 575-581 
    Details
    ISSN: 1573-4943
    Keywords: Clostridium botulinum ; progenitor toxin ; nontoxic-nonhemagglutinin ; nicking ; trypsin-like protease
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Clostridium botulinum C and D strains produce two types of progenitor toxins, M and L. Previously we reported that a 130-kDa nontoxic-nonhemagglutinin (NTNHA) component of the M toxin produced by type D strain CB16 was nicked at a unique site, leading to a 15-kDa N-terminal fragment and a 115-kDa C-terminal fragment. In this study, we identified the amino acid sequences around the nicking sites in the NTNHAs of the M toxins produced by C. botulinum type C and D strains by analysis of their C-terminal and N-terminal sequences and mass spectrometry. The C-terminus of the 15-kDa fragments was identified as Lys127 from these strains, indicating that a bacterial trypsin-like protease is responsible for the nicking. The 115-kDa fragment had mixtures of three different N-terminal amino acid sequences beginning with Leu135, Val139, and Ser141, indicating that 7–13 amino acid residues were deleted from the nicking site. The sequence beginning with Leu135 would also suggest cleavage by a trypsin-like protease, while the other two N-terminal amino acid sequences beginning with Val139 and Ser141 would imply proteolysis by an unknown protease. The nicked NTNHA forms a binary complex of two fragments that could not be separated without sodium dodecyl sulfate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007198202016
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...