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  • 1
    Electronic Resource
    Electronic Resource
    Theoretical study of subband transitions in strain-induced quantum well wires (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 546-552 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have modeled the lateral quantum confinement in a GaAs quantum well due to partial strain release on the side walls of an InGaAs stressor located on the top of the well. We used the finite element method to solve both the continuum elasticity equation and the Luttinger four-band Hamiltonian with strain. This model was used to systematically study the wire width dependence of lateral band edge modulation, subband splitting, and relative transition strength in the strain-induced quantum well wire structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351886
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  • 2
    Electronic Resource
    Electronic Resource
    An electron wave directional coupler and its analysis (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1047-1051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work a specific quantum interference device, which is two coupled-electron waveguides in close proximity, is described and analyzed. After an initial analysis outlining the principle of operation and the constraints on the structure dimensions and material parameters, a specific structure is simulated using a self-consistent Poisson and Schrödinger solver. Results indicate that this device is feasible using current fabrication technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347370
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  • 3
    Electronic Resource
    Electronic Resource
    Resolution limitations in focused ion beam damage-induced masking for photoelectrochemical etching of GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1543-1549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of ion beam damage to locally suppress photoelectrochemical etching of GaAs has been previously described. This study examines the limitations on the resolution of patterns formed by this technique, using a focused ion beam. Directly written patterns of damage were formed in Si-doped n+ GaAs (1×1018 cm−3) by implantation with a 120 keV focused beam of Ga ions. Photoelectrochemical etching of the substrate was suppressed, not only in the implanted regions themselves, but also within a region extending a few micrometers beyond the implanted region. This suppression distance limits the smallest pattern feature or resolution achievable with this technique. The resolution was examined as a function of incident laser intensity, implant dose, the dimensions of the damaged areas, and distance between the damaged areas. A simple one-dimensional model suggests that the diffusion of the photogenerated carriers, relative to their reaction rate at the surface, determines the resolution achievable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351723
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  • 4
    Electronic Resource
    Electronic Resource
    Study of hydrogenation on near-surface strained and unstrained quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3040-3044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of hydrogenation on the luminescence efficiency of near-surface strained InGaAs/GaAs and unstrained GaAs/AlGaAs quantum wells (QWs). By using two different materials with an analogous structure, we have been able to clarify the effects of substrate temperature, ion dosage, strain profile in the material, and material quality on the local hydrogen concentration. This in turn modifies the behavior of hydrogen, the formation of hydrogen-related defects, and the variation of luminescence efficiency from the near-surface QW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356150
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  • 5
    Electronic Resource
    Electronic Resource
    In situ technique for measurement and control of transistor characteristics during remote plasma etching (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1188-1190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ electrical monitoring has been carried out in a remote plasma etching system allowing accurate control of device electrical parameters. We have used this technique to gate recess-etch two different high electron mobility transistor structures while recording device source-drain I-V characteristics throughout the etching. Current versus etching time data and time elapsed I-V curves are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105498
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  • 6
    Electronic Resource
    Electronic Resource
    Methane/hydrogen-based reactive ion etching of InAs, InP, GaAs, and GaSb (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2003-2005 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching (RIE) of InAs, InP, GaAs, and GaSb using CH4/H2 mixtures has been studied to determine the resulting etch profiles and surface morphologies, as well as the dependence of etch rates on cathode temperature, chamber pressure, and electrode self-bias. These materials are found to etch slowly and controllably, with etched samples having smooth surfaces and nearly vertical sidewalls. Our results demonstrate that CH4/H2 RIE is a promising technology for fabricating electronic devices using the newly emerging InAs/GaSb/AlSb material system as well as the better established InP material system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105046
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  • 7
    Electronic Resource
    Electronic Resource
    InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 905-907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated planar heterostructure field-effect transistors with InAs quantum well channels and AlSb barrier layers. Argon implantation was used to form a damaged layer, which resulted in partial device to device isolation. A 1.5 μm gate device had a room-temperature extrinsic transconductance of 208 mS/mm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103400
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  • 8
    Electronic Resource
    Electronic Resource
    In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1916-1918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Auger electron spectroscopy and scanning electron microscopy, we have shown that it is possible to pattern thin films of titanium oxide on GaAs substrates by first condensing multilayers of titanium isopropoxide [Ti(–OC3H7)4] on a cold (〈−20 °C) GaAs(001) surface and then exposing the condensed precursor film to a scanning electron beam (incident energy and flux of 10 keV and 0.18 mC/cm2/s). Under these conditions, the electron-beam-induced deposition rate was found to be constant and equal to a high value of 5.5±1.5 Å/s. Deposition of thick films (i.e., greater than 50 Å) results after electron exposures above 2 mC/cm2; however, increased carbon incorporation was observed within these thicker oxide films. The remaining unexposed precursor was found to desorb upon annealing to room temperature, ensuring selective area pattern definition. Efficient transfer of the written patterns to the underlying GaAs substrate was observed after etching in chlorine (etch depths of 8500 Å were measured after etching for 5 min at 180 °C in 2×10−4 Torr of Cl2). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123712
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  • 9
    Electronic Resource
    Electronic Resource
    High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3147-3149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 Å of n-GaN adjacent to the gate electrode. Source resistance was reduced to 0.95 Ω mm from 1.4 to 1.8 Ω mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122701
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1293-1295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of oxide–semiconductor interfaces formed by wet thermal oxidation of a thin epitaxial AlAs layer. Photoluminescence (PL) from a quantum well in close proximity to the interface is monitored before and after oxidation. The normalized PL intensity was found to decrease roughly in proportion to the degree of completeness of the oxidation. The diminishing luminescence is attributed to the presence of trap states formed at the oxide–semiconductor interface formed during the oxidation process; hydrogen ion treatment is effective in the partial restoration of the luminescence. In addition to the traps, the oxidation process also "disorders" the material within ∼15 nm from the semiconductor–oxide interface, as revealed by transmission electron micrographs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118555
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