Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 6153-6158
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Defect concentrations in AlxGa1−xSb which is in equilibrium with a liquid phase are calculated. When the liquid phase is Ga rich, a Ga antisite (Ga2−Sb) or an Al antisite (Al2−Sb) is dominant, and the concentrations of vacancies are much smaller than the antisite concentrations. Ga2−Sb is dominant in GaSb equilibrated with a Sb-rich solution, but the concentration of Sb antisites comes close to that of Ga2−Sb as temperature is lowered. For x larger than 0.6, a group-III vacancy is the predominant defect in the case of Sb-rich solutions. Calculated net acceptor concentrations agree well with those determined experimentally. A complex defect composed of GaSb and a Ga vacancy, which have been taken as the dominant residual acceptor, is expected to be negligible.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346904
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