ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiCis investigated by means of I-V and C-V measurements. All metal contacts to n- (net donorconcentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC showthe rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC isdecreased from 2.2 to 1.8 eV. The small change of SBH for 3C-SiC may be correlated to the crystalorientation and the defects on the surface of 3C-SiC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.923.pdf
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