Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 3555-3560
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Interstitials can recombine at an oxide/silicon interface. Previous experimental work produces contradictory results. Transient enhanced diffusion experiments suggest a nearly infinite surface recombination rate, while oxidation enhanced diffusion suggests a much weaker recombination rate. A di-interstitial mechanism is investigated, and analytic solutions are developed. This is compared to the more commonly used interstitial mechanism. The di-interstitial mechanism can account for most of the discrepancy in the data. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368530
Permalink
|
Location |
Call Number |
Expected |
Availability |