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  • 1
    Electronic Resource
    Electronic Resource
    Deposition of textured yttria-stabilized ZrO2 films on oxidized silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2046-2051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured yttria-stabilized ZrO2 films have been deposited using rf diode sputtering from a single polycrystalline target. These films were deposited on oxidized silicon substrates at substrate temperatures up to 600 °C using a 90% argon and 10% oxygen sputtering gas mixture. The films crystallized in the cubic phase and were large grained (d∼500 A(ring)). Films deposited above 500 °C exhibit extreme (100) texturing while films deposited without substrate heating exhibit extreme (111) texturing. The effect of oxygen annealing on the crystal structure of these films has also been studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349464
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  • 2
    Electronic Resource
    Electronic Resource
    On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6349-6354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow and deep centers were studied by means of temperature dependent Hall effect and photoluminescence (PL) measurements in two sets of undoped n-AlGaN samples grown by organometallic vapor phase epitaxy. The samples of these two series were grown under different conditions and had, as a result, electron concentrations differing by several orders of magnitude. The composition dependence of ionization energies of dominant donors in these two sets of samples is very different indicating that different types of centers are involved, but in both cases they are most probably related to some native defects. These defects behave as hydrogen-like donors for low Al compositions and become increasingly deeper with increasing Al content. The shallow-deep transition occurs at about x=0.2 in the low conductivity AlxGa1−xN series and at about x=0.5 for the high conductivity series. Several PL bands were detected in AlGaN and it is shown that the band at 3.05 eV is due to a radiative transition between deep donors in the upper part of the band gap and holes in the valence band or on shallow acceptors. For the yellow luminescence band at 2.25 eV it is demonstrated that this band consists of two overlapping bands and that the dominant band is due to a transition between the native donors and a carbon-related deep center. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363653
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective epitaxy of GexSi1−x in an ultrahigh-vacuum chemical vapor deposition reactor from SiH4 and GeH4/H2 is reported for the first time. Growth is performed at 600 °C on patterned wafers after an 800 °C bake which provides a clean silicon surface. Selective growth is maintained during a short incubation time. GeH4/H2 is found to increase the incubation time and the growth rate improving selectivity. Diodes fabricated from selectively grown films demonstrate high material and film/oxide interface quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104998
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  • 4
    Electronic Resource
    Electronic Resource
    GexSi1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5191-5198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report absorption measurements on two types of long-wave infrared detector structures. Both types were grown by ultrahigh vacuum chemical vapor deposition, and were characterized by multiple analytic techniques. In both multiple quantum well (MQW) and heterojunction internal photoemission (HIP) structures, it is found that free-carrier absorption is dominant for normally incident radiation. The measured absorption is fit well by the classical expression for free-carrier absorption, with scattering times of about 10−14 s (MQW) and 5×10−15 s (HIP). The measured absorption is used to evaluate the responsivity that results when all carriers energetically able to surmount the barrier are collected. Based on this analysis, higher responsivity is predicted for HIP detectors, largely because of the greater density of initial states. The responsivity obtained in practice depends upon the photoconductive gain (MQW detectors) or the escape probability (HIP detectors). The escape probability for HIP detectors is measured in Part II. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366324
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of growth of GexSi1−x by ultrahigh vacuum chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2524-2526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the deposition of epitaxial films of GexSi1−x on (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665 °C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2 flow.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102876
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  • 6
    Electronic Resource
    Electronic Resource
    GexSi1−x infrared detectors II. Carrier escape probability and detector performance (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5199-5205 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GexSi1−x/Si heterojunction internal photoemission (HIP) detectors with thresholds in the medium-wave infrared and long-wave infrared (LWIR) regions were fabricated and characterized. Measurements of the photoresponse are fit well by a theory which takes into account the scattering of excited carriers. The probability of escape of an excited hole is calculated and compared with that observed in another detector, the multiple quantum well structure. It is shown that HIP detectors can achieve background-limited performance in the LWIR region when operated at 40 K.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366325
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  • 7
    Electronic Resource
    Electronic Resource
    Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin-film transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1140-1142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance plasmas have been used to produce the most effective, shortest time plasma hydrogenation of thin-film polycrystalline silicon transistors yet reported. We demonstrate that significant improvement in device characteristics can be achieved with these plasmas using exposure times of the order of only 1 min and that 5 min exposures give saturated characteristics of a 2 V threshold voltage, a 65 cm2/V s mobility, and a 107 on/off ratio. We also explore the pressure and power level dependence of this passivation, as well as the effects of shielding with a grid, and show that the more efficient and more stable electron cyclotron resonance hydrogen exposures are at lower pressures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102543
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  • 8
    Electronic Resource
    Electronic Resource
    Single target sputtering of superconducting YBa2Cu3O7−δ thin films on Si (100) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 859-861 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of YBa2Cu3O7−δ have been grown on (100) silicon substrates by single target rf diode sputtering. Yttria-stabilized zirconia buffer layers were used to minimize substrate-film reactions. Off-stoichiometric targets were used to compensate for differences between film and target stoichiometries. The composition of the superconducting layer is also influenced by post-deposition anneals, with films closer to the desired stoichiometry resulting from the higher temperature anneals. Film thicknesses spanned the 0.5–2.0 μm range and the onset and zero resistance ( ρ〈10−7 Ω cm) temperatures were found to be 95 and 70 K, respectively, for 1.8-μm-thick films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101557
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  • 9
    Electronic Resource
    Electronic Resource
    Sputter deposition of YBa2Cu3O6+x on alumina and the influence of ZrO2 buffer layers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1746-1748 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of films of YBa2Cu3O6+x by rf diode sputtering on alumina has been investigated. Although a stoichiometric (123) target was employed, the film composition differs from that of the target and varies as a function of position on the substrate. Films displaying a broad resistive transition have been produced in a reproducible manner. It is demonstrated that the use of a ZrO2 buffer layer decreases the transition width significantly and consistently yields films which have a more metallic-like behavior above Tc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99720
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of yttria-stabilized zirconium oxide buffer layers for high-temperature superconductor thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6502-6504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have employed transmission electron microscopy and x-ray diffraction to investigate the properties of yttria-stabilized zirconium oxide (YSZ) sputter deposited on silicon. It is shown that the as-deposited YSZ films are polycrystalline (grain size 7–20 nm) with microvoids between grains. Anneals of these films at temperatures of 800, 950, and 1100 °C for 1 h eliminate the microvoids and cause the grain size to increase from 20 to 50 nm at the higher anneal temperatures. Particular texture of the YSZ film is controlled by the details of the deposition conditions. Resistivity measurements of superconducting films deposited on silicon using these buffer layers are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342068
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