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  • 1
    Electronic Resource
    Electronic Resource
    The production and use of ultralow energy ion beams : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1032-1035 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ion accelerator, purpose built to produce beams at energies down to 10 eV with current densities in the 10–100 μA cm−2 range, is described. Fitted with dual ion source assemblies, the machine enables ultralow energy ion implantation and the growth of films and multilayers to be carried out under highly controlled conditions. The accelerator delivers ion beams into an ultrahigh vacuum chamber, containing a temperature controlled target stage (range −120 to +1350 °C), where they are used to study the fundamental physics relating to the interaction of ultralow energy ions with surfaces. This knowledge underlies a wide range of ion-beam and plasma-based technologies and, to illustrate its importance, results are presented from investigations designed to determine the optimum conditions for the growth of diamond-like and aluminum films by ion-beam deposition and the formation of ultrashallow junctions in semiconductors by 2.5 keV As+ implantation. The later investigation shows how transient arsenic diffusion, which occurs during post-implant thermal processing, can be controlled by manipulating the substrate temperature during implantation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150379
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum-well intermixing for optoelectronic integration using high energy ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3697-3705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359948
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  • 3
    Electronic Resource
    Electronic Resource
    Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2367-2371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/GaAs/AlGaAs and InGaAs/InGaAsP/InP laser structures, with InGaAs quantum wells approximately 1.85 μm beneath the surface, were implanted with ions having energies up to 8.6 MeV. Intermixing of the quantum wells, after rapid thermal annealing, was monitored through changes in the energy, linewidth, and intensity of the photoluminescence peak from the quantum wells. Where the defects had to diffuse primarily through Al0.71Ga0.29As, these quantities correlate strongly, for short anneal times, with calculated vacancy generation and ion deposition at the depth of the quantum well prior to annealing. This suggests that the defect diffusion length in the AlGaAs and/or GaAs is quite low. For diffusion primarily through InP, the photoluminescence data correlated well with the calculated total number of vacancies created in the sample, suggesting that defect diffusion is very efficient in InP. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360157
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of implantation dose on photoluminescence decay times in intermixed GaAs/AlGaAs quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ion implantation induced intermixing on the effective radiative lifetimes in GaAs/AlGaAs quantum wells is investigated using the technique of time-resolved photoluminescence (TRPL). Below the critical dose, the carrier lifetimes appear enhanced by the processing although no changes are discernible in the continuous wave photoluminescence (CWPL) spectra. Above the critical dose, carrier lifetimes are reduced by residual defects created in the intermixed wells by the implantation procedure. These observations demonstrate the greater sensitivity of TRPL over CWPL in detecting residual damage produced by processing quantum well material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115875
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  • 5
    Electronic Resource
    Electronic Resource
    Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 342-345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron annihilation data from ion implanted and unirradiated Si and SiO2 were obtained at five separate laboratories. Line-shape analysis of the 511 keV annihilation γ rays yielded normalized S parameter signatures for radiation defect distributions in both types of samples. Laboratory-to-laboratory variations are found which, although small, lie outside the expected range of reproducibility. Large variations found in the extracted values for positron diffusion lengths L+ in silicon are identified and thought to arise from differences in sample surface conditions. Possible sources of the observed discrepancies are discussed, together with methods for reducing them. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370735
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  • 6
    Electronic Resource
    Electronic Resource
    Band-gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2954-2956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of ion-induced quantum well intermixing using broad area, high energy (1 MeV P+) ion implantation has been used to tune the emission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW) laser operating at 1.5 μm. The optical quality of the band-gap shifted material is assessed using low-temperature photoluminescence (PL). The band-gap tuned lasers are characterized in terms of threshold current density and external quantum efficiency and exhibit blue shifts in the lasing spectra of up to 63 nm. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating active as well as passive optoelectronic devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114823
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  • 7
    Electronic Resource
    Electronic Resource
    Direct observation of transferred-electron effect in GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2825-2826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct observation of transferred-electron effect in unintentionally doped GaN epilayers grown by metalorganic chemical vapor deposition. The negative differential resistivity (NDR) was observed from the current-electric field characteristics in GaN using a metal-semiconductor-metal (M-S-M) system. The threshold field for the onset of NDR was independent of the spacing of M-S-M fingers, and was measured to be 1.91×105 V/cm for GaN with an n-type carrier concentration of 1014 cm−3. This value is very close to the value obtained from theoretical simulation. This observation is an experimental evidence of transferred-electron effects in GaN, which is important in understanding GaN energy band structure and in the application of Gunn-effect devices using GaN materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114797
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  • 8
    Electronic Resource
    Electronic Resource
    Suppression of dislocation formation in silicon by carbon implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2857-2859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the role of carbon co-implantation in the formation of secondary defects in self-ion-irradiated Si(100). Implantation of Si ions (540 keV energy, 1015 ions/cm2 at 1.3×1011 ions/cm2/s, Ti=90 °C) followed by a 900 °C, 15 min anneal leads to the growth of an extended defect band at the end of range. Range matched-carbon co-implantation (300 keV energy, 1015 ions/cm2 plus 500 keV energy 1015 ions/cm2 of 1.5×1011 ions/cm2/s, Ti=90 °C) can be used to modify this defect development dramatically. While direct co-implantation of carbon and silicon ions to similar concentrations has no apparent effect on the formation of extended defects, such formation is suppressed when the implanted C is incorporated substitutionally into the silicon lattice. These results are discussed in the context of recent reports on C suppression of the transient enhanced diffusion of boron. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114808
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  • 9
    Electronic Resource
    Electronic Resource
    Chemical information in positron annihilation spectra (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3333-3335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron annihilation spectra of arsenic- and gold-implanted silicon are compared with spectra from bulk samples of arsenic and gold. Spectra with strongly reduced background intensities were recorded using a two detector coincidence system with a variable-energy positron beam. It is shown that features in the high-momentum region of the spectra (∼514–520 keV) can be identified with particular elements and that this identification is independent of structure, i.e., whether the element forms the bulk or is an implanted impurity. Proportionality between the intensity of characteristic spectral features and the fraction of annihilating positrons is also demonstrated, using the native oxide on a silicon wafer as a test case. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117297
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  • 10
    Electronic Resource
    Electronic Resource
    Quantum-well intermixing in Si1−xGex/Si strained-layer heterostructures using ion implantation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 993-995 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A demonstration of quantum well intermixing using ion implantation in Si1−xGex/Si strained-layer heterostructures is presented. The quantum-well related photoluminescence lines of implanted and annealed samples are blue shifted by up to 40 meV relative to those measured in annealed-only samples. Optical and structural qualities of the heterostructure remain high after implantation and annealing treatments. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117106
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