ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359948
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