Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
89 (2001), S. 3535-3537
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques and compared with measured peak shift values. A discrepancy between the experimental and modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm thick Al0.057Ga0.943N film grown on a (0001) Al2O3 substrate is presented to demonstrate the utility of the method. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1350619
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