ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Specific contact resistance measurements of ohmic contacts to semiconducting diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 755-760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified version of the specific contact resistance measurement scheme of G. K. Reeves [Solid State Electronics 23, 487 (1980)] has been developed. Its applicability to semiconducting diamond is demonstrated using four sample types: epitaxial films doped to mid 1019 acceptors/cm3 on 〈100〉 and 〈110〉 type IIa substrates; type IIb diamonds 0.25 mm thick, and type IIb diamonds thinned to 0.035–0.05 mm thick. The ohmic contacts were based on a solid-state annealing process using carbide forming metals. The measured specific contact resistance depends mainly on the doping level in the diamond. Measured values ranged from 8×10−6 Ω cm2 for heavily doped films to 1×10−2 Ω cm2 for lightly doped bulk samples. A simple analysis shows that the contacts to highly doped layers are suitable for device applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358996
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1152-1160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the morphology and crystallographic angular discontinuities of subboundaries and defect trails in zone-melting-recrystallized Si films. These subboundaries and defect trails, which originate at the interior corners of the faceted solidification front, are classified into seven types. Evidence is presented that in-plane stress due to temperature gradients plays a major role in causing such defects. Various schemes for entraining subboundaries and defect trails are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337360
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Large-area mosaic diamond films approaching single-crystal quality (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2485-2487 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The seeding for large-area mosaic diamond films approaching single-crystal quality is described. The technique includes patterned etching of relief structures in Si substrates, deposition from a slurry and orientation of macroscopic diamond seed crystals in the structures, and chemical vapor deposition overgrowth of the diamond seeds to form a continuous film. The film comprises ∼100 μm single crystals, which are separated by low-angle grain boundaries of a few degrees or less. We believe that these low-angle grain boundaries will not affect the electrical properties of majority-carrier devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104851
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electrical, crystallographic, and optical properties of ArF laser modified diamond surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2295-2297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulses of 193 nm radiation from an ArF laser with energies exceeding 0.5 J/cm2 have been shown to modify 40–60 nm thick layers of {100} and {110} oriented diamond surfaces. These layers exhibit highly anisotropic electrical and optical properties which have principal in-plane axes along the 〈110〉 directions. The minimum resistance is (4–10)×10−4 Ω cm, and minimum in the optical transmittance and maximum in the reflectance occur when the electric field vector of the incident polarized light is aligned along the low resistance direction. Transmission electron microscopy indicates that the modified layer primarily consists of unidentified graphite-like carbon phases embedded in diamond. The first-order electron diffraction spots correspond to lattice spacings of 0.123, 0.305, and 0.334 nm. The modified layer is stable at 1800 °C, forms ohmic contacts to type IIb diamond, and supports epitaxial diamond growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102042
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Growth of textured diamond films on foreign substrates from attached seed crystals (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 550-552 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique has been developed to grow (111) textured diamond films on smooth substrates using attached diamond seeds. The degree of texture is defined by the initial texture of the seeds. This initial texture depends upon the seed size and the cleaning procedure. Under the best conditions, over 90% of the seeds exhibit a (111) texture with a tip angle of less than 0.25°. Further growth of diamond on these seeds does not affect the texture, and diamond films obtained by such growth are expected to have smoother surfaces and more controlled doping than nontextured polycrystalline films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101830
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Resonant-tunneling transmission-line relaxation oscillator (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2787-2789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental and numerical results are presented for a high-frequency oscillator consisting of a resonant-tunneling diode (RTD) series-embedded in a transmission line, one end of which is short circuited and the other end terminated with a load resistor. Like relaxation oscillators, the ac voltage across the RTD is a square wave. However, the current wave form (and hence the load wave forms) consists of a sequence of sharp pulses that are essentially locked to the fundamental mode of the transmission line. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119059
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electron field emission from diamond and other carbon materials after H2, O2, and Cs treatment (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1328-1330 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports, diamond field emitters, Cs treated, air stable, that emit electrons at the lowest reported field, 〈0.2 V μm−1. Field emission from B-, Li-, P-, and N-doped diamonds and carbonized polymer was characterized as a function of surface treatment. A treated with an O2 plasma, coated with Cs, heated, and exposed to O2 exhibited increased emission for all samples except for B-doped diamond. The best emission was obtained from N-doped diamond samples, followed by carbonized polymer, the Li-doped, and polycrystalline P-doped diamond. Li- and N-doped samples treated with Cs were stable in laboratory air for several days. This stability of the surface-activated diamond is believed to be due to the formation of a diamond–O–Cs salt. If the sample is treated with a H2 plasma instead of an O2 plasma, the Cs-enhanced emission degrades with heat and exposure to O2. Subbands formed by Li and N impurities are believed to be responsible for this enhanced emission. The surface treatment on N-doped diamond results in emission at fields as low as 0.2 V μm−1. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114529
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Comparison of electric field emission from nitrogen-doped, type Ib diamond, and boron-doped diamond (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2294-2296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission of electrons from boron- and nitrogen-doped diamond is compared. Emission from boron-doped diamond requires vacuum electric fields of 20–50 V μm−1, while nitrogen-doped, type Ib diamond requires fields of 0–1 V μm−1. Since boron-doped diamond is very conductive, very little voltage drop occurs in the diamond during emission. Nitrogen-doped diamond is insulating, so during emission a potential of 1–10 kV appears in the diamond. This potential is a function of the back contact metal-diamond interface. A roughened interface substantially reduces the potential in the diamond and increases emission. The electrons are often emitted from the nitrogen-doped diamond as beamlets. These beamlets leave the surface of the diamond at angles up to 45° from the substrate normal. Although the vacuum field is small, these electrons have energies of several kV. It is unknown whether the electrons are accelerated to these energies in the bulk of the diamond, or at high electric fields near the emitting surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116168
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    High-conductance, low-leakage diamond Schottky diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 952-954 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H2, or O2 result in high surface leakage, while plasmas formed from N2 or from CF4 with 8.5% O2 result in total leakage 〈1000 e/s. Annealing the diamond at 660 °C before the Schottky diode is fabricated causes an increase in the forward conductance with n-factors approaching one. This annealing removes a compensated subsurface layer that often occurs in diamond during normal processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109855
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effect of back contact impedance on frequency dependence of capacitance-voltage measurements on metal/diamond diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1065-1067 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Differential capacitance-voltage (C-V) measurements were performed on Al and Pt rectifying contacts fabricated on natural (type IIb) diamonds. The C-V data showed frequency dependence, which decreased significantly after reducing the back contact impedance. The frequency dependence seems primarily to be an effect of the contact capacitance, contact resistance, and bulk resistance of diamond. A model which includes these variables has been proposed to explain this frequency dependence using both large and small back contact impedances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109834
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...