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  • 1
    Electronic Resource
    Electronic Resource
    Hole mass determination in ZnSe by observation of standing polariton waves (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4049-4051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interference pattern due to standing polariton waves have been observed in thin planparallel ZnSe layers. The samples consist of pseudomorphic ZnSe/ZnCdSe quantum well structures grown by molecular beam epitaxy with cap layers of various thicknesses. The interference pattern appearing in reflectance and photoluminescence excitation spectra were fitted to calculated spectra applying a simple theoretical model. This fit results in the determination of the deadlayer thickness and the evaluation of the Luttinger parameter γ1 and γ2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363365
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4124-4131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on reflected high-energy electron-diffraction and transmission electron microscopy plane-view investigation of the dislocation structure in doped and undoped ZnSe/GaAs(001) grown by molecular-beam epitaxy and metal-organic vapor-phase epitaxy. The thicknesses of the investigated layers vary between 60 and 900 nm. Several stages of dislocation formation are found which occur at distinct layer thicknesses. Frank partial dislocations (up to 500 nm), Shockley partial dislocations (between 130 and 400 nm) with a maximum density at 300 nm, and perfect 60° dislocations (above 300 nm) are observed in samples with perfectly smooth surface. The formation of Shockley partial dislocations is strongly anisotropic which might be due to the higher mobility of α-type dislocations. An increased roughness of the growing surface yields a suppression of Shockley partial dislocations and an irregular dislocation network with dislocations inclined to the 〈110〉 directions. A regular dislocation network with straight dislocations is found in Cl-doped samples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361776
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  • 3
    Electronic Resource
    Electronic Resource
    High-resolution x-ray diffractometry of ZnTe layers at elevated temperatures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 862-867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-temperature multicrystal x-ray diffractometer is used for measurement of elastic constants c11, c12 and the thermal-expansion coefficient of a heteroepitaxial ZnTe layer grown on a (001) oriented GaAs substrate. In addition to the standard double-crystal measurement, a new triple-crystal method is proposed. This method eliminates the angular instabilities of the high-temperature goniometer and bending of the substrate. The new method was used for determination of the thermal-expansion coefficient of a GaAs substrate. As a result of detailed discussion, the optimal experimental conditions are proposed for the limitation of the errors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360276
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  • 4
    Electronic Resource
    Electronic Resource
    Exciton recombination in Te-rich ZnSexTe1−x epilayers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6178-6185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSexTe1−x epilayers were investigated by means of luminescence, reflectivity, and temperature dependence in the concentration range 0〈x〈0.4. The studied ZnSexTe1−x epilayers with thicknesses of about 1.5 μm were grown on GaAs substrates by metalorganic vapor phase epitaxy. It was found that the luminescence and reflectivity spectra of the mixed crystals are strongly affected by the compositional disorder. A continuous transition from the recombination through free and bound exciton states to the recombination of excitons localized by the compositional fluctuations of the mixed crystal was observed in the concentration region of about x=0.25. The position of the excitonic band edge was derived from the photoluminescence excitation spectra and from temperature dependence of the emission spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355186
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  • 5
    Electronic Resource
    Electronic Resource
    Luminescence due to lattice-mismatch defects in ZnTe layers grown by metalorganic vapor phase epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2581-2583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sharp and intense emission bands with the maxima of 2.185 and 2.150 eV and a weak phonon coupling were investigated in the heteroepitaxial ZnTe layers. The study of the ZnTe layers grown on different substrates with thicknesses of 0.5–3.2 μm has shown that this luminescence is produced in the interface region that contains a high density of structural defects. The temperature dependence of these bands reveals the excitonic character of the recombination. We propose that the observed bands originate from the recombination of excitons localized at structural defects such as dislocations and associated defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353071
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of hot wall epitaxy grown ZnTe layers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3730-3734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single cyrstalline ZnTe layers have been successfully grown on (001) GaAs substrates by hot wall epitaxy at substrate temperatures between 280–370 °C. The vapor phase near the substrate surface was investigated by a quadrupole mass spectrometer. Transmission electron microscopy, reflectivity, and photoluminescence were used for growth optimization, impurity identification, and strain determination. The biaxial inplane strain is about ε(parallel)=−0.5% at the interface and ε(parallel) (320 °C)=−0.06% at the surface for thicknesses of 1–5 μm. Two luminescence peaks can be assigned to As and N.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352292
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of strain in metalorganic vapor-phase epitaxy grown ZnTe layers by optical methods (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 398-404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the strain in ZnTe epilayers grown by atmospheric-pressure metalorganic vapor-phase epitaxy on (001) GaAs and GaSb substrates. Reflectivity and absorption measurements are performed at 2 K using single-crystalline layers with thicknesses of 0.2–2 μm. The biaxial strain in the samples caused by the lattice mismatch of layer and substrate is deduced from the splitting of the degenerate heavy- and light-hole exciton. A polariton model is used to describe the reflectivity structure at the E0 gap and to determine the transverse exciton energies. The deformation potentials obtained from an analysis of the absorption structures are a=−5.5 eV and b=−1.4 eV. The critical thickness for ZnTe/GaSb is lower than 0.8 μm near thermodynamic equilibrium. It also slightly depends on growth temperature which has its optimum at 345 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350288
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  • 8
    Electronic Resource
    Electronic Resource
    Raman studies of the growth mechanism of ZnSe/GaAs(001) heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3916-3920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monocrystalline ZnSe/GaAs(001) heterostructures have been grown by atomic layer epitaxy with typical thicknesses up to 200 nm. The 1LO Raman spectrum of ZnSe and GaAs, respectively, was recorded in situ during growth interruptions. The spectra were analyzed with respect to Raman intensity, phonon frequency, and bandwidth. Two different growth modes are distinguishable: (i) The biaxial compressive strain in the epilayers is increased in the thickness range up to 40 nm due to lattice mismatch of the heterosystem. This can be interpreted as a transition from an initial 3D island to the 2D layer by layer growth. (ii) When larger thicknesses (40–170 nm) are reached the strain is constant and the 1LO Raman intensity from the epilayer and from the substrate oscillates significantly with thickness. These periodic oscillations are quantitatively described in the framework of interference-enhanced Raman scattering and verify the 2D growth mode in this thickness range. The crystalline quality and the final thickness of the samples were determined by transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354490
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  • 9
    Electronic Resource
    Electronic Resource
    Photoelectron spectroscopy of chalcopyrites and Zn based II–VI semiconductor heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2871-2875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated CuInSe2 surfaces as well as the interfaces of the systems ZnSe/CuInSe2 and ZnS/CuInSe2 by vacuum ultraviolet photoelectron spectroscopy with synchrotron radiation. The CuInSe2 substrates are prepared with a hydrogen plasma and show high quality surfaces suitable for further growth of ZnSe in order to determine the valence-band offset of ZnSe/CuInSe2. At the surface of CuInSe2 Se atoms have been replaced by Te or S atoms, so that CuInTe2 or CuInS2 surfaces were formed. We determined the valence-band offsets of CuInTe2/CuInSe2 and CuInS2/CuInSe2 to be ΔEvb(CuInTe2/CuInSe2)=(0.85±0.05)eV and ΔEvb(CuInS2/CuInSe2)=(0.87±0.05)eV. ΔEvb(ZnSe/CuInSe2)=−(0.5±0.1)eV is in good agreement with values from literature. Furthermore we have examined the interface ZnS/CuInS2 and obtained the valence-band offset ΔEvb(ZnS/CuInS2)=−(2.3±0.1)eV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368430
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  • 10
    Electronic Resource
    Electronic Resource
    Localized excitonic transitions in a ZnSe-Zn0.75Cd0.25Se double-superlattice grown by molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1688-1690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A group of well-defined exciton transitions from the localized states were observed in ZnSe-Zn0.75Cd0.25Se double-superlattice structure. The photoluminescence and photoreflectance have been employed to study the subband transitions at low temperatures. At 1.4 K, except the two ground states and two higher subbands of n=1 light-hole and n=2 heavy-hole excitonic transitions, other four peaks (A, B, C, and D) also were observed in wider-well superlattice. Those peaks were attributed to the excitonic transitions from n=2 heavy-hole subband due to the fluctuation of well-barrier interface. Another localized excitonic transition from narrower-well superlattice appeared as increasing the modulated intensity in photoreflectance spectra. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121153
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