Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 5225-5229
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
As-cut semiconducting InP wafers were submitted to Fe diffusion at high temperature. The subsequent electrical characterization showed that the wafers became semi-insulating, with resistivities well above 107 Ω cm and mobilities in the range of 3000–4000 cm2/V s. In this article a study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The photoconductivity, photoluminescence and resistivity mapping showed that the short range uniformity is improved with respect to typical as-grown Fe-doped InP. However, sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity which are believed to be associated to temperature gradients inside the annealing furnace. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1315327
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