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  • 1
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    Mobil mit schwerem biografischem Gepäck (2021)
    wbv Media | wbv Media
    Details
    Publication Date: 2023-02-02
    Description: Benachteiligte Jugendliche in der Berufsvorbereitung haben nur selten die Chance auf Auslandsaufenthalte, weil sie im Übergangssystem kaum vorgesehen sind. Das deutsch-dänische Projekt JUMP ermöglicht Jugendlichen mit "schwerem biografischen Gepäck" diese Erfahrung. Der Projektband stellt 10 Fallstudien vor, verknüpft mit wissenschaftlichen Einordnungen zur Übergangsförderung und zur Arbeit mit benachteiligten Jugend-lichen aus einer lebenswelt- und subjektorientierten Perspektive. Im Mittelpunkt der Fallstudien stehen die Berichte über Mobilitätserfahrungen, Verunsicherungen und Hoffnungen, die mit einem Auslandspraktikum zusammenhängen. Diese subjektive Perspektive jugendlicher Lebens- und Lernwelten ist in der pädagogischen Fachliteratur bisher wenig präsent. Auf der wissenschaftlichen Ebene werden pädagogische Praxisthemen wie Übergangsförderung benachteiligter Jugendlicher und europäische Förderprogramme sowie theoretische Fragen wie Differenzen zwischen normativen Setzungen und individuellen Möglichkeiten, Reproduktion sozialer Ungleichheit im Bildungssystem und Folgen europäischer Bildungspolitik angesprochen. Die Kombination aus Fallstudien und rahmender Theorie liefert einen wertvollen Beitrag für die systematische Reflexion von Bildungsungleichheit und Anregungen für die Förderung von Bildungsmobilität.
    Keywords: Social Science ; Sociology ; bic Book Industry Communication::J Society & social sciences::JH Sociology & anthropology::JHB Sociology
    Language: German
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    E-BOOK
  • 2
    Electronic Resource
    Electronic Resource
    Two new asymmetric epoxidation catalysts. Unusual stoichiometry and inverse enantiofacial selection (1984)
    s.l. : American Chemical Society
    The @journal of organic chemistry 49 (1984), S. 728-731 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00178a039
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electron mobility in krypton dense gas as functions of electric field strength, temperature, and density (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 6943-6947 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron mobilities μ were measured in dense gaseous krypton as a function of density normalized electric field E/n at 3.8≤n/1026 molecule m−3≤40 and 152≤T/K≤250. At each density a constant value of the mobility μ0 is attained at low E/n. At fields higher than a threshold (E/n)th μ first increased, passed through a maximum, and then decreased. In the saturated vapor nμ0 decreased with increasing (n,T) while at constant n, nμ0 increased with T. The density dependence of nμ0 is compared to the dielectric screening model of Baird [Phys. Rev. A 32, 1235 (1985)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457311
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  • 4
    Electronic Resource
    Electronic Resource
    Electrode reaction pathways for the reduction of chromium(III)-ammine complexes at mercury electrodes (1977)
    s.l. : American Chemical Society
    Inorganic chemistry 16 (1977), S. 2124-2127 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50174a064
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared absorption of Ir and IrSi thin films on Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 310-312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The infrared absorption of Ir and IrSi thin films on Si substrates has been determined by transmission and reflection measurements over the wavelength range 2.5–25 μm. Detailed analysis of the dependence of absorption at 4 μm on film thickness indicates that a thin boundary layer with lower absorption than Ir is present at the Ir/Si interface and that such a layer with lower absorption than IrSi is present at the IrSi/Si interface. The existence of the boundary layers has been confirmed by the detection of oxygen at the interfaces by Auger analysis. Absorption and Auger measurements give no evidence of boundary layer formation at Pt/Si or PtSi/Si interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100995
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  • 6
    Electronic Resource
    Electronic Resource
    Reduced-confinement antennas for GaAlAs integrated optical waveguides (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 420-422 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monolithically integrated reduced-confinement antennas are shown to produce reductions of 〉35% in the far-field beam divergence for radiation emitted from single-mode GaAlAs slab waveguides, yielding far-field beams as narrow as 8.2° FWHM along the direction perpendicular to the wafer surface. Reduced confinement of the guided mode near the output endface is achieved using a novel molecular beam epitaxy growth technique to produce a longitudinal variation in the refractive index and thickness of the waveguide film. Unlike present horn antennas, the reduced-confinement geometry has the distinct advantage of being compatible with two-dimensional antenna development.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102776
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  • 7
    Electronic Resource
    Electronic Resource
    Sequential Ar-O2 sputtering of Y2O3, BaF2, and CuO targets for preparation of Y-Ba-Cu-O superconducting films without wet-O2 annealing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2438-2440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Y-Ba-Cu-O (YBCO) films have been prepared by ex situ O2 annealing of multilayer films deposited on yttria-stabilized zirconia substrates by sequential rf diode sputtering of Y2O3, BaF2, and CuO targets, all of which are chemically stable. If sputtering is performed in an Ar ambient, the as-deposited films contain sufficient F to require its removal by annealing in wet O2 at about 800 °C or above before the superconducting YBCO phase can be formed by annealing in dry O2. However, sputtering in an Ar-O2 ambient greatly reduces the F content, making it possible to obtain the superconducting phase by annealing in dry O2 only. If the ambient contains about 20% O2, films with Tc (R=0)〉85 K can be prepared without wet-O2 annealing. The Ar-O2 process therefore has the potential for in situ preparation of superconducting YBCO films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102294
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  • 8
    Electronic Resource
    Electronic Resource
    Laser frequency offset synthesizer (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 66-68 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for servolocking the beat frequency between two lasers is described in which the lasers in effect replace the voltage-controlled oscillator in an indirect frequency synthesizer. The system is simple, relatively free from systematic frequency errors, and has good stability as characterized by Allan variance measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138476
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  • 9
    Electronic Resource
    Electronic Resource
    Real-time elimination of dead time and afterpulsing in counting systems (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2457-2459 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A data taking scheme is described in which two photomultipliers record photons from a light source. It is shown that if the chain of recorded events is chosen to alternate between the two detectors, first-order effects of dead time and afterpulsing present in the two individual detectors are eliminated. This alternating scheme results in the detection efficiency being halved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139926
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  • 10
    Electronic Resource
    Electronic Resource
    Tritertiarybutylaluminum as an organometallic source for epitaxial growth of AlGaSb (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1384-1386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new organometallic source, tritertiarybutylaluminum (TTBAl), has been used in growth of AlxGa1−xSb epilayers by low pressure organometallic vapor phase epitaxy. Ternary alloys were grown over the whole composition range 0〈x≤1 on GaSb and GaAs substrates from TTBAl, triethylgallium, and triethylantimony (TESb) or trimethylantimony (TMSb). All layers exhibited mirror surface morphologies. Photoluminescence was observed for layers with x〈0.2, the composition that corresponds to the indirect transition. The background of C and O in AlSb grown with TESb was ∼2×1018 and ∼6×1019 cm−3, respectively, and ∼1.5×1019 and ∼1.5×1019 cm−3, respectively, for AlSb grown with TMSb. All layers exhibited p-type conductivity with hole concentration increasing with x, and saturating ∼5×1018 cm−3 for x=1, which is about 10 times lower compared to layers grown with conventional Al sources. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115541
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