ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Tibet air shower array: results and future plan (2008)
    Institute of Physics
    Details
    Publication Date: 2008-07-01
    Print ISSN: 1742-6588
    Electronic ISSN: 1742-6596
    Topics: Physics
    Published by Institute of Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 2
    facet.materialart.
    Unknown
    State of the climate in 2018 (2019)
    In:  EPIC3Bulletin of the American Meteorological Society, 100(9), pp. SI-S305
    Details
    Publication Date: 2020-07-08
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER (OA)
  • 3
    Electronic Resource
    Electronic Resource
    Surface hardness enhancement in ion-implanted amorphous carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1480-1484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of producing carbon nitride has been studied by ion implantation into amorphous carbon. Thin films were formed with 100 keV N+ or 80 keV C+ ions at various target temperatures and ion doses. The apparent surface hardness measured by nanoindentation with load-displacement data shows an optimum value of 22.3±0.4 GPa with the ion dose of 2×1017 N+/cm2 implanted at −100 °C, while the hardness of the unimplanted amorphous carbon is 6.0±0.2 GPa. Self-implantation by carbon also produces similar hardness enhancement with a narrow temperature window. The maximum enhanced surface hardness is well correlated with the asymmetric diffuse peak at around 1500 cm−1 in Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363017
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Transient light absorption in polydiacetylene films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1779-1782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sign of the transient transmission in PDA 4BCMU film (polydiacetylene 4-butoxycarbonalmethylurethane) was experimentally investigated as a function of excitation wavelength and intensity. The observed decrease in the transient transmission (ΔT〈0) from 2.05 eV (605 nm)〈ωex〈2.16 eV (574 nm) is attributed to triplet absorption. The triplet is created by a two-photon absorption process followed by a fast fission process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363026
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Effect of pretreatment process parameters on diamond nucleation on unscratched silicon substrates coated with amorphous carbon films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 485-492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond nucleation on unscratched silicon substrates was investigated using a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were coated with thin films of amorphous carbon using a vacuum arc technique. The carbon-coated silicon substrates were pretreated with a methane-rich plasma at relatively low temperatures and were subsequently exposed to the diamond nucleation conditions. The significance of the pretreatment on the diamond nucleation density was examined by varying the methane concentration, chamber pressure, and exposure time. Scanning electron microscopy demonstrated that densely packed spherical nanoparticles on the pretreated surfaces played the role of diamond nucleation seeds. Raman spectroscopy analysis showed that the nucleation seeds consisted of nonhydrogenated carbon and that their structure was influenced by the pretreatment conditions. Transmission electron microscopy revealed that the nucleation seeds comprised disordered graphitic carbon and ultrafine diamond crystallites. Submicrometer films of good quality diamond possessing significantly higher nucleation densities (∼5×1010 cm−2) were grown from nanoparticles produced under optimum pretreatment conditions. The enhancement of the diamond nucleation density is mainly attributed to the formation of a large number of nanoparticles, which provided sufficient high-surface free-energy sites for diamond nucleation, in conjunction with their high etching resistance to atomic hydrogen stemming from the significant percentage of sp3 atomic carbon configurations, as evidenced by the presence of nanocrystalline diamond in the nanoparticle structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360855
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Self-defocusing of nanosecond laser pulses in ZnTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3340-3343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of self-defocusing in ZnTe across a range of wavelengths just below the band edge. By using nanosecond laser pulses, the transmitted spatial profiles and the optical limiting behavior are measured. We also compare the experimental results to a theory, which assumes that the self-refraction is caused by free carriers created by single-photon absorption. By fitting this theory to the experimental findings, the nonlinear refractive cross-sections are deduced. We find that the values of the nonlinear refractive cross-sections are in agreement with a band-filling model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356118
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Femtosecond photoinduced dichroism in polydiacetylene 4bcmu film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4288-4290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Femtosecond pulses were used to study the photoexcitation dynamics and transient photoinduced dichroism in polydiacetylene 4BCMU film. Ultrafast photoinduced dichroism and optical Kerr gate response were observed. These measurements allowed estimation of the diffusion constant (D∼0.1 cm2/s), nonlinear index of refraction (n2∼10−8 esu), and third-order susceptibility (Δχ(3)∼6 × 10−10 esu), in the film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360702
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Effect of amorphous carbon film structure on diamond nucleation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2720-2724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the structure of amorphous carbon films on diamond nucleation was investigated with a microwave plasma-enhanced chemical-vapor-deposition system. The films were synthesized on smooth silicon surfaces using a vacuum arc technique. Different film structures were obtained by varying the negative pulsed bias voltage from approximately zero to −1.0 kV. The maximum film density and etching resistance in a pure hydrogen plasma were obtained for a pulsed bias voltage equal to −200 V. It was determined that these films contained the highest percentage of tetrahedrally bonded (sp3) atomic carbon configurations. The carbon-coated substrates were first exposed to a low-temperature high-methane-concentration hydrogen plasma before initiating the diamond nucleation experiments. The higher nucleation density (∼3×109 cm−2) and better quality of diamond films corresponded to a pulsed bias voltage of −200 V. Increasing the magnitude of the negative pulsed bias voltage resulted in significantly lower nucleation densities and the formation of relatively larger particles. The enhancement of the diamond nucleation density for a pulsed bias voltage of −200 V is attributed to both the inherent high etching resistance of the produced amorphous carbon films, resulting from the high content of sp3 bonds, and the pretreatment process which yielded a high density of high-surface free-energy nucleation sites. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360069
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Correlations between CdTe/CdS/SnO2/glass solar cell performance and the interface/surface properties (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2151-2153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface and interface properties of CdTe/CdS/SnO2/glass heterojunction solar cells are studied by means of x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and optical reflectance (OR) techniques. First, n-type CdS layer was grown by solution growth technique on the SnO2 coated glass substrate and then the p-type CdTe was deposited on CdS by metal-organic chemical-vapor deposition. Despite many other efficiency limiting mechanisms in CdTe solar cells, this article shows that surfaces and interfaces play an important role in determining the cell efficiency. In an attempt to correlate the surface and interface properties to the cell performance, a series of CdTe/CdS solar cells with different conversion efficiencies were fabricated and analyzed. It was found that high efficiency cells possess Te-rich CdTe surface along with smooth interfaces, as revealed by XPS, SIMS, and OR measurements, while low efficiency cells display near stoichiometric or Cd-rich CdTe surface and abrupt interfaces. The impact and role of interface/surface properties on CdTe solar cell performance are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361041
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3163-3175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 26 cubic SiC (3C-Sic) films grown on (100) Si by way of chemical vapor deposition (CVD) with SiC film thicknesses ranging from 600 A(ring) to 25 μm have been studied by photoluminescence at 2 K. The "defect-related'' W band near 2.15 eV appears in very thin-film samples. The G band near 1.90–1.92 eV and its phonon side bands G1 and G2 are believed to be related to dislocations and extended defects. The ratio ρ of the intensities of the G band and the strongest nitrogen-bound exciton (N-BE) TO(X) line may be used as a figure of merit for crystalline perfection in CVD 3C-SiC films. General formulas for the band-gap shift due to an axial stress, including three special cases—hydrostatic pressure and uniaxial and biaxial stress—are derived and applied to the CVD 3C-SiC/Si system. An experimental relationship of stress in these epitaxial films of 3C-SiC as a function of depth is obtained. It is shown that a 1–3 μm transition layer greatly reduces the interface misfit strain. For films thicker than 3 μm the film stress decreases slightly with increase of film thickness. The effects of biaxial stress on the relative intensities of N-BE lines are experimentally studied. It is reported that biaxial stress in the SiC/Si system depresses the intensity of the no-phonon line as well as the TA, LA, and LO phonon transitions of the N-BE spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341532
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...