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  • 1
    Electronic Resource
    Electronic Resource
    Well-width dependence of the excitonic lifetime in strained III-V quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2077-2079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the excitonic lifetime on the well width in InGaAs/InP (unstrained), InGaAs/GaAs, and InGaAsP/InP strained quantum well heterostructures is investigated by time-resolved photoluminescence spectroscopy. We show that the main contribution to the lifetime variation comes from the change of the exciton binding energy. In the strained InGaAs/GaAs wells, the widest wells have a shorter lifetime than expected. We attribute this to the onset of plastic relaxation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351642
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  • 2
    Electronic Resource
    Electronic Resource
    Optical characterization of thermal mixing in quantum wells and heterostructures using a Green's function model (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7581-7584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple Green's function model of interface mixing in quantum wells that provides exact quantitative solutions for real structures. Examples are given of several important low-dimensional heterostructures. The model enables the energy of the band-edge optical transition to be predicted as mixing proceeds, so that optical characterization techniques such as photoluminescence or absorption provide a powerful tool for studying mixing and obtaining interdiffusion constants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347526
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  • 3
    Electronic Resource
    Electronic Resource
    Geometrical theory of critical thickness and relaxation in strained-layer growth (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3038-3045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the growth of pseudomorphic strained layers, the critical thickness is the thickness up to which relaxation does not occur and beyond which relaxation occurs by plastic deformation of the layer. Previous theories have concentrated on the strain energy and kinetics of dislocation formation. We present a purely geometrical argument which predicts critical thicknesses and also predicts how relaxation progresses with increasing thickness. We find that the critical thickness, in monolayers, is approximately the reciprocal of the strain. Some relaxation occurs abruptly at critical thickness, and further relaxation is hyperbolic with thickness. The model can also handle multilayer structures. If all the layers have the same sign of strain, the model predicts that relaxation will occur at the lowest interface. These results are found to be in good agreement with experimental observations of dislocations in epitaxial structures of InGaAs grown on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349335
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  • 4
    Electronic Resource
    Electronic Resource
    Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3782-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion in InGaAs/GaAs quantum wells has been studied using photoluminescence to follow the development of the diffusion with time in a single sample. Two distinct regimes are seen; a fast initial diffusion and a second steady-state diffusion. The steady-state diffusion was found to be dependent on the depth of the quantum well from the surface and to correlate with published data on the indiffusion of gallium vacancies into gallium arsenide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352884
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  • 5
    Electronic Resource
    Electronic Resource
    Laminated gaskets for absorption and electrical measurements in the diamond anvil cell (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5760-5763 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed gaskets laminated from two layers of steel both for optical absorption and for electrical measurements in the diamond anvil cell. For absorption, these gaskets provide masking around the sample, avoiding the need for imaging of the gasket hole. For electrical measurements, laminated gaskets avoid the need for specially prepared diamonds as the feedthrough wires are not in contact with the anvils. Using argon as a pressure medium, both techniques have been used up to about 50 kbar at 300 and at 10 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143359
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  • 6
    Electronic Resource
    Electronic Resource
    Soldering diamonds into the diamond anvil cell (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1660-1661 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Diamonds can be obtained with a metal coating suitable for soldering to metal components. This provides a satisfactory method for mounting the anvils in diamond anvil high-pressure cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142453
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  • 7
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Analysis of high-resolution x-ray diffraction in semiconductor strained layers' " [J. Appl. Phys. 87, 8212 (2000)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8215-8215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The author of the comment is confused about a paradox and a philosophical error he identifies in our multivariate linear regression analysis of data. In this response, we clarify the issue, showing that the alleged paradox arises equally in a single-variate regression analysis and even in the use of repeated measurements to give a mean and standard deviation. We clarify also the question of best choices of reflections. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373525
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  • 8
    Electronic Resource
    Electronic Resource
    Analysis of high-resolution x-ray diffraction in semiconductor strained layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 782-790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition and strain of pseudomorphic epitaxial layers is measured by high-resolution x-ray diffraction. Rocking curves or reciprocal space maps are measured from several reflections from sets of lattice planes, and their peak positions combined to yield the physical parameters of interest. We show here that the peak positions are best evaluated as the centres of gravity of the peaks. These data are then analyzed using least-squares multiple linear regression. This gives best estimates of the values and the errors of the physical parameters. The analysis also provides guidance as to the best sets of reflections to measure. Asymmetric reflections are preferable to symmetric reflections; but if symmetric reflections are used then the asymmetric reflections with high angle of incidence are more valuable than with low angle of incidence. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370805
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  • 9
    Electronic Resource
    Electronic Resource
    Diamond-anvil uniaxial stress cell (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 489-493 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A diamond-anvil cell, normally used for generating high hydrostatic pressure, serves as an excellent uniaxial stress cell. We demonstrate this by using a standard cell to apply up to 6 kbar uniaxial stress, nearly twice the stress previously reported in the literature, to semiconductor laser diodes. Contacting to the laser devices between the diamond anvils is shown to be feasible for various laser structures and orientations. The experimental apparatus to apply force to the diamond anvils is described. Examples are given showing the application of uniaxial stress, in both the (001) and (110) crystallographic directions, to oxide-defined broad area stripe laser and ridge wave guide laser devices. The results suggest that a diamond anvil cell specifically designed for the low forces required for uniaxial stress generation would be a valuable instrument. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146626
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  • 10
    Electronic Resource
    Electronic Resource
    Interpretation of double-crystal x-ray rocking curves in relaxed strained-layer structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3011-3015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-crystal x-ray rocking curves from metamorphic epitaxial heterostructures are broadened by the presence of misfit dislocations and this vitiates the usual interpretation of rocking curves using simulation software. However, analysis of the moments of the rocking curve can be useful. Using single layers, we show that the first moment is equivalent to the peak splitting, so that the average strain and average composition of an inhomogeneous layer can be derived from its first moments. The usefulness of the method is demonstrated on complicated heterostructures including graded layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361295
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