Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2931-2933
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present the principle of a new photodetector based on the synchronous drift in a semiconductor of photogenerated carriers with a moving interference pattern. It provides a large detection volume which could be suitable for the optical generation of microwave signals. A theoretical analysis is detailed and followed by an experimental demonstration in a MBE grown GaAs layer illuminated with a moving interference pattern. We study the evolution of the detected signal at frequency f=1.6 GHz as a function of applied electric field, carrier lifetime, and fringe period. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112536
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