ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Ge1-xMnx (x=0.05, 0.07, 0.11, 0.15, 0.19, 0.23, 0.26, 0.29) thin films were prepared bymagnetron sputtering. All the films had a Ge cubic structure, and no indication of a secondary phasewas found in any sample using X-ray diffraction (XRD). The crystal lattice constant increases withthe Mn concentration, in accordance with Vegard's law. No films show clear magnetic domainstructure under a magnetic force microscope (MFM). Atom force microscope (AFM) measurementsshow that all films have a uniform particle size distribution, and a columnar growth pattern. X-rayphotoelectron spectroscopy (XPS) measurements indicate that the Mn atoms are not singlely in thebivalent. Electrical transport properties show that the resistance of the films increases withincreasing Mn concentration, suggesting that the Mn ions are in deep-level acceptor states, whileresistance decreases with increasing temperature, which is a typical semiconductor property
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.47-50.570.pdf
Permalink