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  • 1
    Electronic Resource
    Electronic Resource
    Low energy ion etching of aluminum oxide films and native aluminum oxide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5467-5470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum oxide films were etched using low energy argon ions generated by a microwave electron cyclotron resonance (ECR) source argon plasma. The argon ion energies were controlled by biasing substrates placed on a 13.56 MHz capacitively coupled electrode. Reactively sputtered aluminum oxide films were used to study the relationship between the dc bias applied to these substrates and the etch rate of their films. In situ x-ray photoemission spectra of the Al 2p and O 1s transitions showed that the ECR plasma was effective in completely removing native aluminum oxide and adventitious hydrocarbon in 1 min at ion energies as low as 100 eV. This preclean technology did not change the dielectric breakdown distribution of antenna structures with 12-nm-thick gate oxide capacitors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351990
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  • 2
    Electronic Resource
    Electronic Resource
    Removal of native silicon oxide with low-energy argon ions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3970-3972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance argon plasmas have been used to clean native silicon oxide at low (≈100 eV) ion energies. In situ x-ray photoelectron spectroscopy (XPS) allowed us to evaluate the effectiveness of this process by studying the Si 2p and O 1s photoemission spectra. Results indicate complete and rapid removal of chemically bound oxygen to silicon and the presence of small levels of adsorbed or interstitially implanted oxygen. Implanted argon was detected by XPS; however, the concentration appears to be greatly reduced by operating under low substrate bias conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349160
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of the electrical resistivity of reactively sputtered TiN films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4462-4467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical resistivity of reactively sputtered TiN films was measured as a function of film thickness. The effect of directionality of the sputtered atoms, substrate temperature, bias voltage, deposition rate, and film morphology on the electron conductivity in TiN films was studied. The combination of rapid deposition rate and high substrate temperature with bias-collimated sputtering results in TiN films with the lowest resistivity, 45 μΩ cm, the largest temperature coefficient of resistance, 1355 ppm, and the highest superconducting transition temperature, 5.04 K. These films are characterized by small grains with mixed 〈111(approximately-greater-than) and 〈200(approximately-greater-than) orientation and reduced electron scattering with an estimated electron mean-free path of 96 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352785
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray photoemission analysis and electrical contact properties of NF3 plasma cleaned Si surfaces (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3718-3725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The removal of native silicon oxide on 〈100(approximately-greater-than) silicon with an electron cyclotron resonance (ECR) excited NF3 plasma is demonstrated. In situ x-ray photoemission spectroscopy verifies removal of the oxide and shows that a residue remains on the surface after exposure to the plasma. The residue is about 1.2 nm thick with the approximate formula Si6F8ON2 when analyzed with a uniform overlayer model. X-ray photoemission spectra of the residue show fluorine and oxygen in at least two different bonding states and a unique nitrogen having a diamagnetic bond. Chemical bonding in the residue is ascribed to Fx-Si, Fx-Si-O, Si-O-Si, and N2-O-Si species, where x=1, 2, and 3. A distinct high-energy peak is identified in the quasicore level F 2s transition that is attributed to a small amount of interstitial fluorine having diffused into the silicon lattice. The residue is stable at room temperature in both vacuum and under hydrogen, but when exposed to room ambient, it and the substrate appear to oxidize accounting for a loss of both fluorine and nitrogen. Heating the residue to 640 °C in vacuum causes a significant loss of fluorine and nitrogen also. A possible mechanism accounting for the formation of the residue is proposed assuming that there is a difference in the decay time of the atomic species in the plasma. The ECR cleaning process is integrated into a sputtered TiN/Ti metallization sequence to show the effect of in situ chemical and physical plasma cleaning methods on the electrical contact properties of devices with submicron dimensions and high-aspect ratios. The specific contact resistance of Ti to n+-polycrystalline Si and to TiSi2/n+-, p+-〈100(approximately-greater-than) Si is found comparable to that achieved with an ECR excited Ar plasma cleaning where a surface residue is not produced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352320
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  • 5
    Electronic Resource
    Electronic Resource
    Plasma cleaned Si analyzed in situ by x-ray photoelectron spectroscopy, secondary ion mass spectrometry, and actinometry (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1001-1009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon surfaces are cleaned in an electron cyclotron resonance excited hydrogen plasma and characterized by in situ x-ray photoelectron spectroscopy and in situ static secondary ion-mass spectrometry. Emission spectroscopy and actinometry are used to characterize the hydrogen plasma. Exposure to the plasma for 3 to 4 minutes without applying heat or bias to the substrate completely removes the native silicon oxide resulting in a hydrogen terminated surface that is resistant to reoxidation. Adventitious hydrocarbon, when present on the surface, is also completely removed by the plasma. A shift in the isotope ratios of silicon suggests that a clean 〈100〉 silicon surface is monohydride terminated, whereas a 〈111〉 silicon surface appears largely dihydride terminated. A depth profile of the silicon isotope ratios shows a temporal instability, which with the assignment of a H 1s state in the valence-band spectra provides evidence that the hydrogen is concentrated at the surface and has not diffused deep into the silicon lattice. The oxygen removal rate has the following characteristics: two distinct microwave operating regimes separated by a discontinuity in power around 600 W; a singularity corresponding to rapid oxygen removal at 2.5 mTorr; an abrupt and near monotonic decrease in oxygen removal above 14 mTorr; and an invariance of the removal rate to ion-energy from about 10 to 100 eV. The density of hydrogen excited species and the ground state hydrogen atom density are correlated with the oxygen removal rate under all conditions except high pressure, where the density of hydrogen ions is low. This suggests an ion-induced etching mechanism whereby the native silicon oxide removal is enhanced with low-energy hydrogen ion bombardment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351373
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray photoemission spectra of reactively sputtered TiN (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6079-6085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectra of reactively sputtered TiN1.0 films are recorded without interference from adsorbed contaminants or ion sputter cleaning damage. In this way, the transition from hcp TiN0.3 to fcc TiN1.0 is characterized by a discontinuity in film stoichiometry, Ti 2p splitting energy, and Ti 2p3/2 binding energy as a function of the Ar/N2 ratio during sputtering. The line shapes of the N 1s and 2s transitions experience only an asymmetric broadening on forming fcc TiN. The core-level N 1s transition of fcc TiN is modeled as two components peaks with binding energies at 396.8 and 396.0 eV. Similarly, the valence band N 2s transition has corresponding component peaks at 16.8 and 16.2 eV. These high and low binding energy pairs are interpreted as on-site Ns and interstitial site Ni populations of nitrogen in a fcc TiN lattice, respectively. The ratio of N/Ti is 1.0 and the Ns/Ni ratio is approximately 6. Both ratios are independent of the composition of the sputtering gas mixture and the substrate temperature once fcc TiN is formed. The core level Ti 2p transition in fcc TiN is characteristic of a single Ti3+ oxidation state with a line shape that is also insensitive to the gas composition and the substrate temperature during sputtering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350465
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  • 7
    Electronic Resource
    Electronic Resource
    Removal of fluorocarbon residue on Si with an electron cyclotron resonance excited Ar plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1712-1717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron cyclotron resonance-excited Ar plasma completely removes CFx residue on Si resulting in a clean surface that is free of native Si oxide. In situ x-ray photoelectron spectroscopy verifies the absence of C and F on the surface, and the presence of what is thought to be a small amount of adsorbed or interstitially implanted O. Mechanistically, the Ar ion bombardment affects a nearly instantaneous ablation of F from the CFx surface followed in succession by a low average energy (100 eV) sputtering of the C-rich remnant, the native Si oxide, and the Si substrate. The etching rate of thick CFx residue is approximately 15 nm/min without any heat applied to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349541
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  • 8
    Electronic Resource
    Electronic Resource
    Reduction of interfacial tunnel defects in silicon due to chemical vapor deposition of tungsten (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 602-604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is reported for reducing tunnel formation in p+-n Si, and a correlation is shown between tunnel defects and junction leakage. 11B+-implanted Si annealed for 30 min at 900 °C in N2 and subsequently deposited with W forms a high density of filamentary tunnel defects extending on the order of 0.1 μm from the W/Si interface. Reverse-bias leakage of 0.33-μm-deep junctions is −90 nA/cm2 at −5 V and the forward-bias ideality is 1.24 over eight decades of current. By contrast, for 11B+-implanted Si oxidized for 7 min in steam, tunnels if present are less than 0.01 μm in length. The reverse-bias leakage is −0.3 nA/cm2 at −5 V and the forward-bias ideality is 1.00. The 2×1019 cm−3 interfacial carrier concentration is the same for both deposits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98360
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  • 9
    Electronic Resource
    Electronic Resource
    Range distributions of 11B+ in Co, CoSi2, Ti, and TiSi2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 607-609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range distributions of 10–120 keV 11B+ in polycrystalline Co, Ti, CoSi2, and TiSi2 targets have been measured by secondary ion mass spectrometry. The obtained projected ranges Rp and projected range stragglings ΔRp are within 25% and 10%, respectively, of those predicted using the Monte Carlo computer program trim. By comparison the one-dimensional Boltzmann transport calculation in suprem-3 tends to overestimate Rp by as much as 300% at the highest ion energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341949
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of post-silicidation annealing on TiSi2/p+-n Si junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1882-1886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse-bias leakage of TiSi2/p+-n Si junctions is 〈10 nA/cm2 for 0.1-μm-deep p+-Si with a TiSi2 sheet resistance of 1.7 Ω/sq, and is essentially independent of carrier concentration, and the amount of B consumed during silicidation. Forward-bias current characteristics show that the TiSi2 contacts are ohmic with significant recombination currents and high-level injection at voltages below the series resistance limit. Post-silicidation annealing for 30 min at 920 °C, with or without an overlayer of borophosphosilicate glass, increases the majority-carrier concentration and does not cause B to diffuse out of the Si. Also, minority-carrier lifetimes show a twofold increase after annealing and this results in nearly ideal junctions with leakage that is dominated by diffusion currents. Thus, TiSi2/p+-n Si is thermally stable under conditions that are compatible with glass flow and reflow processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339573
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