Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 4182-4185
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The use of chemical-beam expitaxy instead of chemical vapor deposition allows the incorporation of thermal atomic beams for doping. Dopant profile measurements by a differential capacitance-voltage technique and secondary ion mass spectroscopy technique show that there is no surface segregation with Si dopants in InP at all growth temperatures (〈600 °C). On the other hand, Sn and to a lesser extent Be show surface segregation which can be reduced by growing the InP at a lower temperature (〈550 °C). From this study, it is seen that Si should be preferred as the n-type dopant in producing InP/InGaAs high electron mobility transistors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337503
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