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  • 1
    facet.materialart.
    Unknown
    University of Michigan Press | U OF M CENTER FOR SOUTH ASIAN STUDIES
    Publication Date: 2024-03-29
    Description: K. C. Das is deservedly one of the most celebrated writers in India today. He writes primarily in Oriya, the language of his native state of Orissa, where he was born in 1924. A civil servant by profession, Das pursued a second career as a writer of stories, poems, and essays. The stories in this collection take place in an urban setting. The characters are mainly middle class, making them more accessible to North American readers than other examples of contemporary Indian fiction. These are not simple stories. They are about “divides,” about gaps between realities and imagination. In complex shifts between direct dialogue, interior monologue, and interior or imagined dialogue, Das lovingly but mercilessly exposes his characters' thoughts, self-deceptions, and the games they play with each other. These are stories about human weaknesses, the fallibility of human relationships, and the strategies we adopt to cope with our failures. They are about coming to terms with unpleasant, sometimes shocking truths about ourselves and others.
    Keywords: Sociology and anthropology ; thema EDItEUR::J Society and Social Sciences::JH Sociology and anthropology
    Language: English
    Format: image/jpeg
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  • 2
    Publication Date: 2024-04-22
    Description: The Global Consortium for the Classification of Fungi and fungus-like taxa is an international initiative of more than 550 mycologists to develop an electronic structure for the classification of these organisms. The members of the Consortium originate from 55 countries/regions worldwide, from a wide range of disciplines, and include senior, mid-career and early-career mycologists and plant pathologists. The Consortium will publish a biannual update of the Outline of Fungi and funguslike taxa, to act as an international scheme for other scientists. Notes on all newly published taxa at or above the level of species will be prepared and published online on the Outline of Fungi website (https://www.outlineoffungi.org/), and these will be finally published in the biannual edition of the Outline of Fungi and fungus-like taxa. Comments on recent important taxonomic opinions on controversial topics will be included in the biannual outline. For example, ‘to promote a more stable taxonomy in Fusarium given the divergences over its generic delimitation’, or ‘are there too many genera in the Boletales?’ and even more importantly, ‘what should be done with the tremendously diverse ‘dark fungal taxa?’ There are undeniable differences in mycologists’ perceptions and opinions regarding species classification as well as the establishment of new species. Given the pluralistic nature of fungal taxonomy and its implications for species concepts and the nature of species, this consortium aims to provide a platform to better refine and stabilise fungal classification, taking into consideration views from different parties. In the future, a confidential voting system will be set up to gauge the opinions of all mycologists in the Consortium on important topics. The results of such surveys will be presented to the International Commission on the Taxonomy of Fungi (ICTF) and the Nomenclature Committee for Fungi (NCF) with opinions and percentages of votes for and against. Criticisms based on scientific evidence with regards to nomenclature, classifications, and taxonomic concepts will be welcomed, and any recommendations on specific taxonomic issues will also be encouraged; however, we will encourage professionally and ethically responsible criticisms of others’ work. This biannual ongoing project will provide an outlet for advances in various topics of fungal classification, nomenclature, and taxonomic concepts and lead to a community-agreed classification scheme for the fungi and fungus-like taxa. Interested parties should contact the lead author if they would like to be involved in future outlines.
    Keywords: Plant Science ; Ecology ; Evolution ; Behavior and Systematics
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 14 (1971), S. 1021-1021 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2208-2212 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low resistance ohmic contacts have been formed on diamond films using bilayer structures of TiC/Au or TaSi2/Au. The initial films of TiC or TaSi2 were sputter-deposited from preformed targets. The overlying Au film was deposited by e-beam evaporation. Contact resistivities of the order of 10−5 Ω cm2 were obtained for the as-deposited layers. It was observed that the contact resistivity can only be marginally modified upon vacuum annealing at a temperature of 850 °C. In the more conventional approach of forming ohmic contacts using Ti/Au, a post-deposition anneal at a temperature of 850 °C is essential in order to obtain low contact resistivities. However, during this anneal procedure, a substantial amount of O is taken up by the Ti layer resulting in the formation of mixed oxide phases of Ti in addition to the interfacial TiC. In contrast, it has been demonstrated that the oxide formation can be avoided by sputter depositing the initial layer of either TiC or TaSi2 instead of elemental Ti. Moreover, in the case of the TaSi2/Au contact, the Au film is most probably lost due to a eutectic formation with Si. In this respect, the annealed TiC/Au contact appears satisfactory.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4229-4231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of aging of Al–SiO2–Si tunnel diodes is investigated. A theoretical model is proposed based on the assumption that aluminum undergoes a chemical reaction with the SiO2 layer and produces silicon which introduces active centers for trapping electrons in the oxide layer. The model shows that the negative charge density that develops at the interface is responsible for the time dependence of the barrier height observed in Al–SiO2–Si tunnel devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3934-3937 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct growth of GaAs by molecular-beam epitaxy on nominally (100)-oriented silicon with a buried implanted oxide is demonstrated. Nomarski interference contrast optical microscopy, transmission electron microscopy, and Rutherford backscattering techniques have been employed to characterize these layers. The formation of hillocks and a uniform layer of GaAs in the intervening regions between hillocks have been observed. Microtwins and threading dislocations are the predominant defects in these layers. Furthermore, we report the absence of antiphase domain boundaries within the GaAs hillocks.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 922-929 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mesa structure junction diodes prepared via high-temperature ion implantation of Al+ (100 keV, 4.8×1014 Al/cm2) in n-type or N+ (90 and 180 keV, 0.9 and 1.3×1014 N/cm2) in p-type β-SiC thin films were electrically characterized as a function of temperature using current-voltage and capacitance-voltage measurements. In either case, rectification was observed to the highest measurement temperature of 673 K. Closer examination of the device current-voltage characteristics yielded diode ideality factors greater than 2. Additionally, the log dependence of these two parameters indicated space-charge-limited current in the presence of traps as the dominant conduction mechanism. From the temperature dependence of log-log plots, trap energies and densities were determined. Two trapping levels were observed: (1) 0.22 eV with a density of 2×1018 cm−3 and (2) 0.55 eV with a density of 2×1016 cm−3. The former is believed to be ionized Al centers (in the case of Al-implanted sample) and the latter a compensating acceptor level, both of which lie within the bottom third of the band gap. Reverse currents at low biases were characteristic of generation in the depletion region. At intermediate biases an ohmic dependence was observed, whereas at high biases the current appeared to be space-charge limited. Capacitance-voltage measurements indicated both types of diodes were abrupt junctions.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1179-1187 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-resistance ohmic contacts have been fabricated on a naturally occurring B-doped diamond crystal and on polycrystalline diamond films by B ion implantation and subsequent Ti/Au bilayer metallization. A high B concentration was obtained at the surface by ion implantation, a post-implant anneal, and a subsequent chemical removal of the graphite layer. A bilayer metallization of Ti followed by Au, annealed at 850 °C, yielded specific contact resistance (ρc) values of the order of 10−5 Ω cm2 for chemical vapor deposition grown polycrystalline films and the natural IIb crystal. The ρc values from transmission line model measurements on three different contact configurations, namely, standard rectangular pads, rectangular pads on diamond mesas, and three-ring circular structures have been compared. These contacts were stable to a measurement temperature of ∼400 °C and no degradation due to temperature cycling was observed. Chemical analysis by x-ray photoelectron spectroscopy (XPS) in conjunction with Ar+ sputter depth profiling of the annealed samples indicated that the Au overlayer was not effective in preventing oxidation of the underlying Ti. The XPS study also indicated the formation of TiC at the Ti/diamond interface.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3142-3148 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystal/material quality and electrical properties of B-doped diamond films synthesized by microwave plasma chemical vapor deposition were investigated. Raman spectroscopy verified the presence of diamond and indicated that the crystal quality increased with B doping. Secondary-ion mass spectroscopy showed that the B/C ratios in the films were larger than the B/C ratios in the gas phase, possibly due to differences in B and C sticking coefficients. Electrode patterns of Pt were fabricated on the films and electrical properties were investigated. On undoped diamond films with a residual B concentration of ∼5×1017 cm−3, these contacts were rectifying with small reverse leakage currents and on B-doped diamond films with a B concentration of 200 and 400 ppm, they yielded ohmic behavior. The temperature dependence of the resistivity showed that these doped films had activation energies, an order of magnitude smaller than that associated with the B impurity level in diamonds. The small activation energies associated with these heavily doped films suggest that an impurity band conduction plays an important role. Experimentally determined Hall mobility of the films was also interpreted qualitatively by an impurity band conduction mechanism and effects of grain boundaries and sp2 components on the transport properties are considered to be small for heavily doped films.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2721-2732 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reactive laser vaporization of palladium metal in the presence of H2(g) has been used to generate and trap neutral and charged palladium hydride radicals in neon and argon matrices for electron spin resonance investigations. The radicals identified are: 0PdH+2, 105PdH+2, 0PdD+2, 105PdD+2, 0PdH, 0PdD, 105PdH, and 105PdD. The electron spin resonance results prove that the H atoms are equivalent in PdH+2 but it cannot be determined for certain whether a highly bent 2A1 ground state complex or a linear 2Σ state is being observed, although the evidence seems to favor the 2A1 state. The observed nuclear hyperfine properties (A and g tensors) are best accounted for by assigning the unpaired electron predominantly to 4d2z/5s orbitals on the metal in PdH+2 with only about 3% of the spin density on each H atom. Electron spin resonance results for PdH constitute the first observations for a diatomic metal hydride radical trapped in a neon matrix. The magnetic parameters (MHz) for 105PdH+2 in a neon matrix at 4 K are: g⊥=2.568(2); g(parallel)(approximately-equal-to)1.92; A⊥(105Pd)=−713(2); A(parallel)(105Pd)=−688(15); A⊥(H)=45(1). Multireference SCF (MCSCF) and configuration interaction (CI) calculations were conducted for PdH+2 to calculate the energies and gross population distributions in the lowest-lying electronic states. The lowest of these, the 2A1 state, has a calculated stabilization energy of 9.3 kcal/mol relative to Pd+(4d9)+H2.
    Type of Medium: Electronic Resource
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