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  • 1
    Electronic Resource
    Electronic Resource
    Effects of current spreading under oxide current aperture in vertical-cavity surface-emitting lasers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4837-4840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss a buried oxide layer forming a current aperture in a vertical-cavity surface-emitting laser. The current spreading under the oxide current aperture leads to high threshold and dual-longitudinal-wavelength characteristics. One is the as-grown cavity resonance and the other is the resonance wavelength under the oxide layer. This structure exhibits (approximately-greater-than)30 dB side-mode suppression throughout its operating range. Meanwhile, a single-longitudinal-wavelength laser with a minimized current spreading has a low threshold current of 85 μA and several nonlasing modes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363525
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence study of critical thickness of pseudomorphic quantum wells grown on small area mesa stripes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 717-719 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic In0.18Ga0.82As single quantum wells (QWs) have been grown by metalorganic chemical vapor deposition (MOCVD) on patterned substrates with mesa sizes of 3.5 μm oriented along [110] and [11¯0] directions. Using a post-growth masking technique, photoluminescence (PL) has been used to characterize the optical properties of the as-grown QWs. Our results show the increase of the critical thickness by about 50% for growth on [110] undercut mesa as compared with that on the planar substrate due to the discontinuous growth behavior and no increase of critical thickness of [11¯0] oriented mesas due to the continuous growth behavior and outdiffusion of In from the facet wall of the groove to the mesa top.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104525
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  • 3
    Electronic Resource
    Electronic Resource
    Single-crystal α-GaN grown on a α-Ga2O3 template layer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1553-1555 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism for growth of single-crystal GaN on oxidized AlAs (AlOx) formed on a Si(111) substrate by metalorganic chemical vapor deposition has been studied. Cross-sectional transmission electron microscopy (XTEM) indicates that the grown GaN is single-crystal α-GaN in spite of the fact that the AlOx on which the GaN is grown is found to contain predominantly polycrystal γ-Al2O3. Reflection high-energy electron diffraction (RHEED) shows that oriented crystallized α-Ga2O3 is formed between AlOx and the GaAs cap layer during the oxidation process. The α-Ga2O3 acts as a growth template and results in the crystalline orientation of α-GaN on polycrystal γ-Al2O3. Further support for this template is derived from energy dispersive x-ray spectroscopy that shows the existence of Ga atoms on AlOx. Combined XTEM/RHEED analysis suggests that α-GaN is oriented in the growth direction as [0001]α-GaN(parallel)[0001]α-Ga2O3(parallel)[111]Si and the in-plane direction as [2110]α-GaN(parallel)[11(underbar)00]α-Ga2O3(parallel)[011(underbar)]Si, which can be understood by considering the misfit in the in-plane atomic separation at each interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122218
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  • 4
    Electronic Resource
    Electronic Resource
    Monolithically integrated surface and substrate emitting vertical cavity lasers for smart pixels (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 19-21 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The authors present a way to monolithically integrate surface—and substrate—emitting vertical cavity surface emitting lasers (VCSELs) on a single substrate for use in smart pixel applications. Spatially selective oxidation is used to adjust the reflectivity of distributed Bragg reflectors to fabricate surface and substrate emitting VCSELs with threshold currents of 65–70 μA, far field FWHMs of 9°–16°, and slope efficiencies of 16%–18%. Threshold currents and far field angles for various aperture dimensions are measured and discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121709
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  • 5
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 635-637 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lifetime of minority carriers in AlGaAs-GaAs quantum well structures grown by metalorganic chemical vapor deposition has been studied at room temperature and carrier densities up to 3×1016 cm−3 using time-resolved photoluminescence. Decay times are observed to be strongly dependent upon the quality of the AlGaAs barrier regions, excitation, and well width. Strong saturation of the decay times is observed with excitation indicating the presence of nonradiative traps. Saturated lifetimes as long as 650 ns have been measured in quantum wells with 200 A(ring) well widths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100902
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  • 6
    Electronic Resource
    Electronic Resource
    Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2845-2847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1.3 μm In1−xGaxAsyP1−y/InP lasers with compressive and tensile strained quantum wells have been found to lase in both transverse electric (TE) and transverse magnetic (TM) polarizations. Amplified spontaneous emission spectra indicate gain in both TE and TM modes. The relative magnitudes depend on device length and injection current. This structure can be used as a polarization insensitive optical amplifier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108052
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  • 7
    Electronic Resource
    Electronic Resource
    Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3108-3110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An InGaAs/GaAs quantum well (QW) disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathodoluminescence. The QW energy shift of thermally disordered regions containing buried oxide layer is ∼45 meV greater than that of regions not containing buried oxide layers. The disordering transition width is estimated to be ∼1 μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120261
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2836-2838 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach by which single crystal α-GaN can be grown laterally over oxidized AlAs (AlOx) formed on Si substrates is demonstrated. Regular α-Ga2-O3 stripe templates, spatially separated by AlOx, on which subsequent GaN growth is selectively seeded are formed. Since the boundary between the stripe template and AlOx is nominally planar, two pyramidal planes on separated GaN can merge by growing laterally over the AlOx (referred to as planar epitaxial lateral overgrowth). Transmission electron microscopy reveals that the number of structural defects in GaN laterally grown over the AlOx is remarkably reduced compared to that in GaN grown on the stripe templates, and accordingly cathodoluminescence reveals a strong band edge emission from GaN laterally grown over the AlOx, suggesting that this approach allows us to grow GaN on Si substrates with fewer defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124030
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  • 9
    Electronic Resource
    Electronic Resource
    Self-defined AlAs-oxide–current-aperture buried heterostructure vertical cavity surface-emitting laser (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1661-1663 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a promising technique to fabricate self-defined AlAs-oxide–current-apertures for vertical cavity surface-emitting lasers (VCSELs). A self-defined AlAs-oxide–current-aperture buried heterostructure VCSEL was fabricated using a three-step growth sequence. The active region mesa size was 10 μm×10 μm. The lowest threshold current of the lasers was 0.7 mA under continuous-wave operation at room temperature. The differential quantum efficiency was 32%. The lasers operate at temperatures of up to 50 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122238
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  • 10
    Electronic Resource
    Electronic Resource
    Ambipolar diffusion coefficient and carrier lifetime in a compressively strained InGaAsP multiple quantum well device (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 647-649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using the technique of noncollinear nearly-degenerate four-wave mixing, ambipolar diffusion coefficients and carrier lifetimes were directly determined for a compressively-strained InGaAsP multiple quantum well semiconductor optical amplifier operating at 1.3 μm. A diffusion coefficient of 8.0 cm2/s and a carrier lifetime of 1.33 ns, were obtained at the amplifier current density of 1.88 kA/cm2. The current-density dependent measurements show that the diffusion coefficient will drop with increasing amplifier pumping current, which is consistent with the prediction of the conventional semiconductor theory. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119817
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