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  • 1
    Electronic Resource
    Electronic Resource
    Multiple peak formation in reversed-phase liquid chromatography of papain (1984)
    s.l. : American Chemical Society
    Analytical chemistry 56 (1984), S. 217-221 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00266a022
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  • 2
    Electronic Resource
    Electronic Resource
    Maintaining the closed magnetic-field-line topology of a field-reversed configuration with the addition of static transverse magnetic fields (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2539-2545 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects on magnetic-field-line structure of adding various static transverse magnetic fields to a Solov'ev-equilibrium field-reversed configuration are examined. It is shown that adding fields that are antisymmetric about the axial midplane maintains the closed field-line structure, while adding fields with planar or helical symmetry opens the field structure. Antisymmetric modes also introduce pronounced shear. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874094
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  • 3
    Electronic Resource
    Electronic Resource
    Comparisons of experimental measurements and two-dimensional plasma-fluid numerical simulations of a magnetized plasma column (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 4250-4267 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density, the electron, ion, and neutral temperatures in dense (ne(approximately-greater-than)1013 cm−3) and cool (Te〈8 eV) magnetized helium plasma columns submerged in a cool neutral gas (n0∼3×1015 cm−3) environment have been measured. These plasmas, of similar collisionality to those expected in the scrape-off layer of ITER (International Thermonuclear Experimental Reactor) [R. Parker, Contrib. Plasma Phys. 34, 422 (1994)], are found to obey the low-recycling behavior of approximate plasma pressure balance along the column axis. Density decreases by a factor of about 2 and Te remains isothermal. Computer simulations using the B2 [R. Schneider et al., J. Nucl. Mater. 196–198, 810 (1992)] plasma-fluid code have been performed and are in good agreement with experimental results. Measured ion temperatures are consistent with classical energy transfer from the electrons. Neutrals within the plasma are heated by elastic and charge-exchange collisions. This set of measurements represents the most detailed comparisons between experimental results and B2 predictions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871555
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  • 4
    Electronic Resource
    Electronic Resource
    Instrument for measuring the momentum flux from atomic and charged particle jets (abstract) : Eighth topical conference on high—temperature plasma diagnostics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3148-3148 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an instrument to measure the momentum flux from an intense plasma stream for which the standard techniques used for low-pressure gases (〈10 Torr) at room temperature are unsuitable. This device, a plasma momentum meter, can measure forces of 10−5–103 Newtons with a response time of 〈50 ms onto surfaces of different materials immersed in dense plasmas (n(approximately-greater-than)1012 cm−3). Such forces are transmitted predominantly by ionic and neutral species, with 10's of eV's of kinetic energy, are accompanied by high heat fluxes, and are pulsed. The momentum flux onto a biasable target plate is transferred via a suspended quartz tube onto a sensitive force transducer, a capacitance-type pressure gauge. This protects the transducer from thermal damage, arcing, and sputtering. An absolute force calibration of the PMM to 1% accuracy has been made and is described. A flat carbon target has been used in measurements of the momentum flux of He, Ne, Ar, and Kr plasmas produced in a magnetized linear plasma device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141666
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  • 5
    Electronic Resource
    Electronic Resource
    An instrument for measuring the momentum flux from atomic and charged particle jets (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3586-3591 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an instrument to measure the momentum flux from an intense plasma stream for which the standard techniques used for low-pressure gases (〈10 Torr) at room temperature are unsuitable. With a response time of 〈 50 ms, this device, a plasma momentum meter, can measure forces of 10−5–103 N onto surfaces of different materials immersed in dense plasmas (n(approximately-greater-than)1012cm−3). Such forces are transmitted predominantly by ionic and neutral species, with 10's of eV's of kinetic energy, are accompanied by high heat fluxes, and are pulsed. The momentum flux onto a biasable target plate is transferred via a suspended quartz tube onto a sensitive force transducer, a capacitance-type pressure gauge. This protects the transducer from thermal damage, arcing, and sputtering. An absolute force calibration of the PMM to 1% accuracy has been made and is described. A flat carbon target has been used in measurements of the momentum flux of He, Ne, Ar, and Kr plasmas produced in a magnetized linear plasma device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141575
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  • 6
    Electronic Resource
    Electronic Resource
    Inactivation of Bacillus cereus .beta.-lactamase I by 6.beta.-bromopenicillanic acid: kinetics (1980)
    s.l. : American Chemical Society
    Biochemistry 19 (1980), S. 3990-3995 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00558a016
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  • 7
    Electronic Resource
    Electronic Resource
    Inactivation of Bacillus cereus .beta.-lactamase I by 6.beta.-bromopenicillanic acid: mechanism (1980)
    s.l. : American Chemical Society
    Biochemistry 19 (1980), S. 3996-4003 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00558a017
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  • 8
    Electronic Resource
    Electronic Resource
    Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 992-994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical and electrical characteristics of gallium (Ga) ion implanted 〈100〉 silicon, annealed for times of the order of seconds to several tens of seconds for temperatures in the range of 550–900 °C, are presented. It is shown that for the chosen doses of 1–6×1015/cm2 and energy of 100 keV highly electrically active p-type layers (approaching 100%) can be achieved. The highest activation being reached at temperatures below ∼650 °C with no profile distortion. For temperatures in excess of 800 °C this electrical activation decreases and significant profile movement occurs even for times as short as 2 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98786
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  • 9
    Electronic Resource
    Electronic Resource
    Transient boron diffusion in ion-implanted crystalline and amorphous silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1452-1463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion in ion-implanted and annealed single-crystal and amorphized Si is compared to determine the effect of amorphization on the initial transient boron motion reported for single crystal. The boron was implanted at 20 keV and at doses of 1×1015 and 3×1015cm−2. The Si was either preamorphized or postamorphized to a depth of 320 nm by implantation of Si ions at three different energies. In the amorphized samples the entire boron profile was always contained within this distance. The samples were annealed by furnace or rapid thermal annealing to 900–1100 °C with or without a preanneal at 600 °C. The initial rapid diffusion transient in the tail region of the boron profile was observed in all the crystal samples. This transient was totally absent in the amorphized samples. This is manifest by careful comparison of boron concentration profiles determined by secondary ion mass spectrometry of single-crystal and amorphized samples after annealing. For anneals where significant motion occurs, the profiles of the amorphized samples could be fit with a computational model that did not include anomalous transient effects. It is proposed that excess interstitials cause the transient diffusion in the case of the crystalline samples. The source of interstitials is believed to be provided by the thermal dissolution of small clusters that are formed by the implantation process. They exist for only a short time, during which they enhance the boron diffusion. Since there is no enhanced diffusion in the amorphous region that regrows to single crystal, apparently interstitial clusters are neither produced by nor do they survive the regrowth process in that region. In addition, the interstitials generated by the damage beyond the amorphous-crystalline boundary are prevented from entering the regrown region by the dislocation loops formed at that boundary which act as a sink consuming the interstitials diffusing toward the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339926
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  • 10
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of hydrogenated amorphous silicon grown at low temperature (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1425-1428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon with different levels of phosphorous doping has been deposited by plasma-enhanced chemical vapor deposition at a temperature of 125 °C. Its electrical properties are largely inferior to those of standard material grown at 275 °C, but they can be improved by a rapid thermal annealing process. The change in electrical conductivity depends on the doping level and is better for 0.1% than 1% or undoped samples. In this case the electrical conductivity, after annealing, increases by three orders of magnitude and is only a factor of 10 less than that of the best conducting material produced at 275 °C. The improvement in electrical properties is not causatively related to the loss of hydrogen. This low-temperature material, after annealing, forms relatively low resistance contacts with molybdenum or aluminum and is suitable for application in thin-film transistor technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339647
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