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  • 1
    Electronic Resource
    Electronic Resource
    Solid-state standard addition method in secondary ion mass spectrometry for improvement of detection limits (1982)
    s.l. : American Chemical Society
    Analytical chemistry 54 (1982), S. 2111-2113 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00249a047
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  • 2
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectrometric image depth profile analysis of thin layers (1982)
    s.l. : American Chemical Society
    Analytical chemistry 54 (1982), S. 2208-2210 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00250a017
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  • 3
    Electronic Resource
    Electronic Resource
    Quantitative determination of boron and phosphorus in borophosphosilicate glass by secondary ion mass spectrometry (1985)
    s.l. : American Chemical Society
    Analytical chemistry 57 (1985), S. 1071-1074 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00283a016
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  • 4
    Electronic Resource
    Electronic Resource
    Profile control in BF3 plasma doping (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3198-3201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma doping (PD) is an alternative technique to form shallow junctions in deep-submicrometer microelectronic devices. Previous studies have demonstrated that PD produces shallow junctions with better efficiency than those by conventional low energy beam-line doping (BD). In addition, even though cross-sectional transmission electron microscopy reveals that the surface layer is amorphized after high dose BF3 PD or BD implantation, PD samples show less residual defects after rapid thermal annealing. For ultrashallow junctions, doping profiles with a high dopant concentration near the surface are required for the formation of low resistant contacts. In this article, we demonstrate the use of nonideal voltage pulse shape in achieving advantageous doping profiles that are difficult to obtain via BD. By performing particle-in-cell (PIC) simulation, we derive the ion energy distributions for different sample voltage pulse shapes for BF3 PD. Comparison of the PD boron depth profiles simulated by PIC and an assumed Gaussian implant profile to the BD boron depth profiles simulated by TRIM shows a low energy component that does not exist in BD samples. The rise and fall time of the sample voltage pulse contributes to the overall energy distribution since a long rise or fall time increases the low energy component. We postulate that these low energy ions may also change the nature of the amorphized layer and are one of the reasons for the reduction of residual defects after rapid thermal annealing. The preferred sample voltage pulse for plasma doping is suggested to be a short one with a relatively long rise and fall time. This is something that is very difficult to achieve by beam-line ion implantation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288012
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  • 5
    Electronic Resource
    Electronic Resource
    Efficacy of high-frequency, low-voltage plasma immersion ion implantation of a bar-shaped target (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2221-2225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elevated-temperature plasma immersion ion implantation (PIII) increases the surface hardness and thickness of the modified layer and is traditionally performed at a high energy (typically above 5 keV) and low current density. In this article, we report the benefits of a different approach by high-frequency, low-voltage plasma immersion ion implantation (HLPIII). Experiments and a two-dimensional theoretical simulation are conducted to demonstrate the advantages of the process on a bar-shaped sample in terms of ion dose, dose uniformity, and modified layer thickness. Simulation of the sheath dynamics illustrates that the thinner plasma sheath in HLPIII is geometrically more conformal to the target surface, and the incident ion flux is more uniform along the exposed surface when compared to the traditional high-voltage PIII process. The higher ion dose and thicker modified layer can be attributed to the higher ion current density. HLPIII is thus the preferred technique to enhance the surface properties of large and complex-shaped specimens such as a metal track. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287221
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  • 6
    Electronic Resource
    Electronic Resource
    Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4214-4219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcavities formed by H+ and He+ implantation and subsequent annealing are effective gettering sites for transition metal impurities in silicon. However, gettering in silicon-on-insulator (SOI) materials is quite different from that in silicon. In this work, we investigate the gettering of Cu to these microcavities in silicon, separation by implantation of oxygen (SIMOX) and bonded/ion-cut SOI wafers. Our data indicate that He+ implantation in the high dose regime (0.2–1×1017 cm−2) creates a wide band of microcavities near the projected range without causing blistering on the sample surface. On the other hand, the implantation dose of H+ needed for stable microcavity formation is relatively narrow (3–4×1016 cm−2), and this value is related to the projected range. The different behavior of H and He in silicon is discussed and He implantation is more desirable with regard to impurity gettering. Cu is implanted into the surface region of the Si and SOI samples, followed by annealing at 700 and 1000 °C. Our results indicate that the microcavities can effectively getter a high dose of Cu (2.5×1015 cm−2) at 700 °C in bulk Si wafer, but higher temperature annealing is needed for the effective gettering in SIMOX. Gettering of Cu by the intrinsic defects at or beneath the buried oxide interface of the SIMOX is observed at 700 °C, but no trapped impurities are observed after 1000 °C annealing in the samples in the presence of microcavities. Almost all of the 1×1014 cm−2 Cu implanted into the Si overlayer of the bonded/ion-cut SOI diffuse through the thermally grown oxide layer and are captured by the cavities in the substrate after annealing at 1000 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371348
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  • 7
    Electronic Resource
    Electronic Resource
    Metallic contamination in hydrogen plasma immersion ion implantation of silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3743-3749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In plasma immersion ion implantation (PIII), ions bombard all surfaces inside the PIII vacuum chamber, especially the negatively pulsed biased sample stage and to a lesser extent the interior of the vacuum chamber. As a result, contaminants sputtered from these exposed surfaces can be reimplanted into or adsorb on the silicon wafer. Using particle-in-cell theoretical simulation, we determine the relative ion doses incident on the top, side, and bottom surfaces of three typical sample chuck configurations: (i) a bare conducting stage with the entire sample platen and high-voltage feedthrough/supporting rod exposed and under a high voltage, (ii) a stage with only the sample platen exposed to the plasma but the high-voltage feedthrough protected by an insulating quartz shroud, and (iii) a bare stage with a silicon extension or guard ring to reduce the number of ions bombarding the side and bottom of the sample platen. Our simulation results reveal that the ratio of the incident dose impacting the top of the sample platen to that impacting the side and bottom of the sample stage can be improved to 49% using a guard ring. To corroborate our theoretical results, we experimentally determine the amounts of metallic contaminants on 100 mm silicon wafers implanted using a bare chuck and with a 150 mm silicon wafer inserted between the 100 mm wafer and sample stage to imitate the guard ring. We also discuss the effectiveness of a replaceable all-silicon liner inside the vacuum chamber to address the second source of contamination, that from the interior wall of the vacuum chamber. Our results indicate a significant improvement when an all-silicon liner and silicon guard ring are used simultaneously. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404422
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  • 8
    Electronic Resource
    Electronic Resource
    Modeling of incident particle energy distribution in plasma immersion ion implantation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4961-4966 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma immersion ion implantation is an effective surface modification technique. Unlike conventional beam-line ion implantation, it features ion acceleration/implantation through a plasma sheath in a pulsed mode and non-line-of-sight operation. Consequently, the shape of the sample voltage pulse, especially the finite rise time due to capacitance effects of the hardware, has a large influence on the energy spectra of the incident ions. In this article, we present a simple and effective analytical model to predict and calculate the energy distribution of the incident ions. The validity of the model is corroborated experimentally. Our results indicate that the ion energy distribution is determined by the ratio of the total pulse duration to the sample voltage rise time but independent of the plasma composition, ion species, and implantation voltage, subsequently leading to the simple analytical expressions. The ion energy spectrum has basically two superimposed components, a high-energy one for the majority of the ions implanted during the plateau region of the voltage pulse as well as a low-energy one encompassing ions implanted during the finite rise time of the voltage pulses. The lowest-energy component is attributed to a small initial expanding sheath obeying the Child-Langmuir law. Our model can also deal with broadening of the energy spectra due to molecular ions such as N2〈sup ARRANGE="STAGGER"〉+ or O2〈sup ARRANGE="STAGGER"〉+, in which case each implanted atom only carries a fraction (in this case, half) of the total acceleration energy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319163
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  • 9
    Electronic Resource
    Electronic Resource
    Accurate determination of pulsed current waveform in plasma immersion ion implantation processes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3567-3570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports on the measurement of the ion current in plasma immersion ion implantation. Our simulation results indicate that the total current peaks at the end of rise time of the applied voltage. However, our experimental data acquired using a Rogowski coil and digital oscillator show the highest current at the beginning of the voltage pulse. The discrepancy can be explained by a displacement current attributable to the changing voltage, sheath capacitance, circuit loading effects, as well as secondary electron emission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371259
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  • 10
    Electronic Resource
    Electronic Resource
    Particle-in-cell and Monte Carlo simulation of the hydrogen plasma immersion ion implantation process (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1817-1821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen plasma immersion ion implantation into a 200-mm-diam silicon wafer placed on top of a cylindrical stage has been numerically simulated by the particle-in-cell (PIC) and transport-and-mixing-from-ion-irradiation (TAMIX) methods. The PIC simulation is conducted based on the plasma comprising three hydrogen species H+, H2+, and H3+ in a ratio determined by secondary ion mass spectrometry. The local sputtering losses and retained doses are calculated by the Monte Carlo code TAMIX. The combined effect of the three species results in a maximum retained dose variation of 11.6% along the radial direction of the wafer, although the implanted dose variation derived by PIC is higher at 21.5%. Our results suggest that the retained dose variations due to off-normal incident ions can partially compensate for variations in incident dose dictated by plasma sheath conditions. The depth profile becomes shallower toward the edge of the wafer. Our results indicate that it is about 34% shallower at the edge, but within a radius of 6.375 cm, the depth of the peak only varies by about 5%. For plasma implantation process design, a combination of PIC and TAMIX is better than the traditional practice of using PIC alone. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370974
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