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  • 1
    Electronic Resource
    Electronic Resource
    TRIC channels are essential for Ca 2+ handling in intracellular stores (2007)
    [s.l.] : Nature Publishing Group
    Nature 448 (2007), S. 78-82 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Cell signalling requires efficient Ca2+ mobilization from intracellular stores through Ca2+ release channels, as well as predicted counter-movement of ions across the sarcoplasmic/endoplasmic reticulum membrane to balance the transient negative potential generated ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature05928
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  • 2
    Electronic Resource
    Electronic Resource
    Study of Cu gettering to cavities in separation by implantation of oxygen substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 830-832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gettering of Cu impurities to cavities induced in separation by implantation of oxygen (SIMOX) substrates has been investigated. The cavities were introduced beneath the buried oxide layer (BOX) of SIMOX by H+ implantation and subsequently annealing. 5×1013/cm2 or 5×1015/cm2 of Cu impurities were implanted in the top Si layer. The results indicate that the BOX layer does not appear to prevent the movement of Cu at temperatures higher than 700 °C. Profiles of Cu indicate that 92% of the initial 5×1013/cm2 Cu has diffused through the buried oxide layer and been captured by the cavities, with 1% of Cu left in the top Si layer after a 1000 °C annealing, and 73.6% of the 5×1015/cm2 Cu is gettered to the cavities with 13% of Cu in the top Si layer. The gettering effect of cavities is stronger than the damage around the BOX. H+ implantation-induced cavities have been demonstrated to be an effective method to getter Cu impurities away from the top Si layer in SIMOX substrates. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120907
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  • 3
    Electronic Resource
    Electronic Resource
    Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 94-98 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well-defined bands of cavities have been formed beneath the buried oxide (BOX) layer of two sets of separation-by-implantation-of-oxygen (SIMOX) wafers by H+ and He+ implantation. The gettering of Cu impurities, which were implanted into the top Si layer at different doses (5×1013, 5×1014, and 5×1015/cm2), to the cavities has been studied by secondary ion mass spectroscopy and cross-sectional transmission electron microscopy. The results indicated that the cavities induced either by H+ or He+ implantation are effective gettering centers for Cu in SIMOX wafers, and up to 4×1015/cm2 Cu has diffused through the BOX layer and been captured by the cavities. The gettering efficiency of cavities increases with the decrease of Cu implantation doses and the increase of annealing temperatures. He+ ion implantation is found to be more suitable for cavity formation and impurity gettering than H+ ion implantation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369426
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  • 4
    Electronic Resource
    Electronic Resource
    Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4214-4219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcavities formed by H+ and He+ implantation and subsequent annealing are effective gettering sites for transition metal impurities in silicon. However, gettering in silicon-on-insulator (SOI) materials is quite different from that in silicon. In this work, we investigate the gettering of Cu to these microcavities in silicon, separation by implantation of oxygen (SIMOX) and bonded/ion-cut SOI wafers. Our data indicate that He+ implantation in the high dose regime (0.2–1×1017 cm−2) creates a wide band of microcavities near the projected range without causing blistering on the sample surface. On the other hand, the implantation dose of H+ needed for stable microcavity formation is relatively narrow (3–4×1016 cm−2), and this value is related to the projected range. The different behavior of H and He in silicon is discussed and He implantation is more desirable with regard to impurity gettering. Cu is implanted into the surface region of the Si and SOI samples, followed by annealing at 700 and 1000 °C. Our results indicate that the microcavities can effectively getter a high dose of Cu (2.5×1015 cm−2) at 700 °C in bulk Si wafer, but higher temperature annealing is needed for the effective gettering in SIMOX. Gettering of Cu by the intrinsic defects at or beneath the buried oxide interface of the SIMOX is observed at 700 °C, but no trapped impurities are observed after 1000 °C annealing in the samples in the presence of microcavities. Almost all of the 1×1014 cm−2 Cu implanted into the Si overlayer of the bonded/ion-cut SOI diffuse through the thermally grown oxide layer and are captured by the cavities in the substrate after annealing at 1000 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371348
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  • 5
    Electronic Resource
    Electronic Resource
    Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3780-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: H+ was implanted into single-crystal silicon with a dose of 1×1016/cm2 and an energy of 30 KeV, and then He+ was implanted into the same sample with the same dose and an energy of 33 KeV. Both of the implantations were performed at room temperature. Subsequently, the samples were annealed in a temperature range from 200 to 450 °C for 1 h. Cross-sectional transmission electron microscopy, Rutherford backscattering spectrometry/channeling, elastic recoil detection, and high resolution x-ray diffraction were employed to characterize the strain, defects, and the distribution of H and He in the samples. The results showed that co-implantation of H and He decreases the total implantation dose, with which the surface could exfoliate during annealing. During annealing, the distribution of hydrogen did not change, but helium moved deeper and its distribution became sharper. At the same time, the maximum of the strain in the samples decreased a lot and also moved deeper. Furthermore, the defects introduced by ion implantation and annealing were characterized by slow positron annihilation spectroscopy, and two positron trap peaks were found. After annealing, the maximum of these two peaks decreased at the same time and their positions moved towards the surface. No bubbles or voids but cracks and platelets were observed by cross-sectional transmission electron microscopy. Finally, the relationship between the total implantation dose and the fraction of hydrogen in total implantation dose was calculated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389478
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  • 6
    Electronic Resource
    Electronic Resource
    Intense blue-light emission from carbon-plasma-implanted porous silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 37-39 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the room-temperature photoluminescence (PL) characteristics of porous-silicon plasma implanted with carbon. Before implantation, the porous silicon made by anodizing emits intense orange light. After carbon-plasma-immersion ion implantation, the orange light disappears and blue light appears. Furthermore, intense blue light is obtained after annealing at 400 °C for 30 min. Analytical results show that the quenching of orange light and appearance of blue light are due to the reduction of the size of nanocrystallites caused by implantation. The effects of different annealing temperature on the light-emission properties of the implanted porous silicon are also studied. The intensity decreases with increased temperature from 600 to 1000 °C, but the PL intensity increases drastically again after annealing at 1250 °C due to the formation of a substance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337622
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  • 7
    Electronic Resource
    Electronic Resource
    Sol-Gel Preparation of Pb(Zr0.50Ti0.50)O3 Ferroelectric Thin Films Using Zirconium Oxynitrate as the Zirconium Source (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Lead zirconium titanate (Pb(Zr0.5Ti0.5)O3, PZT) ferroelectric thin films were successfully deposited on platinum-coated silicon substrates and platinum-coated silicon substrates with a PbTiO3 interlayer by using a modified sol–gel spin-coating process, using zirconium oxynitrate dihydrate as the zirconium source. The precursor solution for spin coating was prepared from lead acetate trihydrate, zirconium oxynitrate dihydrate, and tetrabutyl titanate. The use of zirconium oxynitrate instead of the widely used zirconium alkoxide provided more stability to the PZT precursor solution and a well-crystallized structure of PZT film at a relatively low processing temperature. PZT films that were annealed at a temperature of 700°C for 2 min via a rapid thermal annealing process formed a well-crystallized perovskite phase of PZT films and also had nanoscale uniformity. The microstructure and morphology of the prepared PZT thin films were investigated via X-ray diffractometry, transmission electron microscopy, and atomic force microscopy techniques. The values for the remnant polarization (P) and coercive electric field (E) of the PZT films that were obtained from the P–E loop measurements were 3.67 μC/cm2 and 54.5 kV/cm, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.1999.tb20087.x
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  • 8
    Electronic Resource
    Electronic Resource
    Derivative Spectrophotometric Determination of Nd, Ho and Er in Rare Earth Mixtures with 1-Ethyl-6,8-difluoro-7-(3-methyl-1-piperazinyl)-4-oxo-1,4-dihydro-3-quinoline carboxylic acid (1999)
    Springer
    Microchimica acta 132 (1999), S. 17-23 
    Details
    ISSN: 1436-5073
    Keywords: Keywords. derivative spectrophotometry; rare earth determination; 6,8-fluoroquinolones; lomefloxacin.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract.  The second derivative spectrophotometric method has been developed as a procedure for the determination of neodymium, holmium and erbium in mixed rare earths. It was found that the 1-ethyl-6, 8-difluoro-7-(3-methyl-1-piperazinyl)-4-oxo-1,4- dihydro-3-quinoline carboxylic acid forms stable complexes with neodymium, holmium and erbium ions in the pH 9.2–10.5 range. In the second derivative spectra the optimum analytical signals for neodymium, holmium and erbium are at 576.2 (+)−574.5 (−)nm, 444.2 (+) −447.8 (−)nm and 516.0 (+) −517.2(−)nm, respectively. Beer’s law is obeyed from 5.0×10−5 M to 2.5×10−4 M of neodymium, holmium and erbium. The quantification limits (10 Sb) were 1.2×10−5 M for Nd, 9.7×10−5 M for Ho and 3.0×10−6 M for Er.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00010069
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  • 9
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    Machine-Learning-Based High-Resolution Earthquake Catalog Reveals How Complex Fault Structures Were Activated during the 2016–2017 Central Italy Sequence (2021)
    SSA
    Details
    Publication Date: 2021-12-17
    Description: The 2016–2017 central Italy seismic sequence occurred on an 80 km long normal‐fault system. The sequence initiated with the Mw 6.0 Amatrice event on 24 August 2016, followed by the Mw 5.9 Visso event on 26 October and the Mw 6.5 Norcia event on 30 October. We analyze continuous data from a dense network of 139 seismic stations to build a high‐precision catalog of ∼900,000 earthquakes spanning a 1 yr period, based on arrival times derived using a deep‐neural‐network‐based picker. Our catalog contains an order of magnitude more events than the catalog routinely produced by the local earthquake monitoring agency. Aftershock activity reveals the geometry of complex fault structures activated during the earthquake sequence and provides additional insights into the potential factors controlling the development of the largest events. Activated fault structures in the northern and southern regions appear complementary to faults activated during the 1997 Colfiorito and 2009 L’Aquila sequences, suggesting that earthquake triggering primarily occurs on critically stressed faults. Delineated major fault zones are relatively thick compared to estimated earthquake location uncertainties, and a large number of kilometer‐long faults and diffuse seismicity were activated during the sequence. These properties might be related to fault age, roughness, and the complexity of inherited structures. The rich details resolvable in this catalog will facilitate continued investigation of this energetic and well‐recorded earthquake sequence.
    Description: Published
    Description: 11–19
    Description: 5T. Sismologia, geofisica e geologia per l'ingegneria sismica
    Description: N/A or not JCR
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 10
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    Assessment of the manganese cluster’s oxidation state via photoactivation of photosystem II microcrystals (2019)
    National Academy of Sciences
    Details
    Publication Date: 2019-12-17
    Description: Knowledge of the manganese oxidation states of the oxygen-evolving Mn4CaO5cluster in photosystem II (PSII) is crucial toward understanding the mechanism of biological water oxidation. There is a 4 decade long debate on this topic that historically originates from the observation of a multiline electron paramagnetic resonance (EPR) signal with effective total spin of S = 1/2 in the singly oxidized S2state of this cluster. This signal implies an overall oxidation state of either Mn(III)3Mn(IV) or Mn(III)Mn(IV)3for the S2state. These 2 competing assignments are commonly known as “low oxidation (LO)” and “high oxidation (HO)” models of the Mn4CaO5cluster. Recent advanced EPR and Mn K-edge X-ray spectroscopy studies converge upon the HO model. However, doubts about these assignments have been voiced, fueled especially by studies counting the number of flash-driven electron removals required for the assembly of an active Mn4CaO5cluster starting from Mn(II) and Mn-free PSII. This process, known as photoactivation, appeared to support the LO model since the first oxygen is reported to evolve already after 7 flashes. In this study, we improved the quantum yield and sensitivity of the photoactivation experiment by employing PSII microcrystals that retained all protein subunits after complete manganese removal and by oxygen detection via a custom built thin-layer cell connected to a membrane inlet mass spectrometer. We demonstrate that 9 flashes by a nanosecond laser are required for the production of the first oxygen, which proves that the HO model provides the correct description of the Mn4CaO5cluster’s oxidation states.
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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